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Preparation method of CIGS solar cell film buffer layer material

A solar cell, copper indium gallium selenide technology, applied in circuits, photovoltaic power generation, electrical components and other directions, can solve the problems of poor film quality, poor photoelectric conversion performance, etc., achieve high quality factor, improve bonding strength, and improve dielectric. Performance and Effect of Photoelectric Conversion Efficiency

Inactive Publication Date: 2019-01-29
王敏
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a copper indium gallium selenium solar cell film buffer for the poor photoelectric conversion performance and poor film quality of the existing copper indium gallium selenide solar cell film in the heat treatment process. Layer material preparation method

Method used

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  • Preparation method of CIGS solar cell film buffer layer material

Examples

Experimental program
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example 1

[0019] Take the glass plate and scrub it three times with acetone and absolute ethanol respectively, dry it naturally and immerse it vertically in the modified mixed solution. During the immersion control, add 5% acetic acid solution dropwise to the modified mixed solution, Control the dropping rate at 25mL / min, wait for 25 minutes to drop, stop the dropping and let it sit for 6 hours, take out the glass plate and rinse it with deionized water for 3 times, dry it with nitrogen and let it stand to get a coated glass plate; press In terms of parts by weight, weigh 45 parts of deionized water, 10 parts of tantalum dioxide, 3 parts of magnesium carbonate and 10 parts of barium carbonate and place them in a mortar, grind and disperse and collect the dispersion slurry, and spin coat the dispersion slurry onto the coating substrate On the surface of the glass plate, control the rotation speed of 4000r / min, after 25s, bake at 350°C for 3h, then raise the temperature to 600°C at 5°C / min...

example 2

[0021] Take the glass plate and scrub it with acetone and absolute ethanol for 4 times respectively, dry it naturally and immerse it vertically in the modified mixed solution. During the immersion, add 5% acetic acid solution dropwise to the modified mixed solution. Control the dropping rate at 27mL / min, wait for 27 minutes to drop, stop the dropping and let it stand for 7 hours to deposit, take out the glass plate and rinse it with deionized water 4 times, dry it with nitrogen and let it stand to get the coated base glass plate; then press In terms of parts by weight, weigh 47 parts of deionized water, 12 parts of tantalum dioxide, 4 parts of magnesium carbonate and 12 parts of barium carbonate and place them in a mortar, grind and disperse and collect the dispersion slurry, and spin coat the dispersion slurry to coat On the surface of the base glass plate, control the rotation speed of 4500r / min, after 27s, bake at 375°C for 4h, then raise the temperature to 625°C at 5°C / min,...

example 3

[0023] Take the glass plate and scrub it with acetone and absolute ethanol for 5 times respectively, dry it naturally and immerse it vertically in the modified mixed solution. During the immersion, add 5% acetic acid solution dropwise to the modified mixed solution. Control the dropping rate at 30mL / min, wait for 30 minutes to drop, stop dropping and let it stand for deposition for 8 hours, take out the glass plate and rinse it with deionized water for 5 times, dry it with nitrogen and let it stand to obtain a coated base glass plate; then press In terms of parts by weight, weigh 50 parts of deionized water, 15 parts of tantalum dioxide, 5 parts of magnesium carbonate and 15 parts of barium carbonate in a mortar, grind and disperse and collect the dispersion slurry, and spin coat the dispersion slurry until coating On the surface of the base glass plate, control the rotation speed of 5000r / min, after 30s, bake at 400°C for 5h, then raise the temperature to 650°C at 5°C / min, hea...

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Abstract

The invention relates to a preparation method of a CIGS solar cell film buffer layer material, and belongs to the technical field of cell materials. The technical scheme of the invention adopts a sol-gel method, and a buffer layer is introduced on the surface of a CIGS film. Meanwhile, a role of resistance is played through reducing the interface state, so that internal short circuit of the cell is prevented, and the dielectric performance and photoelectric conversion efficiency of the film material are effectively improved. In addition, the CIGS solar cell film buffer layer material adopts the buffer layer and is coated by a precursor gel structure and dried, so that the bonding strength of the material on the surface is effectively improved. Through the mutual matching of an energy bandstructure between the buffer layer material and an absorption layer, a film with moderate thickness is formed on the basis. The damage imposed on the absorption layer by the preparation of a subsequent window layer material is reduced through improving the number of photons of the absorption layer, so that the surface conductivity and photoconductivity of the buffer layer material are effectivelyimproved, and photon-generated carriers are enabled to be outputted to an external circuit in time.

Description

technical field [0001] The invention relates to a method for preparing a buffer layer material of a copper indium gallium selenide solar cell thin film, belonging to the technical field of battery materials. Background technique [0002] The current depletion of fossil energy and increasingly serious environmental pollution are urging people to study clean and renewable energy to replace the gradually depleted non-renewable energy. Therefore, the development of clean and non-polluting energy such as wind energy, water energy, geothermal energy, hydrogen energy, and solar energy Utilization is increasingly important. Among them, the development of solar energy can be regarded as an endless source of energy due to the long life of the sun. Therefore, the development and utilization of thin-film solar cells has gradually become an important development direction of the current photoelectric conversion energy industry. At present, there are solar cells of the following materia...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0392H01L31/0445
CPCH01L31/03923H01L31/0445H01L31/18Y02E10/541Y02P70/50
Inventor 王敏韩桂林
Owner 王敏
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