Production method of low-surface-reflectivity diamond wire-cut polycrystalline silicon wafer texture

A technology of diamond wire cutting and polycrystalline silicon wafers, which is applied in the field of solar energy applications, can solve the problems of mechanical damage on the surface of silicon wafers, high reflectivity, expensive equipment, etc., and achieve the effects of industrial production, simple waste liquid treatment, and long lifetime of few carriers

Inactive Publication Date: 2018-07-13
ZHEJIANG UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, the texturing of diamond wire polysilicon wafers is a big problem
Due to the shallow damage layer cut by diamond wire polysilicon wafers, the difference between the line mark area and the non-line mark area is large, and the reflection and line marks on the surface of the silicon wafer after conventional acid texturing are serious, the cashmere rate is low, and the reflectivity is high, so After being made into a battery sheet, the efficiency is low, and the appearance cannot pass
While other methods such as

Method used

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  • Production method of low-surface-reflectivity diamond wire-cut polycrystalline silicon wafer texture

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Example Embodiment

[0045] Example 1

[0046] (1) Put a diamond wire-cut polysilicon wafer with a thickness of 180±5μm and a size of 30mm×30mm into ethanol for ultrasonic cleaning, and then put it into RCA solution for cleaning at 80°C to remove organic matter and metal ions on the surface of the wafer;

[0047] (2) Put the cleaned silicon wafer into a polytetrafluoroethylene reactor equipped with an etching solution, seal it, and react at 30°C for 30 minutes. The etching solution is HF, Fe(NO) 3 ) 3 Mixed aqueous solution with ethanol, the concentration of HF in the mixed solution is 10mol / L, Fe(NO 3 ) 3 The concentration of ethanol is 0.2mol / L, and the volume percent concentration of ethanol is 1%. After etching, a porous structure is formed on the surface of the silicon wafer;

[0048] (3) The silicon wafer obtained in step 2 is put into an alkaline mixed solution to react. The alkaline mixed solution is composed of ammonia water with a mass percentage concentration of 25%, hydrogen perox...

Example Embodiment

[0050] Example 2

[0051] (1) Put a diamond wire-cut polysilicon wafer with a thickness of 180±5μm and a size of 30mm×30mm into ethanol for ultrasonic cleaning, and then put it into RCA solution for cleaning at 80°C to remove organic matter and metal ions on the surface of the wafer;

[0052] (2) Put the cleaned silicon wafer into a polytetrafluoroethylene reactor equipped with an etching solution, seal it, and react at 30°C for 40 minutes. The etching solution is HF, Fe(NO) 3 ) 3 Mixed aqueous solution with ethanol, the concentration of HF in the mixed solution is 10mol / L, Fe(NO 3 ) 3 The concentration of ethanol is 0.4mol / L, and the volume percent concentration of ethanol is 1%. After etching, a porous structure is formed on the surface of the silicon wafer;

[0053] (3) The silicon wafer obtained in step 2 is put into an alkaline mixed solution to react. The alkaline mixed solution is composed of ammonia water with a mass percentage concentration of 25%, hydrogen perox...

Example Embodiment

[0057] Example 3

[0058] (1) Put a diamond wire-cut polysilicon wafer with a thickness of 180±5μm and a size of 30mm×30mm into ethanol for ultrasonic cleaning, and then put it into RCA solution for cleaning at 80°C to remove organic matter and metal ions on the surface of the wafer;

[0059] (2) Put the cleaned silicon wafer into a polytetrafluoroethylene reactor equipped with an etching solution, seal it, and react at 30°C for 60 minutes. The etching solution is HF, Fe(NO) 3 ) 3 Mixed aqueous solution with ethanol, the concentration of HF in the mixed solution is 5mol / L, Fe(NO 3 ) 3 The concentration of ethanol is 0.2mol / L, and the volume percent concentration of ethanol is 1%. After etching, a porous structure is formed on the surface of the silicon wafer;

[0060] (3) The silicon wafer obtained in step 2 is put into an alkaline mixed solution to react. The alkaline mixed solution is composed of ammonia water with a mass percentage concentration of 25%, hydrogen peroxi...

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Abstract

The invention discloses a production method of low-surface-reflectivity diamond wire-cut polycrystalline silicon wafer texture, comprising the steps of (1) at 20-50 DEG C, soaking a diamond wire-cut polycrystalline silicon wafer that is washed in a first corrosive liquid for corroding for 20-60 min, wherein the first corrosive liquid is a mixed solution of HF, Fe(NO3) and ethanol, HF has a concentration of 1-10 mol/L, Fe(NO3)3 has a concentration of 0.1-1 mol/L, and ethanol has a concentration of volume percent of 1-5%; (2) at 10-30 DEG C, soaking the diamond wire-cut polycrystalline silicon wafer corroded in step (1) in a second corrosive liquid for corroding for 10-30 min, wherein the second corrosive liquid is a mixed solution of ammonia water, hydrogen peroxide and deionized water, thevolume ratio of the liquid ammonia, hydrogen peroxide and deionized water is 1:(1-3):(1-6), the liquid ammonia has a concentration of volume percent of 25%, and the hydrogen peroxide has a concentration of mass percent of 30%; (3) washing, with deionized water, the diamond wire-cut polycrystalline silicon wafer that is corroded, and blow-drying. The low-surface-reflectivity diamond wire-cut polycrystalline silicon wafer texture produced by the production method has low reflectivity and long life.

Description

technical field [0001] The invention relates to the field of solar energy applications, in particular to a method for preparing the suede surface of diamond wire-cut polysilicon solar cells with low surface reflectivity. Background technique [0002] Currently, the most important solar cell material is crystalline silicon, which accounts for more than 90% of the market share. Crystalline silicon is mainly divided into monocrystalline silicon and polycrystalline silicon. Due to the lower cost of polycrystalline silicon, its market share has always surpassed that of monocrystalline silicon to dominate the photovoltaic market. [0003] For polycrystalline silicon solar cells, how to improve cell efficiency while reducing cost is a current research hotspot. Fabricating textured surfaces on silicon wafers can effectively reduce light reflectance and increase light absorption, thereby improving the efficiency of solar cells. [0004] Diamond wire-cut polysilicon wafers have the ...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCH01L31/18Y02P70/50
Inventor 汪雷刘友博蔡辉王淑娴李利凯杨德仁孙葳陈敏刘雪艳沈家万
Owner ZHEJIANG UNIV
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