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High energy storage efficiency ferroelectric polymer matrix dielectric film, preparation method of the same, and application of the same

A technology of ferroelectric polymer and dielectric film, which is applied in the direction of fixed capacitor dielectric and fixed capacitor parts, etc., can solve the problem that the solution method is not suitable for large-scale production, and achieve the effect of excellent energy storage performance and small dielectric loss

Active Publication Date: 2018-02-16
TSINGHUA UNIV
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  • Claims
  • Application Information

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Problems solved by technology

However, the solution method used in the preparation of these materials is not suitable for large-scale production

Method used

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  • High energy storage efficiency ferroelectric polymer matrix dielectric film, preparation method of the same, and application of the same
  • High energy storage efficiency ferroelectric polymer matrix dielectric film, preparation method of the same, and application of the same
  • High energy storage efficiency ferroelectric polymer matrix dielectric film, preparation method of the same, and application of the same

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preparation example Construction

[0049] The present invention also provides a method for preparing the ferroelectric polymer-based dielectric thin film according to the present invention, which includes the following steps:

[0050] Step 1), mixing the hexagonal boron nitride h-BN and the vinylidene fluoride-hexafluoropropylene copolymer P(VDF-co-HFP) in an organic solvent according to the ratio to obtain an electrospinning solution 1; Optionally, dissolving the vinylidene fluoride-hexafluoropropylene copolymer P(VDF-co-HFP) in an organic solvent to obtain an electrospinning solution 2;

[0051] Step 2), subjecting the electrospinning solution 1 to high-voltage electrospinning, or alternately performing high-voltage electrospinning on the electrospinning solution 1 and the electrospinning solution 2, to obtain a non-woven spinning body ;

[0052] Step 3), hot pressing the non-woven spinning body, naturally cooling to room temperature, and then quenching to obtain a ferroelectric polymer-based dielectric film...

Embodiment 1

[0065] Ultrasonically disperse h-BN in an organic solvent, sonicate for 10 hours at an ultrasonic power of 250w, and then do the batching according to 99vol%P(VDF-co-HFP)-1vol%h-BN(x=1), where each gram of solid The proportion of powder corresponding to 5 ml of mixed solvent, using acetone and N,N-dimethylformamide (DMF) as mixed solvent, stirring for 12 hours to make spinning solution for later use, the ratio of acetone and DMF in the mixed solvent is 2:3 .

[0066] A homogeneous spun body of polymer nanofilaments was prepared by high-voltage electrospinning. The parameters of the high-voltage electrospinning are: the positive and negative voltage difference is 5.9 kV; the rotation speed of the roller is 290 rpm, and the solution advancing speed is 1 mL per hour. After spinning, the spinning layer was hot-pressed at 190° C. and 490 dpi for 40 minutes, and then cooled down to room temperature naturally. The hot-pressed film was kept at 240° C. for 10 minutes and then quenche...

Embodiment 2

[0069] Ultrasonically disperse h-BN in an organic solvent, sonicate for 10 hours at an ultrasonic power of 250w, and then do the batching according to 97vol%P(VDF-co-HFP)-3vol%h-BN(x=3), wherein each gram of solid The proportion of powder corresponding to 5 ml of mixed solvent, using acetone and N,N-dimethylformamide (DMF) as mixed solvent, stirring for 12 hours to make spinning solution for later use, the ratio of acetone and DMF in the mixed solvent is 2:3 .

[0070] A homogeneous spun body of polymer nanofilaments was prepared by high-voltage electrospinning. The parameters of the high-voltage electrospinning are: the positive and negative voltage difference is 5.8 kV; the rotation speed of the roller is 285 rpm, and the solution advancing speed is 1 mL per hour. After spinning, the spinning layer was hot-pressed at 193° C. and 489 dpi for 40 minutes, and then cooled down to room temperature naturally. The hot-pressed film was kept at 240° C. for 10 minutes and then quenc...

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Abstract

The invention relates to a high energy storage efficiency ferroelectric polymer matrix dielectric film, a preparation method of the same, and an application of the same. The high energy storage efficiency ferroelectric polymer matrix dielectric film contains vinylidene fluoride-hexafluoropropene copolymer P(VDF-co-HFP) and hexagonal boron nitride h-BN, wherein by volume percentage, the proportionof the vinylidene fluoride-hexafluoropropene copolymer P(VDF-co-HFP) and the hexagonal boron nitride h-BN is (100x)%P(VDF-co-HFP)-x%h-BN, and 0< x<=7. The high energy storage efficiency ferroelectricpolymer matrix dielectric film has the advantages of being high in breakdown field strength, being high in energy storage density, being high in energy storage efficiency, being leadless and environmentally friendly, being excellent in energy storage performance, and being suitable for the high density energy storage field.

Description

technical field [0001] The invention relates to a ferroelectric polymer-based dielectric film with high energy storage efficiency, a preparation method and application thereof, and belongs to the field of dielectric materials. Background technique [0002] Dielectric capacitor-based energy storage devices have the advantages of higher power density, lower loss, and higher operating voltage than electrochemical-based energy storage devices such as supercapacitors and lithium batteries. Therefore, it is not only an important basic electronic component, but also widely used in basic energy storage devices such as electronic power systems and energy systems. [0003] The energy storage density of current commercial polymer-based dielectric materials such as BOPP is only ~2J / cm 3 , one to two orders of magnitude lower than electrochemical capacitors or batteries. The low energy storage density of polymers has become a bottleneck for its further development and application. Cer...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G4/18H01G4/20
Inventor 曾一林元华
Owner TSINGHUA UNIV
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