A simple method and application of directly growing carbon nanotube arrays on metal

A carbon nanotube array, a direct technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of carbon nanotube carrier gas danger, difficult growth, high solvent toxicity, etc., to improve condensation heat transfer Efficiency, improved safety and reliability, strong binding effect

Active Publication Date: 2019-08-06
NORTHEAST GASOLINEEUM UNIV
View PDF12 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The purpose of the present invention is to solve the low structural strength of existing carbon nanotubes and silicon substrates, it is difficult to grow carbon nanotubes on metal substrates and the risk of carrier gas used to grow carbon nanotubes on the alloy surface, the solvent is highly toxic, and is not suitable for industrialization To solve the problem of generalization, and to provide a simple method and application of directly growing carbon nanotube arrays on metal

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A simple method and application of directly growing carbon nanotube arrays on metal
  • A simple method and application of directly growing carbon nanotube arrays on metal
  • A simple method and application of directly growing carbon nanotube arrays on metal

Examples

Experimental program
Comparison scheme
Effect test

specific Embodiment approach 1

[0030] Specific Embodiment 1: This embodiment is a simple method for directly growing carbon nanotube arrays on metal, which is specifically completed according to the following steps:

[0031] 1. Etching treatment:

[0032] First, immerse the metal substrate in acid and etch for 3min-5min, then take out the metal substrate, use organic solvent as the cleaning agent, and ultrasonically clean it for 5min-10min at an ultrasonic power of 80W-100W, and then use deionized water as the cleaning agent. Ultrasonic cleaning at an ultrasonic power of 80W to 100W for 5min to 10min, and then drying with nitrogen to obtain an etched metal substrate; place the etched metal substrate in a quartz boat, and then put the quartz boat into a tube furnace the reaction zone;

[0033] 2. Add 1000mL min to the tube furnace -1 ~1500mL·min -1 The gas flow rate of the nitrogen gas is passed through for 10min to 20min, and then the flow rate of the nitrogen gas is adjusted to 100mL·min -1 ~500mL·min ...

specific Embodiment approach 2

[0046] Specific embodiment two: the difference between this embodiment and specific embodiment one is: the acid described in the step one is that the mass fraction is 35%~37% hydrochloric acid, the mass fraction is 65%~70% nitric acid and the mass fraction is One of 50% to 60% sulfuric acid or a mixture of several of them. Other steps are the same as in the first embodiment.

specific Embodiment approach 3

[0047] Embodiment 3: This embodiment differs from Embodiment 1 or Embodiment 2 in that: the metal substrate described in step 1 is stainless steel. Other steps are the same as those in Embodiment 1 or 2.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
heightaaaaaaaaaa
heightaaaaaaaaaa
Login to view more

Abstract

A simple method and application for directly growing carbon nanotube arrays on metals, which relates to a method and application for modifying metal surfaces. The purpose of the present invention is to solve the low structural strength of existing carbon nanotubes and silicon substrates, it is difficult to grow carbon nanotubes on metal substrates and the risk of carrier gas used to grow carbon nanotubes on the alloy surface, the solvent is highly toxic, and is not suitable for industrialization problem of promotion. Method: 1. Etching treatment; 2. Introduce nitrogen gas and start the tube furnace; 3. Inject the mixture of ferrocene and cyclohexane and react for 30min to 120min; 4. Close the tube furnace and let it naturally Cool to room temperature to obtain a metal substrate with carbon nanotube arrays grown on the surface. The shear bonding strength of the carbon nanotube array prepared by the invention and the metal base reaches 0.95 MPa. The invention can obtain a simple method for directly growing the carbon nanotube array on the metal.

Description

technical field [0001] The invention relates to a method and application of metal surface modification. Background technique [0002] In recent years, the wide application value of superhydrophobic surfaces in self-cleaning, metal protection, microfluidic control, anti-frosting and other fields has attracted the attention of many researchers. Generally, superhydrophobic surfaces are generated by the combination of certain roughness and low surface free energy. These low surface energy materials are generally organic compounds containing silicon or fluorine, which will seriously deteriorate the thermal and electrical conductivity of the surface. Since Iijima discovered carbon nanotubes in 1991, they have attracted much attention due to their unique structure, excellent performance and broad application prospects. Among them, carbon nanotubes have been applied to the field of superhydrophobic coatings due to their special thermal and hydrophobic properties. Molecular dynami...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/60C30B29/02C30B25/18C30B25/02
CPCC30B25/02C30B25/186C30B29/02C30B29/602
Inventor 王忠华赵海谦高杏存武传燕刘立君刘晓燕
Owner NORTHEAST GASOLINEEUM UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products