Post-cleaning technology applied to texture surface making for solar cell
A solar cell and post-cleaning technology, which is applied in the field of solar cells, can solve the problems of reducing reflectivity and poor improvement effect, and achieve the effect of solving the problem of excessive drying time and thorough dehydration of silicon wafers
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Embodiment 1
[0028] (1) pre-cleaning: the use of mass fraction of 30% hydrogen peroxide, 40% sodium hydroxide and deionized water to prepare a mass fraction containing hydrogen peroxide is 1.5%, and the concentration of sodium hydroxide is a pre-cleaning solution of 6%. Clean the single crystal silicon wafer in the pre-cleaning solution for 140s, and the cleaning temperature is 60°C;
[0029] (2) Texturing: use sodium hydroxide, single crystal texturing additive and deionized water to prepare the mass fraction containing sodium hydroxide as 1.3%, and the mass fraction of additive is 0.7% texturing solution, the single crystal after pre-cleaning Texturing of crystalline silicon wafers, the texturing time is 800s, and the texturing temperature is 77°C;
[0030] (3) Cleaning solution after configuration: the mass fraction is 30% hydrogen peroxide, 22% ammonia water and deionized water are stirred evenly and prepared to contain hydrogen peroxide mass fraction is 1%, the mass fraction of ammoni...
Embodiment 2
[0035] (1) pre-cleaning: the use of mass fraction of 32% hydrogen peroxide, 40% sodium hydroxide and deionized water preparation containing hydrogen peroxide mass fraction is 3.5%, and the concentration of sodium hydroxide is 11% pre-cleaning solution, Clean the monocrystalline silicon wafer in the pre-cleaning solution for 200s, and the cleaning temperature is 70°C;
[0036] (2) Texturing: using sodium hydroxide, single crystal texturing additive and deionized water to prepare a texturing solution containing 2% sodium hydroxide in mass fraction and 1.4% additive mass fraction, the pre-cleaned single Texturing of crystalline silicon wafers, the texturing time is 1200s, and the texturing temperature is 83°C;
[0037] (3) cleaning solution after configuration: the mass fraction is 32% hydrogen peroxide, 25% ammoniacal liquor and deionized water are stirred evenly and be prepared to contain hydrogen peroxide mass fraction is 3%, and the mass fraction of ammoniacal liquor is 1% p...
Embodiment 3
[0042] (1) pre-cleaning: the use of mass fraction of 31% hydrogen peroxide, 40% sodium hydroxide and deionized water preparation containing hydrogen peroxide mass fraction is 2%, sodium hydroxide concentration is 8% pre-cleaning solution, Clean the monocrystalline silicon wafer in the pre-cleaning solution for 180s, and the cleaning temperature is 65°C;
[0043] (2) Texturing: Use sodium hydroxide, single crystal texturing additive and deionized water to prepare the mass fraction containing sodium hydroxide as 1.8%, and the mass fraction of additive as a texturing solution of 1.0%, the single crystal after pre-cleaning Texturing of crystalline silicon wafers, the texturing time is 1000s, and the texturing temperature is 80°C;
[0044] (3) cleaning solution after configuration: the mass fraction is 31% hydrogen peroxide, 23% ammoniacal liquor and deionized water are stirred evenly and be prepared to contain hydrogen peroxide mass fraction is 2%, and the mass fraction of ammoniaca...
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