High temperature resistance switching power source based on gallium nitride device and DSP chip and working method thereof

A technology of switching power supply and working method, which is applied in the direction of high-efficiency power electronic conversion, instruments, electrical components, etc., and can solve the problem that there is no method or device to improve the switching power supply circuit to cope with the high temperature underground working environment, the selection range is limited, and the switching power supply circuit cannot be solved. high temperature issues

Inactive Publication Date: 2018-05-25
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Secondly, the operating temperature of 175° has exceeded the operating temperature of most integrated chips. In addition, to cope with high input voltage, active chips are no longer applicable. The choice of circuit components is limited to high temperature resistant passive components, and the selection range is very limited
[0004] Chinese patent authorization announcement number 204497993U discloses a switching power supply circuit for intelligent drilling tools, but the switching power supply circuit is to improve the stability of the output direct current, and cannot solve the high temperature problem faced by the switching power supply circuit in the drilling field; existing In the technology, there is no method or device to improve the switching power supply circuit to cope with the high temperature working environment in the mine

Method used

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  • High temperature resistance switching power source based on gallium nitride device and DSP chip and working method thereof
  • High temperature resistance switching power source based on gallium nitride device and DSP chip and working method thereof
  • High temperature resistance switching power source based on gallium nitride device and DSP chip and working method thereof

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Experimental program
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Effect test

Embodiment 1

[0040] Such as Figure 1-3 Shown.

[0041] A high temperature resistant switching power supply based on gallium nitride devices and DSP chips, including Chebyshev II input anti-aliasing filter circuit, GaN transistor, switching power supply buck circuit, and DSP chip;

[0042] The Chebyshev II input anti-aliasing filter circuit is connected to the drain of the GaN transistor; the drain of the GaN transistor is connected to the adc pin of the DSP chip through the switching power supply buck circuit; the pwm output pin of the DSP chip is connected to the gate of the GaN transistor The pole is connected to realize the control of the switching time of the GaN transistor; the DSP chip, the GaN transistor and the switching power supply buck circuit form a closed-loop control system.

[0043] Chebyshev II input anti-aliasing filter circuit filters out the high frequency part of the input signal, so that the signal input to the adc pin meets the sampling theorem. In terms of the frequency r...

Embodiment 2

[0050] Such as Figure 4-6 Shown.

[0051] A working method of the switching power supply circuit as described in embodiment 1, including the following steps:

[0052] 1) Input signal input Chebyshev type II input anti-aliasing filter circuit, Chebyshev type II input anti-aliasing filter circuit filters out the high frequency part of the input signal, so that the signal input to the adc pin meets the sampling theorem;

[0053] 2) The input signal is input to the GaN transistor through the drain of the GaN transistor after passing the Chebyshev II input anti-aliasing filter circuit;

[0054] 3) The pwm output signal triggers the interrupt of the adc pin;

[0055] 3.1) When an interrupt comes, the instruction register IR inside the DSP chip is filled with a new value, and the program in the DSP chip jumps out of the main function and executes the adc interrupt function;

[0056] 3.2) The adc interrupt function performs digital-to-analog conversion on the output signal of the buck circuit t...

Embodiment 3

[0067] As for the working method of the switching power supply circuit described in embodiment 2, further, in the step 3.4), the design method of the control algorithm function is to obtain the buck circuit transfer function in the s domain through the Laplace transform of the buck circuit, Realize the preliminary modeling of the closed-loop system; with the help of matlab, add moving zeros and poles on the basis of the existing Bode diagram to obtain the control function; the control function is transformed into the time domain through inverse Laplace transform, and finally The z transformation is the control algorithm function.

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Abstract

The invention relates to a high temperature resistance switching power source based on a gallium nitride device and a DSP chip and a working method thereof. The high temperature resistance switching power source comprises a closed loop control system composed of the DSP chip, a GaN transistor and a switching power source buck circuit, and the system is a single input and single output negative feedback system, the high temperature resistance DSP chip is adopted as a control chip, the GaN field effect transistor is adopted as a switch, and a Chebyshev filter circuit composed of a high temperature resistance inductors, capacitors and resistors can meet the requirement for high temperature switching power sources in the prior art.

Description

Technical field [0001] The invention relates to a high temperature resistant switching power supply based on a gallium nitride device and a DSP chip and a working method thereof, and belongs to the technical field of switching power supplies. Background technique [0002] In the past thirty years, silicon power switching devices have gradually evolved from appearing to becoming a bottleneck, and all aspects of their performance have been squeezed out today. Although there are balanced parameters and a wide range of application examples, silicon power switching devices are no longer competent in the high-temperature field, especially when the temperature is higher than 175°. The third-generation semiconductor devices represented by gallium nitride (GaN) can cope with operating temperatures above 200° and are superior to traditional silicon power switching devices in many electrical properties. [0003] In the field of logging, the operating temperature of electronic components is o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02M3/157H02M1/08H02M1/14
CPCH02M1/08H02M1/14H02M3/157Y02B70/10
Inventor 李康陈卓
Owner SHANDONG UNIV
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