37results about How to "Increase the number of photons" patented technology

The invention provides a non-invasive skin treatment device (100) comprising: a light source (10) constructed and configured for generating linearly polarized probe light (12) and linearly polarized treatment light (22), a polarization modulator (30) constructed and configured for controlling a polarization direction of the probe light and a polarization direction of the treatment light, a polarization sensitive sensor (40) constructed and configured for sensing a level of depolarization of the probe light by sensing an intensity of back-scattered probe light (42) from the target position (210) in a predefined polarization direction of the polarization sensitive sensor, and a controller (60) being configured for scanning the polarization direction of the probe light over a predefined range while receiving the measurement signal (Sm) and for selecting an optimum polarization (P1) direction for which the depolarization of the probe light is at a minimum. The invention further provides a computer program product for controlling the skin treatment device.

The invention relates to a large-size full-color OLED (Organic Light-Emitting Diode) display, which comprises a complete color converting base plate and a display module. The large-size full-color OLED display is characterized in that a green color converting film is covered on a green filter plate film; the display module is formed by assembling a plurality of display units; each display unit comprises a transparent base plate, a plurality of OLED luminescent devices and a control loop for driving the OLED luminescent devices to radiate light; the transparent base plates are seamlessly adhered onto a red filter plate film, a green filter plate film, a blue filter plate film, a black matrix grid film and a green color converting film on the color converting base plate through colloidal packing material; and each OLED luminescent device in the display unit has a filter plate film on the color converting base plate corresponding to the OLED luminescent device independently. The large-size full-color OLED display has the advantages of being good in visual effect, high in yield and the like, is capable of being convenient to realize size dimension, and is beneficial for improving the performance price ratio for manufacturing the display.

The invention discloses a silicon solar cell and a manufacturing method of the silicon solar cell. The manufacturing method of the silicon solar cell includes the following steps of firstly providing a metallurgical grade silicon wafer substrate and cleaning the metallurgical grade silicon wafer substrate, secondly etching the metallurgical grade silicon wafer substrate and conducting purification on the metallurgical grade silicon wafer substrate, thirdly conducting morphology modification on the surface of a silicon nanometer array, fourthly conducting morphology modification on the surface of the silicon nanometer array again, and fifthly coating the silicon nanometer array with conjugated organic matter. According to the manufacturing method of the silicon solar cell, the metallurgical grade silicon materials are applied to preparation of the solar cell, surface morphology treatment and surface purification treatment are conducted on the metallurgical grade silicon materials by fully applying the wet metal auxiliary chemical etching technology, and a silicon nanometer structure is formed. Passivating treatment is conducted on organic materials and the silicon nanometer structure, electrical performance and optical performance of a metallurgical grade silicon cell are improved, and charge separation performance and charge transmission performance are improved. Stability of the cell is improved through modification to organic-inorganic hybrid heterojunction, and the charge transmission capacity of the solar cell is enhanced.

The invention discloses a novel scintillation detector with high photon transmission efficiency. The novel scintillation detector has the principle that when rays enters a crystal, secondary electronsare generated near the surface of the incidence end of the crystal (3), and fluorescence is generated; a part of fluorescence photons can be absorbed and consumed by the crystal and can escape to a position outside the crystal. The light path is reduced in a lateral window opening emitting mode; the photon collection is more facilitated. The escaped photon returns into the crystal (3) through thereflection by a reflecting layer; the generated photons pass through an antireflection film (5), a coupling agent (11), an optical glass convex lens (13) and a light guide cavity (12) to enter an optical cathode (9) of an electronics system (22) for generating photoelectrons; the photoelectrons are amplified and shaped by the subsequent electronic element to from a pulse signal; the event is finally recorded as a radiation event.

The invention relates to a full-color OLED (Organic Light Emitting Diode) display made by adopting a multi-component OLED luminescent device technology and filtering technology. The full-color OLED display comprises an optical filter substrate, an OLED luminescent device and a drive unit used for driving the OLED luminescent device to emit light, wherein each optical filter membrane layer in the optical filter substrate is provided with an OLED luminescent device corresponding to the optical filter membrane layer, and all OLED luminescent devices are the same in structures. The full-color OLED display is characterized in that electroluminescent luminescent spectrums generated by the OLED luminescent devices under the electrifying condition comprise at least two groups of groups of blue light luminescent components with CIE (Commission International Eclairage) color coordinate Y values of less than 0.55, red light luminescent components with CIE color coordinate X values of more than 0.64, and green light luminescent components with CIE color coordinate Y values of more than 0.55. The full-color OLED display has the advantages of long service life, high fineness, high yield, large size and the like, and is beneficial to the increase of the total manufacture cost performance of the display.

The invention provides a self-supporting film provided with a microstructure surface and preparation method thereof in the technical field of fluorescence quantum solutions. Firstly, a fluorescence quantum solution and a PVA solution are respectively prepared, then the fluorescence quantum solution is added to the PVA solution for even mixing, and a fluorescence quantum/PVA mixed solution is obtained; then, the fluorescence quantum/PVA mixed solution is added to a mold provided with a microstructure at the bottom, finally heat curing is performed to prepare the self-supporting film provided with the microstructure surface. By arranging the microstructure on the surface of the fluorescent quantum dot self-supporting film, the solid-state fluorescence quantum yield and the corresponding light conversion efficiency are improved. The self-supporting film can be widely applied in lots of fields of photoelectric devices, biological science and the like.

