Preparation method for copper-doped multilayer graphene

Abstract

The invention relates to a preparation method for copper-doped multilayer graphene, and relates to graphene. According to the preparation method for copper-doped multilayer graphene, through doping ofheterogeneous copper atoms, the structure and the energy stage of the multilayer graphene are effectively regulated, and the photoelectric property of the multilayer graphene is improved. According to the preparation method, a graphite target material and a copper target material are used as raw materials, direct current radio frequency joint sputtering of magnetron sputtering is adopted, a copper element is led into a carbon substrate, and the structure and the energy stage of the multilayer graphene are effectively improved. According to the preparation method, low-cost easily-obtained andnontoxic graphite target material and copper target material are used as the raw materials, the copper element is led into the carbon substrate, the structure and the energy stage of the multilayer graphene are effectively improved, and the electron transition mode is more diverse; and the photoelectric property of the multilayer graphene is effectively changed, and the multilayer graphene can beused for detectors, light emitting diodes, solar batteries, supercapacitors, lithium ion batteries, fluorescent materials and other fields.

Description

technical field [0001] The invention relates to graphene, especially a preparation of copper-doped multilayer graphene that effectively modulates the structure and energy level of multilayer graphene by doping heterogeneous copper atoms, thereby improving the photoelectric properties of multilayer graphene method. Background technique [0002] In recent years, with the continuous advancement of science and technology, countries around the world have continuously improved the performance requirements of detectors, and are increasingly inclined to miniaturization and high-performance devices. This puts forward high requirements on the flatness and uniformity of the carbon film. It is difficult for single-layer graphene to meet this requirement in industry. Many researchers turn to the research of multi-layer graphene, which is not only smooth and uniform. Very good, and retains many properties of graphene. Magnetron sputtering is a very good method for preparing thin films. ...

AI Technical Summary

Problems solved by technology

[0005] What the present invention is to solve is the problem that the existing doped graphene is expensive and unfavorable for large-scale production. It provides a method of effectively modulating the structure and energy level of multilayer graphene through the doping of heterogeneous copper atoms, thereby Preparation method of copper-doped multilayer graphene for improving photoelectric properties of multilayer graphene

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