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Etching solution composition, etching method and preparing method of array substrate

A technology of etching solution and composition, which is applied in the field of etching solution composition for multilayer films, can solve the problems of etching, inability to be uniformly etched, difficult wiring, etc., and achieve the effect of reducing costs and shortening the overall process time

Inactive Publication Date: 2018-05-25
DONGWOO FINE CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, although the conventional etchant composition can etch a double-layer film produced by mainly depositing the main wiring on the barrier film, it can etch a multi-layered film with slightly more types of metals. Plated wiring is not easy to be etched together by wet etching process
Specifically, in the case of a four-layer film, the same etching amount should be maintained for all four-layer films, but since the etching rates of the respective films corresponding to the four-layer film are different, the etching rate due to the different etching rates of the respective films occurs. Causes problems that cannot be etched uniformly
[0005] On the other hand, Korean Laid-Open Patent No. 10-2011-0057644 discloses an etchant composition for etching a titanium-copper double-layer film using persulfate as the main oxidant without using hydrogen peroxide, but the composition of the above-mentioned patent publication There is a problem that it is impossible to etch the wiring formed by vapor-depositing multiple layers of a double-layer film or more in a wet etching process.

Method used

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  • Etching solution composition, etching method and preparing method of array substrate
  • Etching solution composition, etching method and preparing method of array substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1～ Embodiment 3、 comparative example 1～ comparative example 4

[0051] Example 1-Example 3, Comparative Example 1-Comparative Example 4: Manufacture of etching liquid composition

[0052] 180 kg of etching solution compositions of Examples 1 to 3 and Comparative Examples 1 to 4 were produced according to the composition shown in Table 1 below, and the balance of water was included so that the total weight of the etching solution composition became 100 wt. %.

[0053] [Table 1]

[0054] (unit weight%)

[0055]

[0056] (Note) APS: Ammonium persulfate; AF: Ammonium fluoride; AcOH: Acetic acid

experiment example 1

[0057] Experimental example 1. Multilayer film etching evaluation

[0058] After maintaining each chemical reagent at 30° C., it was checked for each composition whether or not collective etching of the four-layer film was possible. The etching machine (Etcher) uses a 0.5-generation device that can handle glass size (Glass Size), the chemical reagent injection is a spray type (Spray Type), and the spray (Spray) pressure is 0.1MPa. The exhaust pressure of the etching zone (Etching zone) is maintained at 20Pa. Regarding the four-layer film substrate structure prepared for the etching experiment, four layers deposited in the order of titanium (Ti) / indium oxide film (IZO) / silver (Ag) / indium oxide film (ITO) from the bottom film were used. membrane to proceed.

[0059] [Table 2]

[0060] distinguish

[0061] Can confirm from the test result of above-mentioned Table 2, as the composition of the embodiment 1~4 of the multilayer film etchant composition of the present inv...

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Abstract

The invention provides an etching solution composition, etching method and preparing method of an array substrate. The etching solution composition is an etching solution composition for a multilayerfilm, and contains A) persulfate, B) a fluorine compound, C) inorganic acid, D) organic acid, E) phosphorous acid and F) ferric nitrate. The invention provides an etching solution capable of using a chemical reagent to etch wiring formed by various metals and a multilayer film for multi-functionalization in the future, thereby providing an etching solution composition for a multilayer film which can shorten total process time and reduce cost.

Description

technical field [0001] The present invention relates to an etchant composition for a multilayer film used in an etching process of a titanium / indium oxide film / silver / indium oxide film used as a pixel electrode, an etching method using the etchant composition for a multilayer film, And a method for manufacturing a TFT array substrate for a display device using the etching method. Background technique [0002] A liquid crystal display device (LCD device) has attracted special attention in flat panel display devices due to its characteristics of providing clear images due to its excellent resolution, low power consumption, and the ability to manufacture thinner display screens. In recent years, thin film transistor (thin film transistor, TFT) circuits are representative as circuits for driving display elements used in such liquid crystals, and typical thin film transistor liquid crystal display (TFT-LCD) elements constitute pixels of a display screen. (pixel). In the TFT-LCD...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K13/08C23F1/16H01L21/77
CPCH01L27/1259C09K13/08C23F1/16C09K13/06C23F1/44G02F1/136227H01L29/786H01L21/30604
Inventor 刘仁浩金范洙南基龙
Owner DONGWOO FINE CHEM CO LTD