The invention relates to a manufacture technology of
sapphire crystals, in particular to a growing method of large-size flaky
sapphire crystals. A
crystal growing process of the method is carried out in a single-
crystal growing furnace internally provided with a
crucible and a guide mould, wherein the
crystal growing process sequentially comprises the following steps of:
sapphire raw material heating, seeding, shouldering, constant-
diameter lifting and cooling. The single-crystal growing furnace is internally provided with a protective gas inlet and outlet
system capable of introducing and exhausting protective gas and a
pressure control system capable of controlling the pressure in the furnace, wherein the protective gas is introduced into the furnace in the steps of sapphire
raw material heating, seeding, shouldering and constant-
diameter lifting and is formed into flowing gas in the furnace through the protective gas inlet and outlet
system, and the gas
inlet flow of the protective gas is 0.1-50slpm; and meanwhile, the pressure in the furnace is controlled to be 100pa-90kpa through the
pressure control system. The method can be directly used for growing the flaky sapphire crystals with a larger size and has simple manufacture procedure, high material utilization ratio and low manufacture cost.