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A LED epitaxial growth method for improving luminous efficiency

A technology of epitaxial growth and luminous efficiency, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of luminous efficiency attenuation, etc., and achieve the effects of improving luminous efficiency, eliminating stress, and improving the level of hole injection

Active Publication Date: 2019-05-10
XIANGNENG HUALEI OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of this, the technical problem to be solved in this application is to provide a LED epitaxial growth method that improves luminous efficiency, and solve the problem of luminous efficiency attenuation (efficiency droop) under large current injection in the existing LED epitaxial growth.

Method used

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  • A LED epitaxial growth method for improving luminous efficiency
  • A LED epitaxial growth method for improving luminous efficiency
  • A LED epitaxial growth method for improving luminous efficiency

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] The LED epitaxial growth method for enhancing luminous radiation efficiency described in this embodiment includes the following steps:

[0049] Step 101, processing the sapphire substrate.

[0050] Step 102 , growing a low-temperature buffer layer GaN.

[0051] Step 103 , growing an undoped GaN layer.

[0052] Step 104 , growing a Si-doped N-type GaN layer.

[0053] Step 105, growing an InAlN:Mg thin barrier layer, further:

[0054] Keep the reaction chamber pressure at 400mbar-600mbar, keep the temperature at 800°C-900°C, and feed NH with a flow rate of 30000sccm-60000sccm 3 , TMAl of 100sccm-200sccm, N of 80L / min-110L / min 2 , 800sccm-1000sccm TMIn and 1200sccm-1500sccm CP 2 Mg, grow a Mg-doped InAlN layer with a thickness of 5nm-12nm to form an InAlN:Mg thin barrier layer, where the Mg doping concentration is 5E17atoms / cm 3 -8E17 atoms / cm 3 .(1E17 represents 10 to the 17th power, which is 10 17 , 5E17 represents 5×10 17 , atoms / cm 3 is the concentration unit...

Embodiment 2

[0065] This embodiment specifically describes the specific content of growing the LED epitaxial layer as a whole. The LED epitaxial growth method for improving luminous efficiency described in this embodiment includes the following steps:

[0066] Step 201, processing the sapphire substrate: into the reaction chamber of the metal-organic chemical vapor deposition system with the substrate placed, H at 1000°C-1100°C 2 Under the atmosphere, feed 100L / min-130L / min of H 2 , keep the reaction chamber pressure at 100mbar-300mbar, and process the sapphire substrate for 5min-10min.

[0067] Step 202, growing low-temperature buffer layer GaN: lower the temperature to 500°C-600°C, keep the reaction chamber pressure at 300mbar-600mbar, and feed NH with a flow rate of 10000sccm-20000sccm 3 , 50sccm-100sccm TMGa and 100L / min-130L / min H 2 , grow a low-temperature buffer layer GaN with a thickness of 20nm-40nm on a sapphire substrate.

[0068] Raise the temperature to 1000°C-1100°C, keep th...

Embodiment 3

[0082] A conventional LED epitaxial growth method is provided below as a comparative example of the present invention.

[0083] A conventional LED epitaxial growth method includes the following steps:

[0084] Step 301, processing the sapphire substrate: Into the reaction chamber of the metal-organic chemical vapor deposition system with the substrate placed, H at 1000°C-1100°C 2 Under the atmosphere, feed 100L / min-130L / min of H 2 , keep the reaction chamber pressure at 100mbar-300mbar, and process the sapphire substrate for 5min-10min.

[0085] Step 302, grow low-temperature buffer layer GaN: lower the temperature to 500°C-600°C, keep the reaction chamber pressure at 300mbar-600mbar, and feed NH with a flow rate of 10000sccm-20000sccm 3 , 50sccm-100sccm TMGa and 100L / min-130L / min H 2 , grow a low-temperature buffer layer GaN with a thickness of 20nm-40nm on a sapphire substrate.

[0086] Raise the temperature to 1000°C-1100°C, keep the reaction chamber pressure at 300mbar...

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Abstract

The invention discloses an epitaxial growth method of an LED capable of improving the luminous efficiency. The method sequentially comprises the steps of treating a substrate; growing a low-temperature buffer layer GaN; growing an undoped GaN layer; growing a Si-doped N-type GaN layer; growing an InAlN:Mg thin barrier layer; alternately growing an InxGa(1-x)N / GaN luminous layer; growing an AlGaN:Mg thin barrier layer and an InGaAlN superlattice electron blocking layer; growing a P-type AlGaN layer; growing a Mg-doped P-type GaN layer; and cooling. Through the epitaxial growth method of the LED, the problem of a luminous efficiency droop (efficiency droop) under heavy current injection in existing epitaxial growth of the LED is solved.

Description

technical field [0001] The present application relates to the technical field of LED epitaxial growth, in particular, to an LED epitaxial growth method for improving luminous efficiency. Background technique [0002] As a lighting source, LED has the advantages of low energy consumption, long life, small size, high luminous efficiency, no pollution and rich colors compared with existing conventional lighting sources. At present, the scale of domestic production of LEDs is gradually expanding, and the market demand for LEDs and LED light effects are increasing day by day. [0003] At present, LEDs have a "droop phenomenon" in which the higher the current density is, the lower the luminous efficiency of the LED chip is, so the energy loss will increase, which will affect the energy-saving effect of the LED. Suppressing this attenuation phenomenon and improving the luminous efficiency of LEDs have become the most concerned issues in the industry. [0004] Therefore, in view o...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/12H01L33/14
Inventor 徐平
Owner XIANGNENG HUALEI OPTOELECTRONICS
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