Discrete double barrel gate embedded u-channel transistor and method of making the same

Abstract

The invention relates to a discrete transistor with dual cylindrical grids and embedded with a U-shaped channel and a manufacturing method of the transistor. A highly-integrated metal-oxide-semiconductor field-effect transistor of which distance of 1 nanometer is kept between a source electrode and a drain electrode can be achieved. A cylindrical grid electrode is employed, and the control capability of the grid electrode on a U-shaped single-crystal channel is ensured on the premise that the grid electrode is not introduced to a groove formed by U-shaped single crystal, namely, the integration is improved, and the control capability of the grid electrode on the channel is ensured; and meanwhile, a cylindrical auxiliary-control electrode and the cylinder grid electrode which are separatelycontrolled are employed, the conflicts that the doping concentration of a conventional junction-free transistor channel is excessively low to cause that source-drain resistance is increased and the doping concentration is excessively high to cause that the mobility and the stability of the device are reduced are effectively solved, and thus, the transistor is suitable for promotion and application.

Description

technical field [0001] The invention belongs to the field of ultra-large-scale integrated circuit manufacturing, and in particular relates to a U-shaped channel transistor with embedded double-barrel gates and a manufacturing method thereof, which are suitable for ultra-high-integrated integrated circuit manufacturing. Background technique [0002] The basic unit of integrated circuits, MOSFETs, transistors, with the continuous reduction in size, the distance between the source electrode and the drain electrode has shrunk to tens of nanometers. On the one hand, the shortening of the channel leads to the weakening of the control ability of the gate electrode, which leads to a larger sub-threshold swing. , Increased leakage current, increased static power consumption, decreased potential barrier caused by drain electrode voltage, resulting in drift of threshold voltage, significant decrease in resistance to breakdown, etc. In order to improve the gate electrode control capabil...

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Problems solved by technology

[0004] In order to solve the problem that the inventor proposed before that the internal structure of the groove of the U-shaped channel field effect transistor is complicated, the integration degree is difficult to further improve, and the contradictory relationship between the high mobility of single crystal silicon and the low source resistance, etc., the present invention proposes to separate the two Barrel gate embedded U-shaped channel transistor and manufacturing method thereof

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