New method and system for TSV blind hole filling

Abstract

The invention discloses a new method and system for TSV blind hole filling. The new method includes the following steps that firstly, a silicon piece with a TSV blind hole is put into deionized water,vacuum suction pretreatment is conducted, and gas in the TSV blind hole is exhausted; secondly, the silicon piece obtained after pretreatment is integrally connected with an electroplating cathode; thirdly, an additive agent, an inhibiting agent and an accelerating agent are added into an electroplating solution, sufficient mixing is conducted, and a suspension electroplating solution is formed;fourthly, the suspension electroplating solution is added into an electroplating bath, an electroplating anode and an electroplating cathode of an electroplating power source are put into the suspension electroplating solution so that the silicon piece can be subjected to standing in the suspension electroplating solution, and the electroplating solution reaches adsorption balance preliminarily inthe TSV blind hole; fifthly, an inlet and an outlet of a circulation pump communicate with the suspension electroplating solution, the inlet communicates with the position of the electroplating anode, and the outlet communicates with the position of the electroplating cathode; and sixthly, a circulation pump is started, the electroplating power source is started at the same time, electroplating begins, and the flowing speed is provided for the suspension electroplating solution in the electroplating bath through the circulation pump. The filling efficiency can be effectively improved, and thecost is reduced.

Description

technical field [0001] The invention belongs to the field of semiconductor three-dimensional packaging, and in particular relates to a new method and system for filling TSV blind holes. Background technique [0002] Three-dimensional integrated manufacturing technology will promote a new round of devices with multiple functions, miniaturization, and high cost performance. In the next 10 years, it will achieve explosive growth in logic devices, sensors, high-bandwidth applications, digital storage, and flash memory, driving the widespread use of high-end chips. application. [0003] At present, a generally accepted method to achieve three-dimensional integration is to use three-dimensional vertical interconnection (Through-Silicon-Via, TSV) through the substrate to realize electrical signal transmission. This technical method can effectively reduce the interconnection length, reduce transmission delay and power consumption, increase data transmission bandwidth, simplify wiri...

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Problems solved by technology

[0005] In the above process, the principle of electroplating deposition in a mixed acidic solution is adopted. In order to avoid voids and gaps, it is necessary to use a small current density and consume a long time, resulting in low filling efficiency of high aspect ratio TSV plating. High production costs

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