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Rapid preparation method for graphene electrode

A graphene electrode, graphene layer technology, applied in cable/conductor manufacturing, equipment for manufacturing conductive/semiconductive layers, circuits, etc. Poor bending resistance and other problems, to achieve good application prospects, excellent mechanical properties, and the effect of improving service life

Inactive Publication Date: 2018-03-13
NANJING XUYURUI MATERIAL TECH CO LTD
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  • Abstract
  • Description
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Problems solved by technology

The main disadvantages of ITO transparent conductive materials are: 1. Indium is a rare earth element with limited resources and expensive prices; 2. ITO thin films are mainly prepared by vacuum sputtering, evaporation and other technologies, and the production process is complicated and costly. Difficult to prepare; 3. The ITO film is brittle and has poor bending resistance, so it is impossible to obtain a flexible transparent conductive layer

Method used

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  • Rapid preparation method for graphene electrode

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Embodiment Construction

[0025] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0026] see figure 1 , the present invention provides a technical solution:

[0027] A kind of fast preparation method of graphene electrode, described method comprises the steps:

[0028] s1. Provide a substrate and pretreat it; the substrate includes but not limited to polymethylacrylate, polycarbonate, polyethylene terephthalate, polystyrene, polyamide, polyimide, polysulfone, Polyethersulfone, polyoxymethylene, glass and ceramics, the visibl...

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Abstract

The invention relates to the technical field of graphene manufacturing and application, in particular to a rapid preparation method for a graphene electrode. The method comprises the following steps of (s1) providing a substrate and carrying out pretreatment; (s2) coating the substrate with a silver nanowire and obtaining a silver nanowire conducting layer; (s3) further coating the silver nanowireconducting layer with silver nanowire-graphene composite hydrogel to obtain a silver nanowire-graphene oxide layer; and (s4) further coating the silver nanowire-graphene oxide layer with graphene oxide to obtain a graphene oxide layer. The conductivity of the silver nanowire is improved by using graphene; by adopting the structures of the silver nanowire, silver nanowire-graphene and the graphene, the adhesive force and the wettability of the graphene on the silver nanowire are strengthened, the adhesive force and the oxidation resistance of a silver nanowire coating and the substrate are improved at the same time and the service life is prolonged.

Description

technical field [0001] The invention relates to the technical field of graphene manufacture and application, in particular to a rapid preparation method of graphene electrodes. Background technique [0002] Transparent conductive coatings are an important part of the transparent electrodes of many optoelectronic devices such as liquid crystal displays, organic light-emitting diodes, flexible displays, electronic paper, and solar cells. At present, the transparent conductive materials on the market mainly include indium tin oxide (ITO), antimony tin oxide (ATO), antimony zinc oxide (AZO), etc., among which ITO materials occupy a dominant position in the market. With the wide application of transparent conductive coatings, people have put forward higher requirements for their performance indicators. The main disadvantages of ITO transparent conductive materials are: 1. Indium is a rare earth element with limited resources and expensive prices; 2. ITO thin films are mainly pre...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B13/00H01B5/14
CPCH01B13/0026H01B5/14
Inventor 朱洋邵蓉
Owner NANJING XUYURUI MATERIAL TECH CO LTD
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