Doped perovskite solar cell and method for preparing same

A solar cell and perovskite technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of low battery efficiency and hindering charge transmission, and achieve the effects of suitable industrial production, improved photoelectric performance, and easy preparation

Active Publication Date: 2017-12-01
VALIANT CO LTD
View PDF7 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But MoS 2 As a single layer in the device, it hinders the transport of charg

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Doped perovskite solar cell and method for preparing same
  • Doped perovskite solar cell and method for preparing same
  • Doped perovskite solar cell and method for preparing same

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0038] Example one

[0039] Take CH 3 NH 3 PbI 3 Perovskite absorption layer, PC 61 BM is the electron transport layer, BCP is the buffer layer, and Ag is the metal electrode. The specific preparation steps are as follows:

[0040] A. Cleaning of FTO conductive glass: Use glass cleaner, deionized water, high purity water, absolute ethanol, and acetone to ultrasonic FTO conductive glass for 15-20 minutes, and then dry it with nitrogen for use;

[0041] B, NiO x Preparation of hole transport layer: Using nickel acetylacetonate and magnesium acetate as raw materials, prepare the first precursor solution of nickel acetylacetonate containing magnesium acetate, where the molar concentration of nickel acetylacetonate is 0.01-0.05 mol / L, and the doped atoms The ratio is: Mg:Ni=(1-2):10, and acetonitrile is the solvent; put the cleaned FTO glass with the conductive surface facing up, place it on a hot plate at a temperature of 500-600℃, and spray the above by ultrasonic spraying. Precursor f...

Example Embodiment

[0050] Example two

[0051] Reference Example 1: Cleaning FTO glass and preparing NiO x Hole transport layer. This embodiment uses CH 3 NH 3 PbI 2.4 Cl 0.6 It is a perovskite absorption layer. Will CH 3 NH 3 I, PbI 2 And PbCl 2 Add it to the DMF solution at a molar ratio of 1:0.7:0.3 to prepare a second precursor solution with a molar concentration of 0.5-1.5 mol / L, and then add it to the above solution at a ratio of 0.02-0.04 mg / mL MoS 2 Powder, MoS 2 The amount of powder added: 0.02-0.04mg per ml of the second precursor solution will be added, and then stirred and dissolved at 75-80℃ for 2-3h to form CH 3 NH 3 PbI 2.4 Cl 0.6 Perovskite precursor fluid. The above-mentioned perovskite precursor solution was coated on NiO by slit coating x On the hole transport layer, then annealed at 80-100℃ for 10-30min to form a 400-500nm perovskite absorption layer; then coat the PC by slit coating 71 BM in chlorobenzene solution (20mg / mL), annealing at 100℃ for 10min to form 50-80nm thick PC...

Example Embodiment

[0056] Example three

[0057] Reference Example 1: Cleaning FTO glass and preparing NiO x Hole transport layer. This embodiment uses CH 3 NH 3 PbI 2.4 Br 0.6 It is a perovskite absorption layer. Will CH 3 NH 3 I, PbI 2 And PbBr 2 Add it to the DMF solution at a molar ratio of 1:0.7:0.3 to prepare a second precursor solution with a molar concentration of 0.5-1.5 mol / L, and then add it to the above solution at a ratio of 0.02-0.04 mg / mL MoS 2 Powder (same as above), then stir and dissolve at 75-80℃ for 2-3h to form CH 3 NH 3 PbI 2.4 Br 0.6 Perovskite precursor fluid. The above-mentioned perovskite precursor liquid was coated on NiO by screen printing x On the hole transport layer, then annealed at 80-100℃ for 10-30min to form a 400-500nm perovskite absorption layer; then bis-PC is coated by screen printing 61 BM in chlorobenzene solution (20mg / mL), annealing at 100℃ for 10min to form bis-PC with a thickness of 50-80nm 61 BM electron transport layer; transfer the above glass substr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Film thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention belongs to the field of photovoltaic materials, and in particular to a doped perovskite solar cell and a method for preparing the same. The doped perovskite solar cell successively includes a FTO conductive glass substrate, a NiOx cavity transmission layer, a perovskite absorption layer, an electronic transmission layer, a buffering layer and a metal electrode layer which are successively laminated from bottom to top. The perovskite absorption layer is doped with MoS2 which has strong hydrophobic property and high charge transmission property, which can effectively increase the photoelectric property and stability of the solar cell. The doped perovskite solar cell has the characteristics of simple components, easy preparation, excellent repeatability, no hysteresis effects, and suitability for industrial production.

Description

technical field [0001] The field of photovoltaic materials of the present invention specifically relates to a doped perovskite solar cell and a preparation method thereof. Background technique [0002] In recent years, organic-inorganic hybrid perovskite solar cells have developed rapidly. In just seven years, its efficiency has increased from 3.8% in 2009 to 22.1% in 2016. This development speed far exceeds that of amorphous silicon solar cells, organic thin film solar cells and dye-sensitized solar cells. The most popular technology branch in the industrialized new generation of photovoltaic technology has received extensive attention from academia and industry. [0003] Although the efficiency of perovskite solar cells is high, the stability problem needs to be solved urgently (Nature Energy, 2016, 1, 15015). Because the perovskite light-absorbing layer used in this type of battery is unstable in the air, it is easily decomposed when exposed to water, resulting in a sha...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L51/42H01L51/46H01L51/48
CPCH10K30/10H10K2102/00Y02E10/549Y02P70/50
Inventor 任辉彩庞茂印曹原胡臻玉王永磊罗伟田绍振陈帅胡葆华
Owner VALIANT CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products