Semiconductor device and manufacturing method thereof

Abstract

The invention provides a semiconductor device and a manufacturing method thereof. The method comprises the steps of providing a semiconductor substrate comprising a resistive region and a capacitive region; forming a first semiconductor material layer and a dielectric layer on the semiconductor substrate; etching the first semiconductor material layer and the dielectric layer to form a resistive device and a capacitive device, the capacitive device having only a partial structure comprising the first semiconductor material layer and the dielectric layer; forming a second semiconductor materiallayer on the semiconductor substrate and etching the second semiconductor material layer to form a complete capacitive device structure comprising the first semiconductor material layer, the dielectric layer and the second semiconductor material layer; forming a sidewall material layer on two sides of the semiconductor substrate, the resistive device and the capacitive device; etching the sidewall material layer to form sidewall structures on the two sides of the resistive device and the capacitive device; and removing the dielectric layer on the first semiconductor material layer of the resistive device.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular, the invention relates to a semiconductor device and a preparation method thereof. Background technique [0002] At present, various semiconductor devices, such as transistors, resistors, and capacitors, are often used in integrated circuits at the same time. In order to improve production efficiency, when manufacturing integrated circuits, various semiconductor devices are often made to share the same manufacturing process as much as possible. For example, a resistive device generally has a polycrystalline layer structure, while a capacitive device generally has a dielectric structure sandwiched between two polycrystalline layers. made in steps. However, in the actual manufacturing process, the first polycrystalline layer and the intermediate dielectric layer are deposited at the same time, and then etched to form part of the structure of the resistive device and the capacitive devi...

AI Technical Summary

Problems solved by technology

But now it is found that the thickness of the dielectric layer is often uneven, resulting in poor uniformity of the characteristics of the resistance device, which affects the performance of the resistance device

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