Complementary metal oxide semiconductor (CMOS) phase inverter and array substrate

Abstract

The invention provides a complementary metal oxide semiconductor (CMOS) phase inverter and an array substrate. The CMOS phase inverter comprises a P-type low-temperature poly-silicon thin film transistor and an N-type metal oxide thin film transistor which are electrically connected, wherein the P-type low-temperature poly-silicon thin film transistor and the N-type metal oxide thin film transistor conform to the following formula, C<n>(W<n> / L<n>)Mu<n>= C(W / L)Mu, C<n> and C are respectively capacitance of a grid insulation layer of the N-type metal oxide thin film transistor andcapacitance of a grid insulation layer of the P-type low-temperature poly-silicon thin film transistor, (W<n> / L<n>) and (W / L) are respectively a width-to-length ratio of a channel of the N-typemetal oxide thin film transistor and a width-to-length ratio of a channel of the P-type low-temperature poly-silicon thin film transistor, and Mu<n> and Mu are respectively mobility of the N-typemetal oxide thin film transistor and mobility of the P-type low-temperature poly-silicon thin film transistor. By the CMOS phase inverter, the performance of the CMOS phase inverter can be improved, and the fabrication difficulty and the production cost of the CMOS phase inverter are reduced.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a CMOS inverter and an array substrate. Background technique [0002] With the development of display technology, flat panel display devices including liquid crystal display (Liquid Crystal Display, LCD) and organic light emitting diode display (Organic Light Emitting Display, OLED) have become the most common display devices and are widely used. In various consumer electronics products such as mobile phones, televisions, personal digital assistants, digital cameras, notebook computers, and desktop computers. [0003] A CMOS (Complementary Metal Oxide Semiconductor, Complementary Metal Oxide Semiconductor) inverter is a device often used in flat panel display devices, and its main function is to receive an input signal and output an output signal logically opposite to the input signal. [0004] Existing CMOS inverters generally include an N-type thin film transistor (Thin Film ...

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Problems solved by technology

However, there will always be some metallization in the preparation of CNT materials, and the mobility of organic semiconductor TFTs is very low, and it is sensitive to water and oxygen in the environment, which makes the stability of P-type thin film transistors in existing hybrid CMOS very low. Difference

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