Device and technology for treating polycrystalline silicon byproduct slurry

A technology of polysilicon and slurry, applied in the direction of feeding device, halosilane, silicon compound, etc., can solve the problems of large investment, high energy consumption, high pollution, etc., achieve low energy consumption, reduce material loss, and be environmentally friendly

Pending Publication Date: 2018-05-25
JIANGSU ZHONGNENG POLYSILICON TECH DEV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] At present, the main production methods of trichlorosilane are two forms of ebullating bed and fixed bed, but both of them have low yield, high energy consumption, large investme

Method used

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  • Device and technology for treating polycrystalline silicon byproduct slurry
  • Device and technology for treating polycrystalline silicon byproduct slurry
  • Device and technology for treating polycrystalline silicon byproduct slurry

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] Such as figure 1 As shown, a device using a slurry bed to treat slurry in the production process of polycrystalline silicon includes a slurry bed reactor 2, and the outer wall of the slurry bed reactor 2 is provided with a slurry inlet and an HCl raw material inlet , the bottom of the slurry bed reactor 2 communicates with the waste tank 9 through a pipeline, and the top of the slurry bed reactor 2 communicates with the first storage tank 5 with the first heat exchanger through a pipeline, and the slurry bed A heat exchange device 10 is provided outside the reactor 2, and the heat exchange device is a jacket.

[0049] Wherein, the inside of the slurry bed reactor 2 is provided with a demister 7 near the top, which is used for treating the foam generated by the reaction materials in the slurry bed reactor.

[0050] Wherein, there are 2 described slurry feed inlets, 3 HCl raw material feed inlets, and one HCl raw material feed inlet is located at the bottom of the slurry...

Embodiment 2

[0054] Such as figure 2 As shown, it is basically similar to the device in Example 1, the difference is that a heat exchange device 10 is provided outside the slurry bed reactor 2, the heat exchange device is a coil, and the slurry inlet is 3 There are 3 HCl raw material inlets, and two of the slurry inlets are communicated with the bottom of the flash tower 1 through pipelines, and the other slurry inlet is used to feed catalyst and / or cold hydrogenation Overhaul and return silicon powder. The top of the flash tower 1 is communicated with the second storage tank 3 with the third heat exchanger through a pipeline, and the top of the third heat exchanger is communicated with the outside atmosphere through a pipeline, and the chlorosilane liquid is collected through a pipeline above the flash tower 1, and flash A raw material feeding port is provided below the steaming tower 1 . As a preference, the second storage tank 3 with the third heat exchanger is preceded by the fourth...

Embodiment 3

[0056] use figure 1 or figure 2 The device shown is a process for processing the slurry in the polysilicon production process. The catalyst, the slurry in the polysilicon production process, and / or the silicon powder returned by cold hydrogenation maintenance are fed into the slurry inlet, and the HCl raw material is simultaneously fed into the HCl The raw material feed port controls the temperature of the slurry bed reactor by circulating condensing medium into the jacket, and the chlorosilane gas obtained by the reaction enters the first storage tank with the first heat exchanger through the top pipe of the slurry bed reactor. The tank is condensed into liquid silane and collected, and the non-condensable gas is emptied through the pipeline, and the waste after reaction is deposited at the bottom of the slurry bed reactor, and is regularly discharged to the waste tank.

[0057] Wherein, the catalyst is one or more of cupric chloride, cuprous chloride, aluminum chloride and...

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PUM

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Abstract

The invention discloses a device for treating polycrystalline silicon byproduct slurry. The device comprises a slurry bed reactor, wherein a slurry feeding opening and an HCl raw material feeding opening are formed in an outer wall of the slurry bed reactor; the bottom of the slurry bed reactor is communicated with a waste material tank through a pipeline; the top of the slurry bed reactor is communicated with a first storage tank with a first heat exchanger through a pipeline; a jacket is arranged at the outer part of the slurry bed reactor. The invention further discloses a technology for treating the polycrystalline silicon byproduct slurry by utilizing the device. According to the device, a special system for treating the polycrystalline silicon byproduct slurry takes the slurry bed reactor as a main part and is simple in structure and scientific and reasonable in design; the device is used for treating the slurry in a polycrystalline silicon production process and can be used forconverting active silicon powder in the slurry into a production raw material chlorosilane, so that the utilization of the silicon powder is maximized and closed circulation of polycrystalline siliconproduction is completed.

Description

technical field [0001] The invention belongs to the technical field of the photovoltaic industry, and in particular relates to a device and a process for processing polysilicon by-product slag. Background technique [0002] At present, the mainstream process for producing polysilicon in the photovoltaic industry is the improved Siemens method, which produces a large amount of by-product silicon tetrachloride in the production of polysilicon. Now the main treatment method is to convert it into trichlorohydrogen, the raw material for polysilicon production, through cold hydrogenation or thermal hydrogenation process. silicon. In the production process of polysilicon and chlorosilane, chlorosilane slurry is inevitably produced in the corresponding reaction device and purification process (the main solid impurity is silicon powder (including silicon powder returned from hydrochlorination unit maintenance); liquid composition Divided into silicon tetrachloride, trichlorosilane, ...

Claims

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Application Information

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IPC IPC(8): C01B33/107B01J19/14B01J19/24B01J4/00
CPCB01J4/004B01J19/14B01J19/24C01B33/107C01B33/10715C01B33/10742B01J2219/00103
Inventor 吴德智
Owner JIANGSU ZHONGNENG POLYSILICON TECH DEV
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