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Composite nanoscale semiconductor material AZO/Nb2O5/Pt gas-sensitive element and preparation method thereof

A nano-semiconductor and gas sensor technology, applied in nanotechnology, nanotechnology, analytical materials, etc., can solve the problem of high detection limit of gas sensors, meet the requirements of trace concentration detection, fast response recovery, and small volume.

Active Publication Date: 2018-05-04
HARBIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The present invention is to solve existing C with aluminum-doped zinc oxide (AZO) as sensitive element 2 h 5 The technical problem of high detection limit of OH gas sensor, and provide composite nano-semiconductor material AZO / Nb 2 o 5 / Pt gas sensor and preparation method thereof

Method used

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  • Composite nanoscale semiconductor material AZO/Nb2O5/Pt gas-sensitive element and preparation method thereof
  • Composite nanoscale semiconductor material AZO/Nb2O5/Pt gas-sensitive element and preparation method thereof
  • Composite nanoscale semiconductor material AZO/Nb2O5/Pt gas-sensitive element and preparation method thereof

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specific Embodiment approach 1

[0017] Specific implementation mode one: the composite nano-semiconductor material AZO / Nb of this embodiment mode 2 o 5 / Pt gas sensor is in Al 2 o 3 A layer of nano-semiconductor material AZO / Nb loaded on a ceramic tube 2 o 5 / Pt, among which the nano-semiconductor material AZO / Nb 2 o 5 The molar ratio of Zn and Nb in the / Pt is (8-9):1; the mass of Pt accounts for 3%-5% of the total mass of the composite nano-semiconductor material.

specific Embodiment approach 2

[0018] Specific implementation mode two: the composite nano-semiconductor material AZO / Nb described in the first implementation mode 2 o 5 The preparation method of the gas sensor of / Pt, carries out according to the following steps:

[0019] Step 1: According to the mol ratio of zinc acetate and hexamethylenetetramine is 1: (2~3), the amount of substance of soluble aluminum salt is 3%~5% of zinc acetate, zinc acetate, hexamethylenetetramine Tetramine and soluble aluminum salts are added to water, mixed evenly, then added to the hydrothermal kettle, and then the hydrothermal kettle is placed in a furnace at a temperature of 120-130°C to react for 12-15 hours, and the product obtained by the reaction is then centrifugally cleaned, Dried to obtain AZO powder;

[0020] Step 2: Weigh AZO powder and Nb 2 o 5 powder, where Zn and Nb in AZO powder 2 o 5 The molar ratio of Nb in the powder is 8-9:1, first dissolve the AZO powder in deionized water to obtain the AZO solution; the...

specific Embodiment approach 3

[0024] Embodiment 3: This embodiment differs from Embodiment 2 in that the temperature of the hydrothermal reaction in step 1 is 125° C., and the reaction time is 13 hours. Others are the same as in the second embodiment.

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Abstract

The invention discloses a composite nanoscale semiconductor material AZO / Nb2O5 / Pt gas-sensitive element and a preparation method thereof and relates to a composite nanoscale semiconductor material gas-sensitive element and a preparation method thereof. The invention aims to solve a technical problem that the conventional ethanol gas sensor taking aluminum-doped zinc oxide as a sensitive element has high detection limit. The composite nanoscale semiconductor material AZO / Nb2O5 / Pt gas-sensitive element disclosed by the invention is formed by loading a layer of nanoscale semiconductor material AZO / Nb2O5 / Pt on an Al2O3 ceramic tube. The preparation method comprises the following steps: preparing AZO powder; mixing an AZO solution and an Nb2O5 solution to obtain a white precipitate, washing anddrying the white precipitate, and sintering to obtain AZO / Nb2O5 powder; adding H2PtCl6 into the powder for size mixing, coating the Al2O3 ceramic tube, and sintering, thereby obtaining the gas-sensitive element. The gas-sensitive element has an ethanol concentration detection range of 5-500ppm and can be used for online monitoring and trace detection.

Description

technical field [0001] The invention relates to a composite nano semiconductor material gas sensor and a preparation method thereof. Background technique [0002] C 2 h 5 OH is an important chemical raw material, which is widely used in national defense chemical industry, medical and health care, food industry, industrial and agricultural production. It is a colorless and transparent liquid under normal temperature and pressure. Its vapor can form an explosive mixture with air, and its rapid and accurate detection has important application value. Aluminum-doped zinc oxide (AZO) is currently used as C 2 h 5 There are more and more research reports on OH gas sensors. The sensor of AZO inorganic semiconductor nanomaterials has the advantages of simple structure, low cost and low power consumption. However, C with aluminum-doped zinc oxide (AZO) as the sensitive element 2 h 5 OH gas sensor can only detect C 2 h 5 When the OH concentration is above 100ppm, it cannot meet...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/00C04B41/88C01G33/00C01G9/02B82Y30/00
CPCB82Y30/00C01G9/02C01G33/00C01P2002/72C01P2004/82C04B41/5122C04B41/88G01N27/00C04B41/5051C04B41/5049C04B41/4539C04B41/0072
Inventor 李赞
Owner HARBIN UNIV
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