The invention relates to a preparation method for copper-doped multilayer graphene, and relates to graphene. According to the preparation method for copper-doped multilayer graphene, through doping ofheterogeneous copper atoms, the structure and the energy stage of the multilayer graphene are effectively regulated, and the photoelectric property of the multilayer graphene is improved. According to the preparation method, a graphite target material and a copper target material are used as raw materials, direct current radio frequency joint sputtering of magnetron sputtering is adopted, a copper element is led into a carbon substrate, and the structure and the energy stage of the multilayer graphene are effectively improved. According to the preparation method, low-cost easily-obtained andnontoxic graphite target material and copper target material are used as the raw materials, the copper element is led into the carbon substrate, the structure and the energy stage of the multilayer graphene are effectively improved, and the electron transition mode is more diverse; and the photoelectric property of the multilayer graphene is effectively changed, and the multilayer graphene can beused for detectors, light emitting diodes, solar batteries, supercapacitors, lithium ion batteries, fluorescent materials and other fields.