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Photodetection and electroluminescence dual-function integrated device and preparation method and application thereof

An integrated device and dual-function technology, which is applied in the field of photodetection and electroluminescence dual-function integrated devices and their preparation, can solve problems such as chromaticity impurity, achieve huge application potential, improve integration, and reduce manufacturing time.

Active Publication Date: 2018-06-22
HUBEI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

For example, Yasuhiro Shiraki et al. (X.Xu, T.Chiba, T.Maruizumi, Y.Shiraki, Lasers and Electro-Optics Pacific Rim, 2013.) used Ge quantum dots as functional materials to easily obtain optoelectronics with a switch ratio of up to 104 Response, but the device has problems such as chromaticity impurity in electroluminescence
A.J.Heeger et al. (G.Yu, C.Zhang, A.J.Heeger, AppliedPhysics Letters 1994,64,1540.) use polymer (2-methoxy-5-(2′-ethyl-hexyloxy)-l,4-phenylene vinylene) As a functional material, it has also obtained nearly 10 4 The switching ratio, but the external quantum effect of electroluminescence of the device is only 1%

Method used

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  • Photodetection and electroluminescence dual-function integrated device and preparation method and application thereof
  • Photodetection and electroluminescence dual-function integrated device and preparation method and application thereof
  • Photodetection and electroluminescence dual-function integrated device and preparation method and application thereof

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preparation example Construction

[0041] The present invention provides a method for preparing a bifunctional integrated device described in the above technical solution, comprising the following steps:

[0042] (1) ZnO microspheres are prepared on the upper surface of the bottom electrode, and are annealed to form an n-type semiconductor layer;

[0043] (2) CsPbBr is prepared on the upper surface of the n-type semiconductor layer in the step (1) 3 , after annealing treatment, an i-type intermediate layer is formed;

[0044] (3) a Mg-doped GaN substrate is arranged on the upper surface of the i-type intermediate layer in the step (2), and after encapsulation, a dual-function integrated device is obtained; the upper surface of the Mg-doped GaN substrate is pre-prepared A top electrode is provided.

[0045] In the invention, ZnO microspheres are prepared on the upper surface of the bottom electrode, and are annealed to form an n-type semiconductor layer. In the present invention, the bottom electrode is prefe...

Embodiment 1

[0072] (1) The FTO conductive glass was ultrasonically washed with deionized water, acetone and ethanol for 15 minutes, and then treated in an ultraviolet ozone environment for 30 minutes, and the obtained FTO conductive glass was used as the bottom electrode;

[0073] (2) Dissolve 0.8924g of zinc nitrate hexahydrate, 0.4206g of hexamethylenetetramine, and 0.2240g of sodium citrate dihydrate in 50mL of deionized water, stir for 15min until fully dissolved; add 200mL, 250mL, 300mL and 350mL respectively Deionized water to obtain precursor solutions diluted 5 times, 6 times, 7 times and 8 times;

[0074] (3) Slowly pour the precursor solution into a beaker with a bottom electrode on the bottom, immerse the bottom electrode, then place the beaker in a water bath, and keep it warm at 90°C for 2 hours; take out the obtained sample, wash it with deionized water, and then Dry at 80°C for 2h in a nitrogen atmosphere, and finally anneal at 300°C for 2h in a horse-boiler furnace to form...

Embodiment 2

[0077] (1) The FTO conductive glass was ultrasonically washed with deionized water, acetone and ethanol for 15 minutes, and then treated in an ultraviolet ozone environment for 30 minutes, and the obtained FTO conductive glass was used as the bottom electrode;

[0078] (2) Dissolve 0.8924g zinc nitrate hexahydrate, 0.4206g hexamethylenetetramine and 0.2240g sodium citrate dihydrate in 300mL of deionized water, stir for 15min until fully dissolved to obtain a precursor solution; Slowly pour it into a beaker with a bottom electrode on the bottom, immerse the bottom electrode, then place the beaker in a water bath, and keep it warm at 90°C for 2h; take out the obtained sample, wash it with deionized water, and then dry it in a nitrogen atmosphere at 80°C for 2h. Finally, annealing treatment at 300°C for 2 hours in a horse-boiler furnace forms a ZnO microsphere n-type semiconductor layer on the upper surface of the bottom electrode;

[0079] (3) 0.5mmol, 0.75mmol, 1mmol, 1.25mmol,...

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Abstract

The invention provides a photodetection and electroluminescence dual-function integrated device. The device comprises a bottom electrode, an n-type semiconductor layer arranged on the upper surface ofthe bottom electrode, an i-type intermediate layer arranged on the upper surface of the n-type semiconductor layer, a p-type semiconductor layer arranged on the upper surface of the i-type intermediate layer, and a top electrode arranged on the upper surface of the p-type semiconductor layer. The n-type semiconductor layer is formed by ZnO microspheres. The i-type intermediate layer is formed byCsPbBr3. The p-type semiconductor layer is an Mg-doped GaN substrate. According to the invention, the dual-function integrated device realizes high-responsibility ultraviolet detection and ultrapure green light emission; through the active layer separation of luminescence and detection, the dual-function integrated device with different electroluminescence regions and optical response bands is acquired for the first time; mutual reduction of luminescence and detection performances is effectively avoided; and the device has a great application potential.

Description

technical field [0001] The invention relates to the technical field of photodetection and electroluminescence, in particular to a dual-function integrated device of photodetection and electroluminescence and its preparation method and application. Background technique [0002] How to prepare light-emitting diodes (LEDs) with high efficiency, long life, safety and stable performance has increasingly become the focus of research. However, LEDs are more than just light-emitting displays; they could also be optical sensors. As early as 1970, ForrestM.Mims (F.M.Mims, Silicon connections: Coming ofage in the electronic era, McGraw-Hill Companies, 1986; F.M.Mims III, L.Circuits, Inc., NewYork, NY 1973, 60.) introduced systematically Interaction between luminescence and detection through solids. Under forward bias, electrons and holes are injected into the junction region, and recombine to emit light; under 0V or negative bias, the built-in electric field separates photogenerated ...

Claims

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Application Information

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IPC IPC(8): H01L27/02H01L31/08H01L31/12H01L31/18
CPCH01L27/02H01L27/0203H01L31/08H01L31/12H01L31/18Y02P70/50
Inventor 王浩周海宋泽浩
Owner HUBEI UNIV