38results about How to "Increase the number of photons" patented technology

The invention is directed to fluorophore-containing compositions and configurations wherein proximity between the fluorophore and one or more protective agents (PAs) modifies the lifetime of fluorescent and / or dark states, their frequency of occurrence, and the total lifetime of fluorescence in order to appropriately modify the photophysical characteristics of the fluorophore. The invention is also directed to methods that utilize these compositions and configurations.

An organic electroluminescence device comprises a light transmissive substrate, a light scattering region which is disposed on the light transmissive substrate, and a light emissive layer having a luminescent point. The luminescent point is spaced from the light reflective electrode by a distance of d which satisfies the following equation:nd=a×λ4⁢(2+ϕπ)whereinϕ=tan-1⁢{2⁢(n1⁢k2-n2⁢k1)n12-n22+k12-k22}.λ is a wavelength of a specific light emitted from said light emissive layer.n is a refractive index of a layer disposed between the luminescent point of the light emissive layer and the light reflective electrode, with respect to the wavelength of λ.n1 and k1 are respectively a refractive index and an attenuation coefficient of the layer disposed between the luminescent point of the light emissive layer and the light reflective electrode, and is in contact with said light reflective electrode, with respect to the wavelength of λ.n2 and k2 are respectively a refractive index and an attenuation coefficient of the light reflective electrode, with respect to the wavelength of λ.a is a value that satisfies a relation of “1.28<a≦−5.56×norg / nEML+7.74”norg is a refractive index of the layer disposed which is located between the luminescent point of the light emissive layer and the light reflective electrode and which is in contact with the light emissive layer, with respect to the wavelength of λ.nEML is a refractive index of the light emissive layer with respect to the wavelength of λ.

A radiation detector for neutrons and gamma-rays includes a conversion screen comprising a mixture of a neutron absorbing material, e.g., containing 6Li, and a phosphorescent material, e.g., ZnS(Ag) and a wavelength-shifting light-guide arranged to receive photons emitted from the phosphorescent material and generate wavelength-shifted photons therefrom. The wavelength-shifting light-guide is doped so as to form a gamma-ray scintillator material operable to generate scintillation photons in response to a gamma-ray detection event therein. A photodetector is optically coupled to the wavelength-shifting light-guide and arranged to detect the wavelength-shifted photons and the scintillation photons. Signals from the photodetector are processed to distinguish neutron detection events from gamma-ray detection events.

The invention provides a self-supporting film provided with a microstructure surface and preparation method thereof in the technical field of fluorescence quantum solutions. Firstly, a fluorescence quantum solution and a PVA solution are respectively prepared, then the fluorescence quantum solution is added to the PVA solution for even mixing, and a fluorescence quantum / PVA mixed solution is obtained; then, the fluorescence quantum / PVA mixed solution is added to a mold provided with a microstructure at the bottom, finally heat curing is performed to prepare the self-supporting film provided with the microstructure surface. By arranging the microstructure on the surface of the fluorescent quantum dot self-supporting film, the solid-state fluorescence quantum yield and the corresponding light conversion efficiency are improved. The self-supporting film can be widely applied in lots of fields of photoelectric devices, biological science and the like.

The electroluminescence element comprises the light-reflective-electrode separated from the luminous point by distance “d” satisfying the following formula.nd=a×λ4⁢{2⁢m+ϕπ}⁢⁢wherein⁢⁢ϕ=tan-1⁢{2⁢(n1⁢k2-n2⁢k1)n12-n22+k12-k22}λ is a wavelength of the light from the light emission layer. N is a refractive index of a certain layer between the luminous point and the light-reflective-electrode at λ. n1 and k1 is a refractive index and the extinction coefficient of the certain layer at λ. n2 and k2 is a refractive index and the extinction coefficient of the light-reflective-electrode at λ. m is 0 or 1. When “m” is 0, “a” satisfies the following formula.−1.17×norg / nEML+1.94≦a≦−0.16×norg / nEML+2.33When “m” is 1, “a” satisfies the following formula.0.28×norg / nEML+0.75≦a≦2.85×norg / nEML−1.23norg is a refractive index of a predetermined layer in contact with the light emission layer to be located on the same side as the light-reflective-electrode at λ. nEML is a refractive index of the light emission layer at λ.

The invention relates to a full-color organic light emitting diode (OLED) display which comprises a color conversion substrate, an OLED luminous device and a driving unit for driving the OLED luminous device to illuminate, and is characterized in that a green color conversion film layer covers a green light filter film layer; the OLED luminous device is arranged on a red light filter film layer, the green light filter film layer, a blue light filter film layer, a black matrix grid film layer and color conversion film layers; under the condition of power on, the OLED luminous device can produce electroluminescence; and a luminous spectrum of electroluminescence comprises at least two different types of blue luminous components with CIE color coordinate Y values less than 0.55 and at least one red luminous component with a CIE color coordinate X value more than 0.64. The full-color OLED display has the advantages of high precision, high yield, large size and the like and is favorable for improving the total manufacturing cost performance.