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Production method of low-surface-reflectivity diamond wire-cut polycrystalline silicon wafer texture

A technology of diamond wire cutting and polycrystalline silicon wafers, which is applied in the field of solar energy applications, can solve the problems of mechanical damage on the surface of silicon wafers, high reflectivity, expensive equipment, etc., and achieve the effects of industrial production, simple waste liquid treatment, and long lifetime of few carriers

Inactive Publication Date: 2018-07-13
ZHEJIANG UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, the texturing of diamond wire polysilicon wafers is a big problem
Due to the shallow damage layer cut by diamond wire polysilicon wafers, the difference between the line mark area and the non-line mark area is large, and the reflection and line marks on the surface of the silicon wafer after conventional acid texturing are serious, the cashmere rate is low, and the reflectivity is high, so After being made into a battery sheet, the efficiency is low, and the appearance cannot pass
While other methods such as plasma dry etching (RIE), laser grooving and other dry etching methods can prepare relatively uniform and low reflectivity suede, but these methods are very expensive and expensive equipment, silicon wafers There will also be relatively serious mechanical damage on the surface; the use of metal-assisted catalytic corrosion to prepare suede has a high cost, and at the same time, the treatment of waste liquid containing precious metals is also a problem that needs attention, and industrial production is relatively difficult

Method used

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  • Production method of low-surface-reflectivity diamond wire-cut polycrystalline silicon wafer texture
  • Production method of low-surface-reflectivity diamond wire-cut polycrystalline silicon wafer texture

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] (1) Put a diamond wire-cut polycrystalline silicon wafer with a thickness of 180±5 μm and a size of 30mm×30mm into ethanol for ultrasonic cleaning, and then put it into an RCA solution for cleaning at 80°C to remove organic matter and metal ions on the surface of the silicon wafer;

[0047] (2) Put the cleaned silicon wafer into a polytetrafluoroethylene reaction kettle filled with corrosive liquid, seal it, and react for 30 minutes at 30°C. The corrosive liquid is HF, Fe(NO 3 ) 3 and ethanol mixed aqueous solution, the concentration of HF in the mixed solution is 10mol / L, Fe(NO 3 ) 3 The concentration of ethanol is 0.2mol / L, and the volume percent concentration of ethanol is 1%. A porous structure is formed on the surface of the silicon wafer after etching;

[0048] (3) Put the silicon chip obtained in step 2 into an alkaline mixed solution for reaction. The alkaline mixed solution is formed by mixing ammonia water with a concentration of 25% by mass, hydrogen pero...

Embodiment 2

[0051] (1) Put a diamond wire-cut polycrystalline silicon wafer with a thickness of 180±5 μm and a size of 30mm×30mm into ethanol for ultrasonic cleaning, and then put it into an RCA solution for cleaning at 80°C to remove organic matter and metal ions on the surface of the silicon wafer;

[0052] (2) Put the cleaned silicon wafer into a polytetrafluoroethylene reactor filled with corrosive liquid, seal it, and react for 40 minutes at 30°C. The corrosive liquid is HF, Fe(NO 3 ) 3 and ethanol mixed aqueous solution, the concentration of HF in the mixed solution is 10mol / L, Fe(NO 3 ) 3 The concentration of ethanol is 0.4mol / L, and the volume percent concentration of ethanol is 1%. A porous structure is formed on the surface of the silicon wafer after etching;

[0053] (3) Put the silicon chip obtained in step 2 into an alkaline mixed solution for reaction. The alkaline mixed solution is formed by mixing ammonia water with a concentration of 25% by mass, hydrogen peroxide wit...

Embodiment 3

[0058] (1) Put a diamond wire-cut polycrystalline silicon wafer with a thickness of 180±5 μm and a size of 30mm×30mm into ethanol for ultrasonic cleaning, and then put it into an RCA solution for cleaning at 80°C to remove organic matter and metal ions on the surface of the silicon wafer;

[0059] (2) Put the cleaned silicon wafer into a polytetrafluoroethylene reaction kettle filled with corrosive liquid, seal it, and react at 30°C for 60 minutes. The corrosive liquid is HF, Fe(NO 3 ) 3 and ethanol mixed aqueous solution, the concentration of HF in the mixed solution is 5mol / L, Fe(NO 3 ) 3 The concentration of ethanol is 0.2mol / L, and the volume percent concentration of ethanol is 1%. A porous structure is formed on the surface of the silicon wafer after etching;

[0060] (3) Put the silicon chip obtained in step 2 into an alkaline mixed solution for reaction. The alkaline mixed solution is formed by mixing ammonia water with a concentration of 25% by mass, hydrogen perox...

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Abstract

The invention discloses a production method of low-surface-reflectivity diamond wire-cut polycrystalline silicon wafer texture, comprising the steps of (1) at 20-50 DEG C, soaking a diamond wire-cut polycrystalline silicon wafer that is washed in a first corrosive liquid for corroding for 20-60 min, wherein the first corrosive liquid is a mixed solution of HF, Fe(NO3) and ethanol, HF has a concentration of 1-10 mol / L, Fe(NO3)3 has a concentration of 0.1-1 mol / L, and ethanol has a concentration of volume percent of 1-5%; (2) at 10-30 DEG C, soaking the diamond wire-cut polycrystalline silicon wafer corroded in step (1) in a second corrosive liquid for corroding for 10-30 min, wherein the second corrosive liquid is a mixed solution of ammonia water, hydrogen peroxide and deionized water, thevolume ratio of the liquid ammonia, hydrogen peroxide and deionized water is 1:(1-3):(1-6), the liquid ammonia has a concentration of volume percent of 25%, and the hydrogen peroxide has a concentration of mass percent of 30%; (3) washing, with deionized water, the diamond wire-cut polycrystalline silicon wafer that is corroded, and blow-drying. The low-surface-reflectivity diamond wire-cut polycrystalline silicon wafer texture produced by the production method has low reflectivity and long life.

Description

technical field [0001] The invention relates to the field of solar energy applications, in particular to a method for preparing the suede surface of diamond wire-cut polysilicon solar cells with low surface reflectivity. Background technique [0002] Currently, the most important solar cell material is crystalline silicon, which accounts for more than 90% of the market share. Crystalline silicon is mainly divided into monocrystalline silicon and polycrystalline silicon. Due to the lower cost of polycrystalline silicon, its market share has always surpassed that of monocrystalline silicon to dominate the photovoltaic market. [0003] For polycrystalline silicon solar cells, how to improve cell efficiency while reducing cost is a current research hotspot. Fabricating textured surfaces on silicon wafers can effectively reduce light reflectance and increase light absorption, thereby improving the efficiency of solar cells. [0004] Diamond wire-cut polysilicon wafers have the ...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCH01L31/18Y02P70/50
Inventor 汪雷刘友博蔡辉王淑娴李利凯杨德仁孙葳陈敏刘雪艳沈家万
Owner ZHEJIANG UNIV
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