High Brightness LED Manufacturing Process

Abstract

Disclosed is a high-luminance LED preparation process. The preparation process comprises the steps of performing epitaxial growth of a buffer layer, a non-doped GaN layer, an N type GaN layer, a stress release layer, a multi-quantum-well layer, a P type electron barrier layer and a P type GaN layer on a substrate in sequence, wherein the N type GaN layer is divided into a highly doped N type GaN layer and a lightly doped N type GaN layer; the Si concentration of the highly doped N type GaN layer is higher than the Si concentration of the lightly doped N type GaN layer; an AlGaN layer is inserted between the highly doped N type GaN layer and the lightly doped N type GaN layer; the highly doped N type GaN layer adopts a stacked structure which consists of a doped nGaN layer and a non-doped uGaN layer; the nGaN layer is in contact with the non-doped GaN layer; and the uGaN layer is in contact with the nGaN layer. By dividing the N type GaN layer into the highly doped N type GaN layer andthe lightly doped N type GaN layer, relatively high electron concentration can be accumulated in the highly doped N type GaN layer, so that ions can jump from the highly doped N type GaN layer to thelightly doped N type GaN layer, and then jump to the multi-quantum-well layer grown subsequently to be compounded with holes in the multi-quantum-well layer to give out light, so that the light emitting efficiency of the multi-quantum-well layer is improved, and the luminous intensity of the LED is further improved.

Description

technical field [0001] The invention relates to the technical field of LEDs, in particular to a high-brightness LED preparation process. Background technique [0002] Light Emitting Diodes (LED for short) have the advantages of small size, colorful colors, and long service life. , toys and other fields. Group III nitrides represented by GaN are wide-bandgap semiconductors with direct band gaps, which have the advantages of high thermal conductivity, high luminous efficiency, stable physical and chemical properties, and the ability to achieve P-type or N-type doping, and the multi-element alloys of GaN The quantum well structure composed of InGaN and GaN can cover the entire visible light region, and has a high internal quantum efficiency, so GaN is an ideal material for making LEDs. [0003] GaN-based LED epitaxial wafers are usually grown on a sapphire substrate, and the buffer layer, undoped GaN layer, N-type GaN layer, stress release layer, multi-quantum well layer, P-t...

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to solve the above-mentioned technical problems and provide a high-brightness LED preparation process, aiming to solve the problems of low LED brightness obtained in the prior art.