Graphene carbon nano tube composite film and preparation method and application thereof

A nanotube composite, graphene carbon technology, applied in the field of electronics, can solve the problems of poor heat dissipation effect of power devices, achieve good contact and adhesion, reduce device thermal resistance and junction temperature, and improve heat dissipation.

Active Publication Date: 2018-05-25
SHANGHAI UNIV +1
View PDF2 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] In view of the shortcomings of the prior art described above, the object of the present invention is to provide a graphene carbon nanotube c

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Graphene carbon nano tube composite film and preparation method and application thereof
  • Graphene carbon nano tube composite film and preparation method and application thereof
  • Graphene carbon nano tube composite film and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0040] The following describes the implementation of the present invention through specific specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0041] See Figure 1 to Figure 7 . It should be noted that the illustrations provided in this embodiment only illustrate the basic idea of ​​the present invention in a schematic way, and the figures only show the components related to the present invention instead of the number, shape, and shape of the components in actual implementation. For size drawing, the type, quantity, and proportion of each component can be changed at will during ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a graphene carbon nano tube composite film and a preparation method and application thereof. The preparation method comprises the following steps that S1, a substrate is provided, and the whole or at least one face of the substrate is made of a graphene catalyst; S2, electroplating is conducted, thus, a carbon nano tube is attached to the surface of the substrate, and the graphene catalyst is not fully covered with the carbon nano tube; and S3, graphene continues to grow on the face, containing the graphene catalyst, of the substrate through a chemical gas phase method,and the graphene carbon nano tube composite film is obtained. The graphene carbon nano tube composite film and the preparation method and application thereof have the characteristic of being simple intechnology, the graphene carbon nano tube composite film obtained through the non-transferring self growing technology is good in quality, and contact and attaching between the composite film and thecatalyzing substrate are good.

Description

technical field [0001] The invention belongs to the field of electronics, and relates to a graphene carbon nanotube composite film and a preparation method and application thereof. Background technique [0002] With the increase of main switching frequency, conversion power supply voltage and power in electronic circuits, higher requirements are put forward for the rectifier switching diodes that play a controlling role. Hybrid Schottky diodes (MPS) have the characteristics of high blocking voltage, low leakage current, faster switching speed, larger conduction current, and smaller conduction voltage. For MPS with vertical structure, the copper base in the device package structure not only supports the chip, but also is one of the working electrodes of the chip. With the rapid development of the third-generation semiconductor technology, the power density of MPS is increasing, generating more and more heat, and the chip junction temperature rises rapidly. When the temperatu...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C25D9/04C23C16/26C23C28/04H01L23/492H01L23/373H01L23/42
CPCC23C16/26C23C28/04C25D9/04H01L23/373H01L23/42H01L23/4928
Inventor 杨连乔陈章福徐小雪张建华殷录桥吴行阳廖威李起鸣特洛伊·乔纳森·贝克
Owner SHANGHAI UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products