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Transverse power device high-voltage interconnection structure

A technology of lateral power devices and interconnection structures, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of increasing process complexity and achieve the effects of low cost, enhanced withstand voltage capability, and simple process preparation

Active Publication Date: 2018-03-30
NANJING UNIV OF POSTS & TELECOMM +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This structure uses multi-equipotential rings to realize high-voltage shielding and improve the breakdown voltage of the device, but the existence of multi-equipotential rings and p-top layers increases the complexity of the process

Method used

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  • Transverse power device high-voltage interconnection structure
  • Transverse power device high-voltage interconnection structure
  • Transverse power device high-voltage interconnection structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] Such as Figure 4a Shown is a schematic diagram of a three-dimensional structure of a lateral power device with a high-K insulating region provided by the present invention, Figure 4b is along Figure 4a The cross-sectional view of the device along the AB line. It can be seen that a trench of a certain shape is etched on the epitaxial layer 2 , and then an insulating material with a high dielectric constant is filled in the trench, thereby forming a semiconductor region 3 and a high-K insulator region 4 . Next, a semiconductor drain region 5, a semiconductor body region 6, a semiconductor body contact region 7, a semiconductor source region 8, a gate oxide layer 9, a gate metal 10, a source metal 11, Drain metal 12, insulating dielectric layer 13, high-voltage interconnection metal wire 15.

Embodiment 2

[0042] Under the condition that the basic structure remains unchanged, a flexible design is carried out, Figure 5a It is a high-voltage interconnection LDMOS with a high-K insulator region and a low-K insulating dielectric region provided by the present invention, Figure 5b is along Figure 5a The cross-sectional view of the device along the AB line. It can be seen from the figure that the insulating dielectric layer 13 in the area directly above the high-K insulator region 4 is a low-K insulating dielectric layer 14 made of a low-K material, while the insulating dielectric layer above the semiconductor region 3 in the drift region still uses is conventional silica.

Embodiment 3

[0044] Under the condition that the basic structure remains unchanged, a flexible design is carried out, Figure 6a It is a high-voltage interconnection LDMOS with a high-K insulating region and an extended low-K insulating dielectric region provided by the present invention, Figure 6b is along Figure 6a The cross-sectional view of the device along the AB line. It can be seen from the figure that the drift region of this structure is composed of a semiconductor region 3, a high-K insulating region 4, and a low-K insulating dielectric layer 14 above it. The thickness of the low-K insulating dielectric layer 14 is thicker than that of the insulating dielectric layer 13, and extends High-K insulator region 4. The insulating dielectric layer above the semiconductor region 3 is still conventional silicon dioxide.

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Abstract

The invention provides a transverse power device high-voltage interconnection structure. An insulator area having a high dielectric constant is introduced into a drift region of a power device; and surface electrical field distribution caused by high-voltage interconnection is modulated by utilizing the area, thereby greatly enhancing voltage endurance capability of the device during high-voltageinterconnection and improving performance of the deice. The transverse power device high-voltage interconnection structure can be applied to a laterally-diffused field effect transistor LDMOS, a lateral PN diode or a lateral insulated gate bipolar transistor LIGBT, and is simple in process and low in cost.

Description

technical field [0001] The invention belongs to the technical field of semiconductor power devices, and in particular relates to a high-voltage interconnection structure of lateral power devices. Background technique [0002] As we all know, in a high-voltage integrated circuit HVIC (High Voltage Integrated Circuit), the high-voltage interconnection (High Voltage Interconnection, HVI for short) used to transmit current signals between the high-voltage terminal and the low-voltage terminal on the same chip affects the development of HVIC. The key factor. The HVI connected from the high-voltage part directly crosses the surface of the device, affecting the electric field distribution on the surface of the device, resulting in an excessive local electric field, which significantly reduces the breakdown voltage. When reverse biased, HVI is positively charged relative to the device surface, which introduces an additional vertical vertical electric field, thereby increasing the p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/40
CPCH01L29/408H01L29/7816
Inventor 李曼都灵郭宇锋杨可萌张瑛杨磊潘志刚
Owner NANJING UNIV OF POSTS & TELECOMM
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