Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Post-cleaning technology applied to texture surface making for solar cell

A solar cell and post-cleaning technology, which is applied in the field of solar cells, can solve the problems of reducing reflectivity and poor improvement effect, and achieve the effect of solving the problem of excessive drying time and thorough dehydration of silicon wafers

Inactive Publication Date: 2018-06-29
HENGDIAN GRP DMEGC MAGNETICS CO LTD
View PDF4 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to overcome the problem of poor removal and improvement effect of the post-cleaning process of traditional solar cell texturing, the present invention provides a post-cleaning process for solar cell texturing with improved texture structure and good removal effect, thereby reducing the reflectivity, Effectively increase the open circuit voltage and short circuit current to improve the efficiency of solar cells

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] (1) pre-cleaning: the use of mass fraction of 30% hydrogen peroxide, 40% sodium hydroxide and deionized water to prepare a mass fraction containing hydrogen peroxide is 1.5%, and the concentration of sodium hydroxide is a pre-cleaning solution of 6%. Clean the single crystal silicon wafer in the pre-cleaning solution for 140s, and the cleaning temperature is 60°C;

[0029] (2) Texturing: use sodium hydroxide, single crystal texturing additive and deionized water to prepare the mass fraction containing sodium hydroxide as 1.3%, and the mass fraction of additive is 0.7% texturing solution, the single crystal after pre-cleaning Texturing of crystalline silicon wafers, the texturing time is 800s, and the texturing temperature is 77°C;

[0030] (3) Cleaning solution after configuration: the mass fraction is 30% hydrogen peroxide, 22% ammonia water and deionized water are stirred evenly and prepared to contain hydrogen peroxide mass fraction is 1%, the mass fraction of ammoni...

Embodiment 2

[0035] (1) pre-cleaning: the use of mass fraction of 32% hydrogen peroxide, 40% sodium hydroxide and deionized water preparation containing hydrogen peroxide mass fraction is 3.5%, and the concentration of sodium hydroxide is 11% pre-cleaning solution, Clean the monocrystalline silicon wafer in the pre-cleaning solution for 200s, and the cleaning temperature is 70°C;

[0036] (2) Texturing: using sodium hydroxide, single crystal texturing additive and deionized water to prepare a texturing solution containing 2% sodium hydroxide in mass fraction and 1.4% additive mass fraction, the pre-cleaned single Texturing of crystalline silicon wafers, the texturing time is 1200s, and the texturing temperature is 83°C;

[0037] (3) cleaning solution after configuration: the mass fraction is 32% hydrogen peroxide, 25% ammoniacal liquor and deionized water are stirred evenly and be prepared to contain hydrogen peroxide mass fraction is 3%, and the mass fraction of ammoniacal liquor is 1% p...

Embodiment 3

[0042] (1) pre-cleaning: the use of mass fraction of 31% hydrogen peroxide, 40% sodium hydroxide and deionized water preparation containing hydrogen peroxide mass fraction is 2%, sodium hydroxide concentration is 8% pre-cleaning solution, Clean the monocrystalline silicon wafer in the pre-cleaning solution for 180s, and the cleaning temperature is 65°C;

[0043] (2) Texturing: Use sodium hydroxide, single crystal texturing additive and deionized water to prepare the mass fraction containing sodium hydroxide as 1.8%, and the mass fraction of additive as a texturing solution of 1.0%, the single crystal after pre-cleaning Texturing of crystalline silicon wafers, the texturing time is 1000s, and the texturing temperature is 80°C;

[0044] (3) cleaning solution after configuration: the mass fraction is 31% hydrogen peroxide, 23% ammoniacal liquor and deionized water are stirred evenly and be prepared to contain hydrogen peroxide mass fraction is 2%, and the mass fraction of ammoniaca...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Reflectivityaaaaaaaaaa
Quality scoreaaaaaaaaaa
Reflectivityaaaaaaaaaa
Login to View More

Abstract

The invention relates to the technical field of solar cells, in particular to a post-cleaning technology applied to texture surface making for the solar cell. The post-cleaning technology comprises the following steps: firstly, rinsing a monocrystalline silicon wafer subjected to pre-cleaning and texture surface making with pure water and cleaning in a post-cleaning solution; secondly, carrying out pure water rinsing and then acid pickling, washing and drying; thirdly, carrying out phosphorus diffusion, etching, PECVD and silk-screen printing to obtain a finished product of a monocrystalline silicon solar cell. According to the post-cleaning technology applied to the texture surface making for the solar cell, disclosed by the invention, organic matters in an additive are oxidized, and organic matters adsorbed to the surface of the silicon wafer are removed, so that the surface of the silicon wafer can be cleaned in the subsequent acid pickling process and the problems of poor appearance and the like are solved; after being cleaned with hydrofluoric acid, the wafer surface is transformed from OH passivation to H passivation so as to realize the aim of surface hydrophobicity; the silicon wafer is dehydrated more thoroughly, and the problem of excessively-long drying time is solved; and a textured structure is optimized, the emissivity is reduced, short-circuit current is improved, the surface recombination center is reduced and open circuit voltage is improved.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a post-cleaning process applied to the texturing of solar cells. Background technique [0002] In the manufacturing process of solar cells, the texturing process is an extremely important link. The specific technological process of the texturing process is as follows: ① Pre-cleaning: the purpose is to remove the mechanically damaged layer on the surface of the original silicon wafer and the impurities adsorbed on the surface of the original silicon wafer, and pre-treat the surface of the silicon wafer to make the texture of the textured surface uniform. sex. ② Texturing: Due to the anisotropic corrosion characteristics of low-concentration alkali on the surface of silicon wafers, the pyramid structure formed by corroding (111) crystal planes on silicon (100) crystal planes with low-concentration alkalis increases the size of the structure. The specific surface area of ​​the...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/02H01L31/0236H01L31/18
CPCH01L21/02068H01L31/02366H01L31/1804Y02E10/547Y02P70/50
Inventor 李浩薛建峰宋飞飞张向斌董方
Owner HENGDIAN GRP DMEGC MAGNETICS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products