Doped perovskite solar cell and method for preparing same
A solar cell and perovskite technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of low battery efficiency and hindering charge transmission, and achieve the effects of suitable industrial production, improved photoelectric performance, and easy preparation
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[0038] Example one
[0039] Take CH 3 NH 3 PbI 3 Perovskite absorption layer, PC 61 BM is the electron transport layer, BCP is the buffer layer, and Ag is the metal electrode. The specific preparation steps are as follows:
[0040] A. Cleaning of FTO conductive glass: Use glass cleaner, deionized water, high purity water, absolute ethanol, and acetone to ultrasonic FTO conductive glass for 15-20 minutes, and then dry it with nitrogen for use;
[0041] B, NiO x Preparation of hole transport layer: Using nickel acetylacetonate and magnesium acetate as raw materials, prepare the first precursor solution of nickel acetylacetonate containing magnesium acetate, where the molar concentration of nickel acetylacetonate is 0.01-0.05 mol / L, and the doped atoms The ratio is: Mg:Ni=(1-2):10, and acetonitrile is the solvent; put the cleaned FTO glass with the conductive surface facing up, place it on a hot plate at a temperature of 500-600℃, and spray the above by ultrasonic spraying. Precursor f...
Example Embodiment
[0050] Example two
[0051] Reference Example 1: Cleaning FTO glass and preparing NiO x Hole transport layer. This embodiment uses CH 3 NH 3 PbI 2.4 Cl 0.6 It is a perovskite absorption layer. Will CH 3 NH 3 I, PbI 2 And PbCl 2 Add it to the DMF solution at a molar ratio of 1:0.7:0.3 to prepare a second precursor solution with a molar concentration of 0.5-1.5 mol / L, and then add it to the above solution at a ratio of 0.02-0.04 mg / mL MoS 2 Powder, MoS 2 The amount of powder added: 0.02-0.04mg per ml of the second precursor solution will be added, and then stirred and dissolved at 75-80℃ for 2-3h to form CH 3 NH 3 PbI 2.4 Cl 0.6 Perovskite precursor fluid. The above-mentioned perovskite precursor solution was coated on NiO by slit coating x On the hole transport layer, then annealed at 80-100℃ for 10-30min to form a 400-500nm perovskite absorption layer; then coat the PC by slit coating 71 BM in chlorobenzene solution (20mg / mL), annealing at 100℃ for 10min to form 50-80nm thick PC...
Example Embodiment
[0056] Example three
[0057] Reference Example 1: Cleaning FTO glass and preparing NiO x Hole transport layer. This embodiment uses CH 3 NH 3 PbI 2.4 Br 0.6 It is a perovskite absorption layer. Will CH 3 NH 3 I, PbI 2 And PbBr 2 Add it to the DMF solution at a molar ratio of 1:0.7:0.3 to prepare a second precursor solution with a molar concentration of 0.5-1.5 mol / L, and then add it to the above solution at a ratio of 0.02-0.04 mg / mL MoS 2 Powder (same as above), then stir and dissolve at 75-80℃ for 2-3h to form CH 3 NH 3 PbI 2.4 Br 0.6 Perovskite precursor fluid. The above-mentioned perovskite precursor liquid was coated on NiO by screen printing x On the hole transport layer, then annealed at 80-100℃ for 10-30min to form a 400-500nm perovskite absorption layer; then bis-PC is coated by screen printing 61 BM in chlorobenzene solution (20mg / mL), annealing at 100℃ for 10min to form bis-PC with a thickness of 50-80nm 61 BM electron transport layer; transfer the above glass substr...
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