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Photoelectric cathode and preparation method thereof

A photocathode, p-type technology, used in the manufacture of light-emitting cathodes, photo-emission cathodes, main electrodes of discharge tubes, etc., can solve the problems of poor conductivity, low conductivity, and low quantum efficiency of non-activation photocathodes

Pending Publication Date: 2018-04-10
NO 12 RES INST OF CETC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Compared with the traditional photocathode, this kind of photocathode without Cs activation can have higher life and stability, but GaN crystal is a wide bandgap semiconductor, the conductivity of the material is small, the conductivity is poor, and a large number of electrons from the surface of the cathode After emission, the cathode surface is positively charged, and the electrons on the cathode electrode cannot be replenished into the cathode emission layer in time, which becomes an important factor limiting the performance of the cathode
[0006] Therefore, although the activation-free photocathode can be adapted to strong illumination, especially when a high-power laser is used as the light source, the emission current of the photocathode is much higher than that of the traditional photocathode, and it has stable emission performance and long service life, which is An ideal electron source with simple packaging process, convenient modulation and use, but the quantum efficiency of the activation-free photocathode is much lower than that of the traditional photocathode

Method used

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  • Photoelectric cathode and preparation method thereof
  • Photoelectric cathode and preparation method thereof
  • Photoelectric cathode and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0055] A photocathode, its optical structure and Al component structure diagram as shown in figure 2 As shown in (b), it includes a sapphire substrate 201, a p-type doped AlN buffer layer 202 formed on the sapphire substrate 201, a p-type GaN emission layer 203 formed on the p-type doped AlN buffer layer 202, and a p-type GaN emission layer formed on the The intrinsic type GaAs surface layer 204 on the p-type GaN emitter layer 203 .

[0056] Its preparation method comprises the following steps:

[0057] 1) A p-type AlN buffer layer 202 with a thickness of 200 nm is grown on a double-sided polished sapphire substrate 201 with a thickness of 0.46 mm by MOCVD epitaxial growth method, and the dopant atom is Mg, and the doping concentration is 1×10 16 cm -3 ;

[0058] 2) Using the MOCVD epitaxial growth method and the p-type doping process of semiconductor materials, grow p-type Al on the p-type AlN buffer layer 202 x Ga 1-x N emitter layer, where p-type Al x Ga 1-x The numb...

Embodiment 2

[0075] A photocathode, its optical structure and Al component structure diagram as shown in image 3 As shown, it includes a sapphire substrate 301, a p-type AlN buffer layer 302 formed on the sapphire substrate 301, a p-type GaN emission layer 303 formed on the p-type AlN buffer layer 302, and a p-type GaN emission layer 303 formed on the p-type GaN emission layer 303. The intrinsic type InP surface layer 304.

[0076] Its preparation method comprises the following steps:

[0077] 1) A p-type AlN buffer layer 302 with a thickness of 200 nm is grown on a double-sided polished sapphire substrate 301 with a thickness of 0.46 mm by MOCVD epitaxial growth method, and the dopant atom is Mg, and the doping concentration is 1×10 16 cm -3 ;

[0078] 2) Using the MOCVD epitaxial growth method and the p-type doping process of semiconductor materials, grow p-type Al on the p-type AlN buffer layer 302 x Ga 1-x N emitter layer, where p-type Al x Ga 1-x The number of sub-layers of th...

Embodiment 3

[0084] A photocathode, its optical structure and Al component structure diagram as shown in image 3 As shown, it includes a sapphire substrate 401, a p-type AlN buffer layer 402 formed on the sapphire substrate 401, and a p-type AlN buffer layer 402 formed on the p-type AlN buffer layer. 0.9 Ga 0.1 N emitter layer 403, formed on p-type Al 0.9 Ga 0.1 p-type Al on N emitter layer 403 0.65 Ga 0.35 N emitter layer 404, formed on p-type Al 0.65 Ga 0.35 A p-type GaN emission layer 405 on the N emission layer 404 and an intrinsic type GaAs surface layer 407 formed on the p-type GaN emission layer 405 .

[0085] Its preparation method comprises the following steps:

[0086] 1) A p-type AlN buffer layer 402 with a thickness of 200 nm is grown on a double-sided polished sapphire substrate 401 with a thickness of 0.46 mm by MOCVD epitaxial growth method, and the dopant atom is Mg, and the doping concentration is 1×10 16 cm -3 ;

[0087] 2) Using the MOCVD epitaxial growth meth...

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Abstract

The invention discloses a photoelectric cathode, which comprises a substrate, a p-type AlN buffer layer formed on the substrate, a p-type AlxGa1-xN emitting layer formed on the p-type AlN buffer layer, and a narrow bandgap semiconductor surface layer formed on the p-type AlxGa1-xN emitting layer. The bandgap width of the semiconductor material of the narrow bandgap semiconductor surface layer is less than or equal to 2. 3eV at the room temperature. The range of x in the p-type AlxGa1-xN emitting layer is 0 < = x < 1. According to the photoelectric cathode disclosed by the invention, the narrowbandgap semiconductor surface layer is grown on the p-type AlxGa1-xN emitting layer. The atoms of the narrow bandgap semiconductor surface layer and the atoms of the p-type AlxGa1-xN emitting layer are combined in a covalent bond mode, so that the surface energy band structure of the AlxGa1-xN material is effectively improved. The surface work function of the photoelectric cathode is reduced. Theelectron tunneling probability of the surface of the photoelectric cathode is improved.

Description

technical field [0001] The invention relates to the technical field of photocathode electron sources. More specifically, it relates to a photocathode and its preparation method. Background technique [0002] Photocathode is the core component of photoelectric conversion in low-light detection devices, and in recent years, the performance of photocathode has been improved year by year, and the types of photocathode materials in different wavelength bands are gradually increasing. Traditional photocathode has the advantages of high quantum efficiency, fast response speed, small dark current and concentrated energy of emitted electrons. The peak electron emission capabilities of reflective and transmissive GaAs photocathode spectral responses reach 379.9 and 245.2mA / W, respectively. [0003] Traditional photocathode mainly adopts cesium (Cs) atom adsorption to reduce its own work function. GaAs photocathode can form a negative electron affinity surface, and electrons excited f...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J1/34H01J9/12
CPCH01J1/34H01J9/12
Inventor 郝广辉邵文生张珂于志强高玉娟
Owner NO 12 RES INST OF CETC
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