Electrode material of zinc antimonide thermoelectric material and preparation method of electrode material
A technology of electrode materials and thermoelectric materials, which is applied in the manufacture/processing of thermoelectric devices, materials for junction leads of thermoelectric devices, etc., and can solve the problems of zinc antimonide and other problems
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Examples
Embodiment 1
[0007] In the experiment, the magnetron sputtering method was used to deposit metal cobalt electrodes on the p-type zinc antimonide thin film with metal cobalt as the target material. Concrete preparation process is as follows:
[0008] Step 1: Zinc antimonide is washed with acetone, alcohol, and deionized water, dried and introduced into the growth chamber;
[0009] Step 2: Cobalt metal is used as the target material, and a 100 μm thick stainless steel plate with electrode patterns is used as a mask, and cobalt metal electrodes are deposited on the zinc antimonide film cleaned in step 1 by magnetron sputtering, and the working gas is argon Gas, the working pressure is 0.4Pa, the radio frequency power is 50W, the pre-sputtering time is 3min and the deposition time is 10min, and the thickness of the prepared metal cobalt electrode is 100nm after testing;
[0010] Step 3, the sample is annealed under the protection of argon, the air pressure is 420Pa, the annealing temperature ...
Embodiment 2
[0012] The experiment adopts the magnetron sputtering method, using metal cobalt as the target material, depositing metal cobalt electrodes on the p-type zinc antimonide thin film, adding surface roughening process before electrode preparation. Concrete preparation process is as follows:
[0013] Step 1, zinc antimonide is washed with acetone, alcohol and deionized water;
[0014] Step 2, soaking the zinc antimonide sample cleaned in step 1 in 0.1% dilute hydrochloric acid solution for 5 seconds, washing and drying with deionized water, and then introducing it into the growth chamber;
[0015] Step 3: Cobalt metal is used as a target material, and a 100 μm thick stainless steel plate with an electrode pattern is used as a mask, and a metal cobalt electrode is deposited on the zinc antimonide film cleaned in step 2 by magnetron sputtering, and the working gas is argon Gas, the working pressure is 0.4Pa, the radio frequency power is 50W, the pre-sputtering time is 3min and the ...
PUM
| Property | Measurement | Unit |
|---|---|---|
| Thickness | aaaaa | aaaaa |
| Thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More