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Vacuum reaction cavity for preparation of BiGaO3 thin film

A technology of reaction chamber and vacuum, applied in the field of vacuum reaction chamber, can solve the problems of difficult integration and compatibility of semiconductor manufacturing process, and achieve the effect of accurate and controllable growth thickness and simple process

Active Publication Date: 2017-12-15
南通大学技术转移中心有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the chemical solution spin-coating method is really powerless in preparing a large area with high thickness uniformity and precise controllability at the nanometer level, and it is difficult to integrate and be compatible with the semiconductor manufacturing process.

Method used

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  • Vacuum reaction cavity for preparation of BiGaO3 thin film
  • Vacuum reaction cavity for preparation of BiGaO3 thin film
  • Vacuum reaction cavity for preparation of BiGaO3 thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0061] The used vacuum reaction chamber includes 32 separate spaces, which are respectively used to pass through tris(2,2,6,6-tetramethyl-3,5-heptanedionate) bismuth (III) steam, tri-tertiary Butylgallium vapor, H 2 O steam, N with a purity above 99.9995% 2 (Nitrogen); B, G, O, and N respectively represent bismuth precursor gas, gallium precursor gas, oxygen precursor gas, and high-purity nitrogen gas, and the arrangement order of these separated spaces is as follows figure 2 shown.

[0062] Tris(2,2,6,6-tetramethyl-3,5-heptanedionate)bismuth(III) vapor was generated from a solid source vial, starting from tris(2,2,6,6-tetramethyl- Bismuth (III) 3,5-heptanedionate is heated at 170-195°C to produce bismuth (III) tris(2,2,6,6-tetramethyl-3,5-heptanedionate) steam;

[0063] h 2 O vapor is produced by a liquid source bottle, and this raw material is at room temperature and is properly cooled by a semiconductor refrigeration chip to avoid excessive vapor pressure;

[0064] Tri...

Embodiment 2

[0081] The used vacuum reaction chamber includes 32 separate spaces, which are used to feed trimethylbismuth vapor, trimethylgallium vapor, H 2 O steam, N with a purity above 99.9995% 2 (Nitrogen); B, G, O, and N respectively represent bismuth precursor gas, gallium precursor gas, oxygen precursor gas, and high-purity nitrogen gas, and the arrangement order of these separated spaces is as follows image 3 shown.

[0082] Trimethylbismuth vapor is generated by a liquid source bottle, and trimethylbismuth is diluted and dissolved with an organic solvent to generate trimethylbismuth vapor;

[0083] Trimethylgallium vapor is generated from a liquid source bottle, and trimethylgallium is diluted and dissolved with an organic solvent to generate trimethylgallium vapor;

[0084] h 2 O vapor is produced by a liquid source bottle, and this raw material is at room temperature and is properly cooled by a semiconductor refrigeration chip to avoid excessive vapor pressure;

[0085] Dur...

Embodiment 3

[0100] The used vacuum reaction chamber includes 32 separate spaces, which are used to feed triphenylbismuth vapor, triethylgallium vapor, H 2 O steam, N with a purity above 99.9995% 2 (Nitrogen); B, G, O, and N respectively represent bismuth precursor gas, gallium precursor gas, oxygen precursor gas, and high-purity nitrogen gas, and the arrangement order of these separated spaces is as follows Figure 4 shown.

[0101] Triphenylbismuth vapor is produced by a liquid source bottle, and triphenylbismuth is diluted and dissolved with an organic solvent to generate triphenylbismuth vapor;

[0102] Triethylgallium vapor is generated from a liquid source bottle, and triethylgallium is diluted and dissolved with an organic solvent to generate triethylgallium vapor;

[0103] h 2 O vapor is produced by a liquid source bottle, and this raw material is at room temperature and is properly cooled by a semiconductor refrigeration chip to avoid excessive vapor pressure;

[0104] During ...

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Abstract

Disclosed is a vacuum reaction cavity for preparation of a BiGaO3 thin film. The vacuum reaction cavity for preparation of the BiGaO3 thin film comprises a plurality of separated spaces, wherein the separated spaces are used for allowing bismuth precursor gases, gallium precursor gases, oxygen precursor gases and inert gases to be fed into. A BiGaO3 thin film material is obtained through a precursor self-constraint surface adsorption reaction, and the chemical adsorption reaction is conducted in the vacuum reaction cavity. By the adoption of a method for preparation of the BiGaO3 thin film material, the precision and the controllability of the BiGaO3 thin film growth thickness can be achieved, and the surface flatness of the BiGaO3 thin film is greatly better than that of a thin film in the prior art. Due to the facts that feeding of various gases is continuous, and the flow velocity is constant, the thickness of the thin film only depends on the rotation frequency of a substrate, and the technology can be quite simple and reliable.

Description

technical field [0001] The invention relates to a method for preparing BiGaO 3 Thin film vacuum reaction chamber. Background technique [0002] This application is a divisional application with application number CN201510766399.9. [0003] Recently, bismuth-based ferroelectric materials such as bismuth ferrite (BiFeO 3 ), bismuth titanate (Bi 4 Ti 3 o 12 ), bismuth aluminate (BiAlO 3 ) and other ferroelectric oxides with perovskite or pseudoperovskite structures have attracted much attention due to their low leakage, strong fatigue resistance, high dielectric constant, and environmental friendliness. In recent years, bismuth ferrite (BiFeO 3 ) and bismuth titanate (Bi 4 Ti 3 o 12 ) design, preparation, physical and chemical properties and application in production and life have been generally recognized and understood. In 2005, Baettig et al. predicted bismuth gallate (BiGaO 3 ) also have excellent ferroelectric properties, but currently people are working on bism...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/40C23C16/52
CPCC23C16/40C23C16/52
Inventor 王志亮尹海宏宋长青
Owner 南通大学技术转移中心有限公司