A kind of flexible colorless and transparent polyimide film and preparation method thereof
A technology of polyimide film and transparent polyimide, applied in the coating and other directions, can solve the problems of low oxygen and water vapor permeability and high thermal expansion coefficient of polyimide film, and achieve low thermal expansion coefficient and extended application. Field, effect of low oxygen transmission rate and water vapor transmission rate
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Embodiment 2
[0046] Dissolve 8.778 grams of TFDB into 98 ml of DMF at room temperature, mechanically stir until TFDB is completely dissolved, add 7.306 grams of 6FDA and 3.226 grams of BPDA to the above solution under stirring, and stir for 12 hours to generate a polyamide with a solid content of 15 wt%. Acid glue, add 11.182g acetic anhydride and 5.591g triethylamine to polyamic acid glue solution, generate polyimide solution after stirring for 12 hours.
[0047] The formed polyimide solution was precipitated in ethanol and dried to obtain a polyimide resin. Take an appropriate amount of polyimide resin to prepare polyimide resin glue in DMAc. After vacuum degassing the polyimide resin glue, cast it on a clean glass plate, put it on a heating table and bake it at 80°C for 1 hour until the solvent evaporates, and after the film is cured, move the glass plate coated with the film into In the high-temperature oven, the oven is processed from room temperature to 250 °C at a heating rate of 5...
Embodiment 3
[0052] Dissolve 8.778 grams of TFDB into 98 ml of DMF at room temperature, mechanically stir until TFDB is completely dissolved, add 7.306 grams of 6FDA and 3.226 grams of BPDA to the above solution under stirring, and stir for 12 hours to generate a polyamic acid with a solid content of 15 wt%. Glue, add 11.182g of acetic anhydride and 5.591g of triethylamine to the polyamic acid glue solution, and stir for 12 hours to generate a polyimide solution.
[0053] The coating process is as in Example 1.
[0054] The buffer layer is prepared by magnetron sputtering (RF sputtering) on SiO 2 , the preparation conditions were as in Example 2, the sputtering power was 1.5KW, and the thickness of the buffer layer was controlled to be about 140nm.
[0055] The oxygen transmission rate, water vapor transmission rate, light transmission rate and thermal expansion coefficient of the obtained film were tested, and the results are shown in Table 1.
[0056] Table 1
[0057] LT(...
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