A method for irradiating a biological tissue sample is provided, the method comprising: irradiating a portion of a biological tissue sample with a penetrating radiation beam for a first exposure period; subsequently irradiating the same or an adjacent biological tissue portion with a penetrating radiation beam for a second exposure period; the radiation dose incident on the tissue sample during the second exposure period being higher than the dose during the first exposure period. Also provided is an apparatus operative in accordance with the method. The method and apparatus have particular application in the characterisation of body tissue by x-ray diffraction, both in vitro and in vivo.

An array crystal module comprises a plurality of unit crystal strips (10). The exterior three-dimensional shape of the array crystal module is a frustum (12) or a combination of a right quadrangular prism (11) and the frustum (12), and the frustum (12) is used to be coupled with a photoelectric device (20). The frustum (12) comprises a first bottom face coupled with the photoelectric device (20) and a first top face opposed to the first bottom face, and the area of the first bottom face is smaller than that of the first top face. A fabrication method of the array crystal module includes: fabricating a crystal strip blank to obtain a unit crystal strip, performing the die cutting to obtain a unit crystal strip in the shape of a frustum or a unit crystal strip in the shape of a combination of a right quadrangular prism and a frustum according to a set obliquity and the thickness of the right quadrangular prism part, and assembling the unit crystal strips together to form an array crystal module. The above array crystal module, on the premise that the detection efficiency is guaranteed, can solve the problem of the light output loss of the crystal caused by the fact that the effective detection area of a photoelectric conversion device is smaller than a packaging area, thereby guaranteeing the sensitivity and performance of a detector.

The composite of the invention comprises (a) a polymer selected from ethylene/vinyl acetate, polyethylene terephthalate, ethylene tetrafluoroethylene, ethylene trifluorochloroethylene, perfluorinated ethylene-propylene, polyvinyl butyral, polyurethane and silicones; (b) an inorganic phosphor based on at least one element selected from rare earth elements, zinc and manganese, which has an external quantum efficiency of greater than or equal to 40% for at least one excitation wavelength of between 350 nm and 440 nm; an absorption of less than or equal to 10% for a wavelength of greater than 440 nm; a mean particle size of less than 1 μm; and this phosphor has an emission maximum in a range of wavelengths between 440 nm and 900 nm.

The invention relates to an image sensor and a formation method. The method comprises the steps of providing a semiconductor substrate, wherein the semiconductor substrate comprises a first surface and a second surface which are opposite to each other, and the semiconductor substrate comprises a plurality of first regions; forming a conversion light-emitting material layer on a surface of the second surface at each first region of the semiconductor substrate; and forming a filtering structure on surfaces of the conversion light-emitting material layer and the second surface of the semiconductor substrate. By the method, the performance of the image sensor is improved.

An organic electroluminescence device comprises a light transmissive substrate, a light scattering region which is disposed on the light transmissive substrate, and a light emissive layer having a luminescent point. The luminescent point is spaced from the light reflective electrode by a distance of d which satisfies the following equation:

The invention provides a forming method of a CMOS image sensor, and the method comprises the steps: forming a self-aligned silicide region barrier layer, and covering a pixel region; forming a stressmemory dielectric layer, a grid electrode covering the pixel region and the pixel region, and a side wall; carrying out annealing treatment on the stress memory dielectric layer on the pixel region; and removing the stress memory dielectric layer on the pixel region. The invention also provides a CMOS image sensor, comprising a semiconductor substrate, wherein the semiconductor substrate comprisesa pixel region and a logic region; the pixel region and the logic region are each provided with a grid electrode and a side wall; a self-aligned silicide region barrier layer is formed on the pixel region, and the grid electrode and the side wall on the pixel region; a stress memory dielectric layer is arranged on the pixel region, high stress of the stress memory dielectric layer is transferredinto the pixel region through annealing, and the migration rate of electrons generated by near-infrared light can be increased in a stress mode, so that the electrons generated by near-infrared lightare increased to become signal charges, and the collection efficiency of the near-infrared light is improved.

The invention discloses an improved structure of a scintillation detector in a neutron activation environment, wherein the improved structure of the scintillation detector is suitable for high-energy gamma-ray measurement. According to the principle of the detector, the energy of a gamma-ray generated by neutron activation is generally 1 to10 MeV; after the ray enters a crystal (5), the electron-pair effect and Compton reaction are produced to generate photoelectrons; high-energy electrons and photons are easy to escape out of a scintillator; the escaped photons are reflected back into the crystal (5) through a reflecting layer (3); a magnetic field provided by a solenoid (2) binds the escaped high-energy electrons back to the crystal (5) by the action of the Lorentz force, and energy is deposited in the crystal; and the photon yield is increased. The improved scintillation detector has the advantages of high measured energy spectrum resolution and high detection efficiency, and has a high practical value in high-precision nuclear spectroscopy measurement such as neutron activation elemental analysis.

The invention provides a semiconductor epitaxial structure and application thereof. The structure comprises: a substrate. a first semiconductor layer arranged on the substrate; an active layer arranged on the first semiconductor layer; a second semiconductor layer arranged on the active layer; and a hole injection layer arranged on the second semiconductor layer, wherein the hole injection layer comprises a non-or low-doped gallium nitride layer and/or a doped gallium nitride layer. According to the semiconductor epitaxial structure provided by the invention, the quality of the semiconductor epitaxial structure can be improved.

The invention discloses an image sensor and a method of forming the same, and the image sensor includes: a substrate including a first face and including an image region; a plurality of photoelectric doped regions which are positioned in the image region; a transmission grid structure which is positioned on the surface of the first surface of the image region; and a reflecting layer which is positioned on the first surface of the image region and on the transmission grid structure. The imaging quality of the image sensor is better.