Perovskite ultraviolet photoelectric detector and preparation method thereof

An electrical detector and perovskite technology, applied in the field of perovskite ultraviolet photodetectors and their preparation, can solve the problems of low detection rate and easy attenuation of perovskite detectors, achieve damage resistance, prolong device life, The effect of increasing the number of photons

Pending Publication Date: 2019-10-01
PEKING UNIV SHENZHEN GRADUATE SCHOOL
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  • Abstract
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Problems solved by technology

[0006] The invention provides a perovskite ultraviolet photodetector and its preparation method to solve the problems of low detection rate and easy attenuation of the perovskite detector in the deep ultraviolet region

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  • Perovskite ultraviolet photoelectric detector and preparation method thereof
  • Perovskite ultraviolet photoelectric detector and preparation method thereof
  • Perovskite ultraviolet photoelectric detector and preparation method thereof

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preparation example Construction

[0058] An embodiment of the present invention provides a method for preparing a perovskite ultraviolet photodetector, which is characterized in that it includes:

[0059] (1) Cleaning of ITO conductive glass substrate;

[0060] First, the etched ITO conductive glass substrate was ultrasonically cleaned with deionized water, acetone solution and alcohol for 15 minutes, and then the ITO conductive glass substrate was blown dry with nitrogen gas.

[0061] (2) Prepare perovskite light absorbing layer array;

[0062] The preparation of the perovskite light-absorbing layer array can be on the ITO conductive glass substrate, using a mask plate, depositing patterned PbI by thermal evaporation 2 (lead iodide) array, PbI 2 The thickness of the film is about 180 nm, and the side length of the square is 800 μm. Spin-coat the MAI solution with a concentration of 30mg / ml onto the patterned PbI at a speed of 3000rpm 2 on top of the film, forming PbI 2 / MAI stacking, and then annealing t...

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Abstract

The invention provides a perovskite ultraviolet photoelectric detector and a preparation method thereof. The perovskite ultraviolet photoelectric detector includes a quantum dot fluorescent body, a quantum dot fluorescent body CPI substrate completely covering the quantum dot fluorescent body, an ITO conductive glass substrate completely covering the quantum dot fluorescent body CPI substrate, a perovskite light absorption layer array located on the ITO conductive glass substrate and completely surrounded by the ITO conductive glass substrate and a PCBM electron transport layer, the PCBM electron transport layer located among the ITO conductive glass substrate, the perovskite light absorption layer array and a BCP buffer layer, the BCP buffer layer completely covering the PCBM electron transport layer, and an Au electrode located on the BCP buffer layer. A perovskite photodiode includes an ITO conductive glass substrate, a perovskite light absorption layer array, a PCBM electron transport layer, a BCP buffer layer and an Au electrode.

Description

technical field [0001] The invention relates to the field of photoelectric detection and imaging, in particular to a perovskite ultraviolet photodetector and a preparation method thereof. Background technique [0002] Hybrid organic-inorganic perovskite materials have attracted extensive attention due to their excellent optoelectronic properties, such as high light absorption coefficient, long charge carrier lifetime and diffusion length, and tunable bandgap. They are widely used as light-absorbing layers in different types of photodetectors to convert light signals into electrical signals. Perovskite photodiodes have the advantages of low dark current, fast response, and strong detection capabilities, and they have also been applied to detect light at X-ray, ultraviolet (UV), and near-infrared (NIR) wavelengths. [0003] All-inorganic cesium-lead halide-perovskite nanocrystals or quantum dots have excellent optical properties, such as high photoluminescence quantum yield, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/44H01L51/48
CPCH10K30/00H10K30/87Y02E10/549
Inventor 周航邹涛隅
Owner PEKING UNIV SHENZHEN GRADUATE SCHOOL
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