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Preparation method for BaTiO2-based ultra-high switch ratio RRAM

A technology of resistive switching device and on-off ratio is applied in the field of preparation of BaTiO3-based ultra-high on-off ratio resistive switching devices, which can solve the problems of low resistance switching, slow Flash storage operation speed, and complicated preparation process, and achieve ultra-high resistive switching ratio. , good resistance stability, the effect of simple preparation process

Inactive Publication Date: 2018-05-18
YANGZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Traditional Flash storage faces problems such as slow operation speed, high loss, and short life, which are far from meeting actual needs
However, the traditional thin-film BaTiO 3 Resistive memory devices have low resistance switching ratio and cumbersome preparation process, resulting in small products, high cost, and poor flexibility, which also limit their application in the industrial field.

Method used

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  • Preparation method for BaTiO2-based ultra-high switch ratio RRAM
  • Preparation method for BaTiO2-based ultra-high switch ratio RRAM
  • Preparation method for BaTiO2-based ultra-high switch ratio RRAM

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preparation example Construction

[0024] BaTiO 3 The preparation method of the base ultrahigh switching ratio resistive switch device, the steps are as follows:

[0025] (1) Quartz slices will be selected and ultrasonicated successively with acetone, absolute ethanol, and deionized water. Among them, the size of quartz slices is 10mm*10mm, and ultrasonication is performed for 10 minutes;

[0026] (2) Take Ba(CH 3 COO) 2 The powder was dissolved in a mixed solution of glacial acetic acid and ethylene glycol methyl ether with a volume ratio of 1:1 and stirred to obtain solution A;

[0027] (3) Select Ti(OC 4 h 9 ) 4 The solution was dissolved in a mixed solution of ethanol and lactic acid with a volume ratio of 1:1, and stirred to obtain solution B;

[0028] (4) Dissolve PVP powder in the mixed solution of A and B, and stir in a water bath to obtain solution C;

[0029] (5) Spinning BaTiO on a quartz sheet with a glass rod 3 For micron fiber, the fiber is annealed in a tube furnace at 1100±50°C for 50~70...

Embodiment

[0031] Select a 10mm*10mm quartz plate, and use acetone, absolute ethanol, and deionized water to sonicate for 10 minutes successively; select Ba(CH 3 COO) 2 The powder (5.1g) was dissolved in a mixed solution of 20ml glacial acetic acid and 20ml of ethylene glycol methyl ether, and after stirring for half an hour, solution A was obtained; and Ti(OC 4 h 9 ) 4 The solution (7.4g) was dissolved in a mixed solution of 20ml ethanol and 2ml lactic acid, and stirred for 20 minutes to obtain solution B; then the PVP powder (0.5g) was dissolved in the mixed solution of A and B, and stirred in a water bath at 85°C for 8 hours , to obtain solution C. BaTiO was then spun on a quartz sheet using a glass rod 3 micron fibers, and finally the fibers were annealed in a tube furnace at 1100°C for 1 hour.

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Abstract

The invention discloses a preparation method for a BaTiO2-based ultra-high switch ratio RRAM (Resistive Random Access Memory). The preparation method includes steps of (1) dissolving Ba(CH3COO)2 powder in a mixed solution of glacial acetic acid and ethylene glycol monomethyl ether and stirring, and obtaining a solution A; (2) dissolving a Ti(OC3H9)4 solution in a mixed solution of ethyl alcohol and lactic acid, stirring and obtaining a solution B; (3) dissolving PVP powder in a mixed solution of A and B, performing water bath at a temperature of 85+ / -5 DEG C and stirring, and obtaining a solution C; (4) weaving BaTiO3 fibers on a clean quartz plate, and performing annealing treatment at a temperature of 1100+ / -50 DEG C. The method provided by the invention is simple in preparation processand achieves one-step processing; the required raw materials are low in price and the synthetic amount is large; the prepared RRAM is flexible in size, ultra high in resistance switch ratio and good in resistance change stability under voltage regulation.

Description

technical field [0001] The invention belongs to the field of functional materials, in particular to a BaTiO 3 A method for preparing a resistive switching device based on an ultrahigh switching ratio. Background technique [0002] With the development of information technology. Traditional Flash storage faces problems such as slow operation speed, high loss, and short lifespan, which are far from meeting actual needs. However, the traditional thin-film BaTiO 3 Resistive memory devices have a low resistance switch ratio, cumbersome preparation process, small product, high cost, and poor flexibility, which also limit their application in the industrial field. [0003] BaTiO 3 It is an important resistive material, the preparation of BaTiO 3 The fiber is expected to improve the status quo and realize the resistive switching response under voltage regulation. Contents of the invention [0004] The object of the present invention is just to overcome above-mentioned shortc...

Claims

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Application Information

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IPC IPC(8): H01L45/00
CPCH10N70/8836H10N70/021
Inventor 缪志雷沈君王强邓小颖曾祥华陈磊
Owner YANGZHOU UNIV
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