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A kind of polishing pad and the method for preparing polishing pad

A polishing pad and reaction technology, which is applied in the direction of grinding/polishing equipment, manufacturing tools, metal processing equipment, etc., can solve the problems of reduced density pass rate, affecting the stability of polishing results, and poor repeatability in process control.

Active Publication Date: 2020-06-12
HUBEI DINGLONG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

On the one hand, such uncontrollable thermal expansion will lead to poor repeatability of process control, which will reduce the pass rate of the density of the whole system. In addition, different density distributions on the same plane may affect the stability of the results during the polishing process.

Method used

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  • A kind of polishing pad and the method for preparing polishing pad
  • A kind of polishing pad and the method for preparing polishing pad
  • A kind of polishing pad and the method for preparing polishing pad

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0075] Mix a predetermined amount of liquid prepolymer, curing agent and microspheres, set to 60 degrees after degassing and circulate in the pouring machine, liquid MOCA (4,4'-diamino-3,3'-dichlorodi Benzene) was set to cycle at 116°C. Pre-adjust the substrate and outer wall temperature to stabilize to 50°C. Mix it in a high-speed mixing head at a certain ratio and pour it into the center of the mold cavity to make it evenly leveled. During the pouring process, it can be measured that the temperature of the mixed material is 65.3°C and the viscosity is 10000cps (50°C). When the overall thickness of the pouring is about 5 cm, stop pouring, and control the temperature rise rate of the reaction material to 3.9° C. / min during the gelation process. As the gelation process proceeds, the temperature of the substrate and the outer wall begins to drop, and the heat dissipation of the system is strengthened. When the temperature difference is less than 10°C, the temperature of the re...

Embodiment 2

[0079] The same method as in Example 1 was used to prepare a polishing pad, except that the temperature of the mixed material was 63.8°C; the temperature rise rate of the reaction material was controlled to be 3.5°C / min during the gelation process; the temperature difference between the reaction material and the mold was maintained at 12.8°C. The yield and polishing NU value of the prepared polishing pad are shown in Table 1.

Embodiment 3

[0081] Adopt the method identical with embodiment 1 to prepare polishing pad, and its difference is: mixed material temperature is 58.2 ℃, and viscosity is 13000cps; Control the temperature rise rate of reaction material in gelation process to be 5.5 ℃ / min; Reaction material and The temperature difference of the mold was maintained at 18.3°C. The yield and polishing NU value of the prepared polishing pad are shown in Table 1.

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Abstract

The invention provides a polishing pad and a method used for preparing the polishing pad. The method used for preparing the polishing pad comprises the following steps that liquid prepolymer, a curingagent and a hollow tiny element are mixed at the temperature ranging from 50 DEG C-85 DEG C so as to form a solidifiable mixture, the viscosity of the solidifiable mixture ranges from 3000 cps-20000cps, curing is carried out after gelling, and the polishing pad is obtained; the liquid prepolymer is polyurethane prepolymer formed by reacting with polyhydric alcohols and isocyanate as raw materials; a gelling die is characterized in that the die is provided with a real-time temperature sensor and a first numerical control system, a draught hood is provided with an infrared thermometer and a second numerical control system, and regulation and control over the temperature of reaction materials in the die are achieved. According to the preparation method, the optimal technological conditionsin the pouring and gelling process are given, the gelling die can accurately regulate and control the gelling temperature change in real time, the homogeneity of the polishing mat is high from top tobottom, the number of stripes is small, the density and performance are uniform, and the product yield approximates to 100%.

Description

technical field [0001] The invention relates to the technical field of chemical mechanical planarization polishing, and more particularly, to a polishing pad and a method for preparing the polishing pad. Background technique [0002] In the manufacture of integrated circuits and other electronic devices, layers of conductive, semiconducting and dielectric materials deposited on the surface of semiconductor wafers need to be removed. Chemical-mechanical planar polishing or chemical-mechanical polishing (CMP) is currently the most commonly used technique for surface polishing of workpieces. CMP is a technology that combines chemical etching and mechanical removal, and is also the most commonly used technology for planarization of semiconductor wafers. At present, in the conventional CMP process, it is installed on the bracket assembly of the equipment, and at the same time, it sets the position where it contacts with the polishing pad during the polishing process. During the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B24B37/20B24B37/24B24D18/00C08G18/32C08G18/08
CPCB24B37/20B24B37/24B24D18/0009C08G18/08C08G18/10C08G18/3814
Inventor 朱顺全李翔刘敏
Owner HUBEI DINGLONG CO LTD