Silicon nano-wire gas sensor element with characteristics of ultra-high room temperature sensitivity and ultra-fast room temperature response

A technology of silicon nanowires and response characteristics, applied in the field of high-performance and low-power gas sensors, can solve the problems of limited specific surface area, slow response and recovery characteristics, and high array density

Inactive Publication Date: 2018-06-05
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the ordered silicon nanowire arrays prepared by liquid-phase chemical etching have the disadvantages of high array density and limited specific surface area, which restrict the room temperature sensitive performance of silicon nanowire-based gas sensors. Response recovery characteristics have become the bottleneck for the continued development and application of silicon nanowire gas sensors, especially for the weak response signal at room temperature of ppb-level rarefied gases, which makes it difficult to meet the current demand for continuously lowering sensor detection limits

Method used

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  • Silicon nano-wire gas sensor element with characteristics of ultra-high room temperature sensitivity and ultra-fast room temperature response
  • Silicon nano-wire gas sensor element with characteristics of ultra-high room temperature sensitivity and ultra-fast room temperature response
  • Silicon nano-wire gas sensor element with characteristics of ultra-high room temperature sensitivity and ultra-fast room temperature response

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Experimental program
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Embodiment 1

[0031] (1) Cleaning of monocrystalline silicon wafers

[0032]Ultrasonic clean silicon wafers in 4:1 hydrogen peroxide and concentrated sulfuric acid for 10 minutes, then ultrasonically clean them in acetone solvent, absolute ethanol, and deionized water for 5 minutes to remove surface oil and organic impurities, and place them in an infrared oven for thorough drying Dry;

[0033] (2) Configure chemical etching solution

[0034] Silver nitrate is dissolved in hydrofluoric acid (water) solution, and the concentration of hydrofluoric acid in the gained solution is 4M, and the concentration of silver nitrate is 0.01M;

[0035] (3) Ag-catalyzed etching to form silicon nanowire arrays

[0036] Put the silicon wafer washed in step (1) into the solution prepared in step (2) to etch to form a silicon nanowire array. The etching time is controllable. As the etching time increases, the length of the nanowires increases, and the length of the nanowires increases. The etching time is c...

Embodiment 2

[0044] (1) Cleaning of monocrystalline silicon wafers

[0045] Ultrasonic clean the silicon wafer in 4:1 hydrogen peroxide and concentrated sulfuric acid for 20 minutes, then ultrasonically clean it in acetone solvent, absolute ethanol, and deionized water for 5-10 minutes to remove surface oil and organic impurities, and place it in an infrared oven dry thoroughly;

[0046] (2) Configure chemical etching solution

[0047] Dissolving silver nitrate in hydrofluoric acid solution, the concentration of hydrofluoric acid in the obtained solution is 6M, and the concentration of silver nitrate is 0.03M;

[0048] (3) Ag-catalyzed etching to form silicon nanowire arrays

[0049] Put the silicon wafer washed in step (1) into the solution prepared in step (2) to etch to form a silicon nanowire array. The etching time is controllable. As the etching time increases, the length of the nanowires increases, and the length of the nanowires increases. The etching time is controlled at 180mi...

Embodiment 3

[0057] (1) Cleaning of monocrystalline silicon wafers

[0058] Ultrasonic clean silicon wafers in 4:1 hydrogen peroxide and concentrated sulfuric acid for 12 minutes, then ultrasonically clean them in acetone solvent, absolute ethanol, and deionized water for 6 minutes to remove surface oil and organic impurities, and place them in an infrared oven for thorough drying dry; (2) configure chemical etching solution

[0059] Dissolve a certain amount of silver nitrate in a certain concentration of hydrofluoric acid solution, the concentration of hydrofluoric acid in the resulting solution is 5M, and the concentration of silver nitrate is 0.02M;

[0060] (3) Ag-catalyzed etching to form silicon nanowire arrays

[0061] Put the silicon wafer washed in step (1) into the solution prepared in step (2) to etch to form a silicon nanowire array. The etching time is controllable. As the etching time increases, the length of the nanowires increases, and the length of the nanowires increase...

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PUM

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Abstract

The invention provides a silicon nano-wire gas sensor element with characteristics of ultra-high room temperature sensitivity and ultra-fast room temperature response, wherein the silicon nano-wire gas sensor element contains a p-type or n-type single-crystal silicon wafer substrate and a platinum electrode, and a silicon nano-wire array sensitive layer integrating Ag nanometer crystal modification and rough surface structure modification is arranged between the single-crystal silicon wafer substrate and the platinum electrode. According to the present invention, the sensitivity, the responsespeed, the detection limit and other room temperature gas sensitivity performances of the silicon nano-wire array-based gas sensor can be significantly improved, and the ultra-high room temperature sensitivity and the ultra-fast room temperature response of the sensor to NO2 gas can be achieved.

Description

technical field [0001] The invention relates to the field of high-performance and low-power gas sensors, and more specifically relates to a silicon nanowire ordered array-based gas sensor element with ultrahigh room temperature sensitivity and ultrafast room temperature response characteristics and a preparation method thereof. Background technique [0002] In recent years, the deteriorating atmospheric environment and the increasing safety standards of human beings for their own living environment have made the development of various high-performance gas sensors that can quickly and accurately detect trace gases increasingly urgent. Today, with the rapid development of industrialization, a large amount of toxic and harmful gases (such as NO 2 , NO, H 2 S, CO, SO 2 etc.), seriously polluting the environment and posing a clear threat to human health. For example, NO from vehicle exhaust and industrial emissions x Such toxic gases are easy to form acid rain and photochemic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/12B82Y10/00
CPCB82Y10/00G01N27/12
Inventor 秦玉香刘雕王泽峰姜芸青
Owner TIANJIN UNIV
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