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Preparation method for AlN powder

A technology of powder and aluminum powder, which is applied in the field of AlN powder preparation, can solve the problems of F and Cl ion residues, incomplete nitriding of aluminum powder, and lower production efficiency, so as to achieve large output, reduce crushing time, and improve thermal efficiency. The effect of conductivity

Active Publication Date: 2018-02-06
SHANGHAI TOYO TANSO
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This will cause two problems: (1) Too high temperature causes the synthesized aluminum nitride to partially decompose into yellow / brown aluminum; (2) Too high temperature causes the local aluminum nitride to be partially sintered and become high hardness block
[0011] In order to obtain loose AlN blocks for the subsequent crushing and grinding process, the nitrogen pressure can be reduced during the synthesis process, but this may lead to incomplete nitriding of the aluminum powder at the bottom of the crucible; it is also possible to increase the proportion of diluent aluminum nitride powder in the raw material, But it will reduce production efficiency; or adding ammonium salt (ammonium chloride, ammonium fluoride, etc.)

Method used

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  • Preparation method for AlN powder
  • Preparation method for AlN powder
  • Preparation method for AlN powder

Examples

Experimental program
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Effect test

Embodiment 1

[0039] A total of 5 kg of metal Al powder and aluminum nitride powder were mixed uniformly according to the weight ratio of 55:45, and then placed in a porous graphite container, and then placed in a self-propagating reaction synthesis furnace. After closing the furnace and vacuuming to 20Pa, feed the mixed gas of high-purity nitrogen and argon to 4MPa according to the volume ratio of 99:1, and then ignite the ignition agent with electricity to induce the reaction between the metal aluminum powder in the raw material powder and the charged nitrogen , the heat generated by this reaction will ensure that the follow-up reaction continues until all the metal aluminum powder reacts with nitrogen to complete. The composition of the ignition agent is metal Ti powder. The whole synthesis reaction lasted about 10 min, and then cooled to room temperature. After opening the furnace, it was observed that the synthesized aluminum nitride was in the form of an overall soft block, and there...

Embodiment 2

[0041] A total of 5 kg of metal Al powder and aluminum nitride powder were mixed uniformly according to the weight ratio of 60:40, and then placed in a porous graphite container, and then placed in a self-propagating reaction synthesis furnace. After closing the furnace and vacuuming to 20Pa, high-purity argon and high-purity nitrogen are introduced successively according to the volume ratio of 98:2, so that the mixed gas reaches 4MPa, and then the ignition agent is ignited by electricity to induce the metal aluminum powder in the raw material powder and The charged nitrogen reacts, and the heat generated by the reaction will ensure that the subsequent reaction continues until all the metal aluminum powder reacts with nitrogen. The composition of the ignition agent is metal Ti powder. The whole synthesis reaction lasted about 10 min, and then cooled to room temperature. After opening the furnace, it was observed that the synthesized aluminum nitride showed an overall soft blo...

Embodiment 3

[0043] A total of 5 kg of metal Al powder and aluminum nitride powder were mixed uniformly according to the weight ratio of 65:35, and then placed in a porous graphite container, and then placed in a self-propagating reaction synthesis furnace. After closing the furnace and vacuuming to 20Pa, high-purity argon and high-purity nitrogen are introduced successively according to the volume ratio of 95:5, so that the mixed gas reaches 4MPa, and then the ignition agent is ignited by electricity to induce the metal aluminum powder in the raw material powder and The charged nitrogen reacts, and the heat generated by the reaction will ensure that the subsequent reaction continues until all the metal aluminum powder reacts with nitrogen. The composition of the ignition agent is metal Ti powder. The whole synthesis reaction lasted about 10 min, and then cooled to room temperature. After opening the furnace, it was observed that the synthesized aluminum nitride showed an overall soft blo...

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Abstract

The invention relates to the technical field of powder preparation and particularly relates to a preparation method for homogeneous and high-purity AlN powder. In the process of compounding the AlN powder by nitrifying aluminum powder, less high-purity argon is introduced and the compounding temperature is reduced under the condition of guaranteeing complete nitrification, so that the compounded AlN powder is homogeneous and easy to smash. The AlN powder prepared by the method is capable of shortening the smashing time of the subsequent process and reducing the impurities introduced into the smashing medium, so that the high purity of the milled AlN powder is guaranteed. Compared with a common technology, the preparation method has the advantages that the smashing time is shortened by about 30% under the condition of same grain size and the oxygen content is reduced by about 0.2%.

Description

technical field [0001] The invention relates to the technical field of powder preparation, in particular to a method for preparing homogeneous and high-purity AlN powder. Background technique [0002] With the development of high-power semiconductor devices for applications such as LED lighting, electric locomotives, and hybrid vehicles, aluminum nitride ceramic substrates with high thermal conductivity are gradually gaining market acceptance, and as heat dissipation materials that replace glass fiber and alumina ceramic substrates, they have begun to scale up. use. The theoretical thermal conductivity of aluminum nitride is 320W / mK, but the highest reported thermal conductivity of aluminum nitride ceramic substrates is around 270W / mK, while the thermal conductivity of aluminum nitride ceramic substrates in actual use is usually Between 120-190W / mK. [0003] For the production of aluminum nitride ceramic substrates, aluminum nitride powder is usually first mixed with the c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/581C04B35/626
CPCC04B35/581C04B35/62605C04B2235/6586C04B2235/9607
Inventor 陈卫武詹国彬
Owner SHANGHAI TOYO TANSO
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