Method for enhancing ohmic contact of gallium oxide semiconductor device

Abstract

The invention provides a method for improving gallium oxide semiconductor device ohmic contact. The method comprises the steps of conducting plasma etching surface treatment on a gallium oxide semiconductor and adjusting the roughness and oxygen vacancy on the surface of the gallium oxide semiconductor by controlling an etching technology, so that the surface roughness is within 1 micrometer, andthe oxygen vacancy is improved; growing a metal layer with a corresponding power function on the gallium oxide semiconductor after being subjected to the plasma etching surface treatment to form a semiconductor device with the ohmic contact. By means of the method, application and popularization of a gallium oxide material are facilitated; besides, according to a plasma etching method, the ohmic contact is improved to be not limited to the gallium oxide material, and the method can also be expanded and applied to other semiconductor devices.

Description

technical field

[0001] The disclosure belongs to the technical field of semiconductors, and in particular relates to a method for enhancing the ohmic contact of a gallium oxide semiconductor device. Background technique

[0002] The continuous popularization and development of the third-generation semiconductor materials SiC and GaN have played a key role in new energy, smart grid, electric vehicles, high-speed trains, radar, aerospace and other fields. Gallium oxide has a band gap of 4.8eV, which is a wide band gap semiconductor material. The breakdown field strength is about 8MV / cm, which is about three times that of 4H-SiC and GaN, and the preparation cost of gallium oxide is low. These characteristics Make it a potential stock in the field of high-power devices.

[0003] In today's semiconductor development process, contact is a very critical step, which affects the performance of the entire device and the power consumption of the device. Among them, ohmic contact has ...

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