Doped graphene and method for preparing same

Abstract

The invention discloses a doped graphene and a preparation method thereof. The doped graphene is prepared by adopting a chemical vapor deposition method, which comprises the steps as follows: a substrate with catalyst is put into a reaction kettle without oxygen, with the temperature of the substrate being 500 DEG C to 1200 DEG C; then material with carbon element and doped elements is piped into the reaction kettle, and the doped graphene is obtained; the catalyst is metal or metallic compound. The doped graphene prepared by the invention has good quality, and the preparation method is simple and feasible and can be conveniently operated and used for large-scale production.

Description

technical field

[0001] The invention relates to a doped graphene and a preparation method thereof. Background technique

[0002] Since its discovery, graphene has become a rising star in condensed matter physics and materials science, attracting a lot of attention. Graphene is a new carbonaceous material with a two-dimensional honeycomb lattice structure formed by densely packed carbon atoms, with a thickness of one or more atomic layers, which is only one-two-thousandth of hair. It is the basic unit for constructing other dimensional carbonaceous materials (such as zero-dimensional fullerenes, one-dimensional carbon nanotubes, and three-dimensional graphite). According to the number of layers, it can be divided into one or more layers of graphene. Perfect graphene consists only of hexagonal cells (equal hexagons); if pentagonal and heptagonal cells are present, then they constitute graphene defects. Theoretical research on graphene has a history of more than 60 years, an...

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