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Fluorinated Diblock Copolymers

A diblock copolymer and block technology, which is applied in the photoengraving process, instruments, optomechanical equipment and other directions of the pattern surface, can solve the problems of reducing the pattern line width, destroying the pattern, and reducing the quality of the semiconductor device.

Active Publication Date: 2021-08-06
SK INNOVATION CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, the block copolymers proposed so far have rather low etching selectivity between the blocks, thereby destroying the pattern, or it is difficult to reduce the line width of the pattern below a certain level, and in LER (Line Edge Roughness), There are considerable defects in aspects such as LWR (Line Width Roughness), which degrades the quality of semiconductor devices

Method used

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  • Fluorinated Diblock Copolymers
  • Fluorinated Diblock Copolymers
  • Fluorinated Diblock Copolymers

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0103]

[0104] Dissolve AIBN (azobisisobutyronitrile), RAFT reagent (cyanoisopropyldithiobenzoate) and methyl methacrylate in benzene at a molar ratio of 1:5:2800 (total concentration: 50 wt%), and reacted at 80° C. for 6 hours under a nitrogen atmosphere to synthesize a macroinitiator (number average molecular weight: 45400, molecular weight distribution: 1.2). Then, the macroinitiator, AIBN, styrene (ST) and pentafluorostyrene (PFS) were dissolved in dioxane at a molar ratio of 1:0.2:900:100 (total concentration: 60 wt%), and The reaction was carried out at 70 °C for 24 hours under nitrogen atmosphere to synthesize a diblock composed of a first block comprising polymethylmethacrylate (PMMA) and a second block comprising a random copolymer of styrene and pentafluorostyrene. Segment copolymer (number average molecular weight: 95200, molecular weight distribution: 1.2). The diblock copolymer thus produced was analyzed using NMR to confirm the mole fraction of each repeatin...

Embodiment 2-4

[0106] Using the macroinitiator of Example 1, relative to the macroinitiator, AIBN is 20 mol%, and the moles of styrene (ST) and pentafluorostyrene (PFS) are changed as described in Table 1 below, thus synthesizing diblock copolymers.

Embodiment 5

[0108] AIBN (azobisisobutyronitrile), RAFT reagent (cyanoisopropyl dithiobenzoate) and methyl methacrylate were dissolved in benzene with a molar ratio of 1:5:1500 (total concentration: 50wt %), and reacted at 80° C. for 6 hours under a nitrogen atmosphere to synthesize a macroinitiator (number average molecular weight: 21500, molecular weight distribution: 1.2). Thereafter, the macroinitiator, AIBN, styrene (ST) and pentafluorostyrene (PFS) were dissolved in dioxane at a molar ratio of 1:0.2:450:50 (total concentration: 60 wt%), and Reaction was carried out at 70° C. for 24 hours under a nitrogen atmosphere to synthesize a diblock copolymer (number average molecular weight: 42200, molecular weight distribution: 1.21). The diblock copolymer thus produced was analyzed using NMR to confirm the mole fraction of each repeating unit.

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Abstract

The present invention provides a diblock copolymer comprising a first block having a repeating unit represented by the following Chemical Formula 1 and a second block having a repeating unit represented by the following Chemical Formula 2: [Chemical Formula 1] [Chemical Formula 2 ] where R 1 -R 5 、X 1 -X 5 , l, n and m are as defined in claim 1.

Description

technical field [0001] The present invention relates to a diblock copolymer having excellent etch selectivity and capable of forming high-quality nanopatterns. Background technique [0002] Since the miniaturization and compactness of elements having high performance have been continuously demanded, there is a need for a technique for producing high-density nanopatterns by further reducing the pitch size of patterns (e.g., Pattern line width (critical dimension, CD)) and spacing between patterns to complete more patterns in a limited area. [0003] As one method for forming a nanopattern, photolithography performed in a top-down manner can be exemplified. However, due to the wavelength of the light source, the resolution limitation of the optical system, etc., the photolithography technology is limited in improving the resolution. [0004] As one of the efforts to overcome the resolution limitation in lithography and develop next-generation microfabrication techniques, dir...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C08F293/00C08F212/08C08F212/14
CPCC08F293/005C08F2438/03C08F212/08C08F212/14C08F12/20C08F2/38C08F214/18C08F212/20C08F220/14C08F4/04C08L33/10G03F7/0955G01Q60/24H01J37/28
Inventor 咸珍守郑连植金善英许允衡李光国宋承垣
Owner SK INNOVATION CO LTD