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Transistors and methods of forming them

A technology of transistors and process gases, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as poor electrical performance of transistors, achieve strong blocking ability, improve performance, and reduce impact

Active Publication Date: 2020-11-27
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In the prior art, the adjustment of the threshold voltage of the transistor is realized by forming a work function layer in the gate structure of the transistor, but the transistor with a high-K metal gate in the prior art has the problem of poor electrical performance

Method used

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  • Transistors and methods of forming them
  • Transistors and methods of forming them
  • Transistors and methods of forming them

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Experimental program
Comparison scheme
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Embodiment Construction

[0035] It can be seen from the background art that the transistors with high-K metal gates in the prior art have the problem of poor electrical performance. Combining with a schematic diagram of the gate structure of an NMOS transistor, the reasons for its poor electrical performance are analyzed:

[0036] refer to figure 1 , shows a schematic structural diagram of a gate structure of an NMOS transistor.

[0037] The NMOS transistors include:

[0038] The substrate 10; the gate dielectric layer 11 located on the substrate 10; the cap layer 12 located on the gate dielectric layer 11; the work function layer 13 located on the cap layer 12; the work function layer 13 located on the work function layer 13 barrier layer 15; a metal layer 16 located on the barrier layer 15, the metal layer 16, the barrier layer 15, the work function layer 13, the cap layer 12 and the gate dielectric layer 11 are used to form grid structure.

[0039] The NMOS transistor has a high-K metal gate, s...

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Abstract

The invention relates to a transistor and a formation method thereof. The formation method comprises the steps of providing a substrate; forming a gate dielectric layer on the substrate; forming a work function layer on the gate dielectric layer; forming a nitride layer on the work function layer; forming a barrier layer on the nitride layer; and forming a metal layer on the barrier layer, whereinthe metal layer, the barrier layer, the nitride layer, the work function layer and the gate dielectric layer are used for forming a gate structure. The technical scheme of the invention can reduce influences imposed on threshold voltage of the transistor by diffusible ions, thereby being conducive to reducing a work function value of the work function layer, thus reducing the threshold voltage ofthe formed transistor, and improving the performance of a formed semiconductor structure.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a transistor and a forming method thereof. Background technique [0002] The main semiconductor device of an integrated circuit, especially a very large scale integrated circuit, is a metal-oxide-semiconductor field effect transistor (MOS transistor). With the continuous development of integrated circuit manufacturing technology, the technology nodes of semiconductor devices continue to decrease, and the geometric dimensions of semiconductor devices follow Moore's law. When the size of semiconductor devices is reduced to a certain extent, various secondary effects caused by the physical limits of semiconductor devices appear one after another, and it becomes more and more difficult to scale down the feature size of semiconductor devices. Among them, in the field of semiconductor manufacturing, the most challenging thing is how to solve the problem of large leakage curr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336H01L21/28H01L29/78H01L29/49
CPCH01L21/28088H01L29/4966H01L29/66795H01L29/785
Inventor 徐建华邓浩
Owner SEMICON MFG INT (SHANGHAI) CORP