Transverse power device high-voltage interconnection structure

A technology of lateral power devices and interconnection structures, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of increasing process complexity and achieve the effects of low cost, enhanced withstand voltage capability, and simple process preparation
CN107863387AActive Publication Date: 2018-03-30NANJING UNIV OF POSTS & TELECOMM +1
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Patent Information

Authority / Receiving Office
CN ยท China
Patent Type
Applications(China)
Current Assignee / Owner
NANJING UNIV OF POSTS & TELECOMM
Publication Date
2018-03-30

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Abstract

The invention provides a transverse power device high-voltage interconnection structure. An insulator area having a high dielectric constant is introduced into a drift region of a power device; and surface electrical field distribution caused by high-voltage interconnection is modulated by utilizing the area, thereby greatly enhancing voltage endurance capability of the device during high-voltageinterconnection and improving performance of the deice. The transverse power device high-voltage interconnection structure can be applied to a laterally-diffused field effect transistor LDMOS, a lateral PN diode or a lateral insulated gate bipolar transistor LIGBT, and is simple in process and low in cost.
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Description

technical field

[0001] The invention belongs to the technical field of semiconductor power devices, and in particular relates to a high-voltage interconnection structure of lateral power devices. Background technique

[0002] As we all know, in a high-voltage integrated circuit HVIC (High Voltage Integrated Circuit), the high-voltage interconnection (High Voltage Interconnection, HVI for short) used to transmit current signals between the high-voltage terminal and the low-voltage terminal on the same chip affects the development of HVIC. The key factor. The HVI connected from the high-voltage part directly crosses the surface of the device, affecting the electric field distribution on the surface of the device, resulting in an excessive local electric field, which significantly reduces the breakdown voltage. When reverse biased, HVI is positively charged relative to the device surface, which introduces an additional vertical vertical electric field, thereby increasing the p...

Claims

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