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Formula and preparation method of N type indium phosphide single crystals

An indium phosphide single crystal technology, applied in the field of indium phosphide single crystal preparation, can solve the problems of high dislocation density and uneven electrical parameters, and achieve low dislocation density, reasonable radial temperature gradient and longitudinal temperature gradient , The effect of small residual stress

Inactive Publication Date: 2018-07-10
深圳市东一晶体技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to solve the shortcomings of high dislocation density and uneven electrical parameters in the prior art, and propose a formula of N-type indium phosphide single crystal and its preparation method

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] A formula of N-type indium phosphide single crystal is characterized in that it comprises the following raw material components: 99.5 grams of InP polycrystalline material, 0.1 grams of elemental tin, 32 grams of diboron trioxide, red phosphorus, and InP seed crystal.

[0022] The InP polycrystalline material is boiled and washed with deionized water several times to remove oxides and residual impurities on the surface.

[0023] The diboron trioxide is high-purity dehydrated boron trioxide, and the water content of the diboron trioxide is on the order of 500ppm.

[0024] The purity of the red phosphorus is 6N; the purity of the elemental tin is 6N.

[0025] A formulation of N-type indium phosphide single crystal, the preparation method of which is as follows:

[0026] S1. Take 99.5 grams of InP polycrystalline material, 0.1 grams of elemental tin, 32 grams of diboron trioxide, red phosphorus, and InP seed crystals into a PBN crucible, and seal the PBN crucible into a q...

Embodiment 2

[0032] A formula of N-type indium phosphide single crystal is characterized in that it comprises the following raw material components: 99.5 grams of InP polycrystalline material, 0.5 grams of elemental tin, 32 grams of diboron trioxide, red phosphorus, and InP seed crystal.

[0033] The InP polycrystalline material is boiled and washed with deionized water several times to remove oxides and residual impurities on the surface.

[0034] The diboron trioxide is high-purity dehydrated boron trioxide, and the water content of the diboron trioxide is on the order of 500ppm.

[0035] The purity of the red phosphorus is 6N; the purity of the elemental tin is 6N.

[0036] A formulation of N-type indium phosphide single crystal, the preparation method of which is as follows:

[0037] S1. Take 99.5 grams of InP polycrystalline material, 0.5 grams of elemental tin, 32 grams of diboron trioxide, red phosphorus, and InP seed crystals into a PBN crucible, and seal the PBN crucible into a q...

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Abstract

The invention relates to the technical field of indium phosphide single crystals, in particular to a formula of N type indium phosphide single crystals. The formula is characterized by being preparedfrom the following raw material ingredients including 99.5g of InP polycrystal materials, 0.1 to 0.5g of elemental tin, 32g of diboron trioxide, red phosphorus and InP seed crystals. Through the strict control on the chemical mixture ratio and the building of a good heat field at the same time, the radial temperature gradient and the longitudinal temperature gradient in flux are more reasonable; the high-quality N type indium phosphide single crystals with small residual stress, low dislocation density and uniform electric parameters can be prepared.

Description

technical field [0001] The invention relates to the technical field of indium phosphide single crystal preparation, in particular to a formula and a preparation method of an N-type indium phosphide single crystal Background technique [0002] Indium phosphide (InP) is one of the important III-V compound semiconductor materials. It is a new generation of electronic functional materials after silicon and gallium arsenide. Compared with gallium arsenide (GaAs), its superiority mainly lies in its high Therefore, InP wafers are usually used in the manufacture of new microelectronics and optoelectronic components. [0003] InP single crystal materials are mainly divided into N-type InP, P-type InP and semi-insulating InP single crystals according to their electrical properties. Lasers and detectors have been used in optical fiber communication systems, and high-speed, high-frequency, broadband, low-noise microwave, and millimeter-wave electronic devices can be fabricated on semi-...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/40C30B11/02
CPCC30B11/02C30B29/40
Inventor 文松葛如松
Owner 深圳市东一晶体技术有限公司