Preparation method of high-sensitivity rapid analysis surface enhanced Raman scattering substrate
A surface-enhanced Raman, rapid analysis technology, applied in Raman scattering, material analysis, material excitation analysis, etc., can solve problems such as restricting the application of Raman detection, long detection time, inability to detect in real time, etc. High sensitivity, high sensitivity effect
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Embodiment 1
[0034] A method for preparing a surface-enhanced Raman scattering substrate with high sensitivity and fast analysis, comprising the following steps:
[0035] S1 prepares a mixed solution of 3M hydrofluoric acid, 0.06M silver nitrate and 0.01M CTAB;
[0036] S2 dripping the mixed solution prepared in step S1 on the surface of the silicon wafer;
[0037] S3 was reacted for 5 minutes, the silicon wafer was rinsed and dried with nitrogen gas.
[0038] Soak the high-sensitivity surface-enhanced Raman scattering substrate prepared according to the above steps in the rhodamine 6G to be detected for real-time detection. The laser wavelength used is 532nm, the power is 0.14mw, the integration time is 0.1s, and the accumulation times are 10 Second-rate.
[0039] The results show that the SEM images of the prepared surface-enhanced Raman scattering substrate are as follows: figure 1 As shown, detect rhodamine 6G (5×10 -14 The Raman spectrum of M) is as follows figure 2 As shown, in...
Embodiment 2
[0041] A method for preparing a surface-enhanced Raman scattering substrate with high sensitivity and fast analysis, comprising the following steps:
[0042] S1. prepare 3M hydrofluoric acid, the mixed solution of 0.06M silver nitrate and 0.005M CTAB;
[0043] S2. Adding the mixed solution prepared in step S1 dropwise on the surface of the silicon wafer;
[0044] S3. After reacting for 5 minutes, the silicon wafer was rinsed and dried with nitrogen gas.
[0045] The highly sensitive surface-enhanced Raman scattering substrate prepared according to the above steps was soaked in rhodamine 6G (5×10 -10 In M), real-time detection is carried out, the laser wavelength used is 532nm, the power is 0.14mw, the integration time is 0.1s, and the number of accumulations is 10 times to obtain a Raman spectrogram, which has a strong Raman signal.
Embodiment 3
[0047] A method for preparing a surface-enhanced Raman scattering substrate with high sensitivity and fast analysis, comprising the following steps:
[0048] S1. Prepare 3M hydrofluoric acid, 0.06M silver nitrate and 5×10 -5 Mixed solution of M CTAB;
[0049] S2. Adding the mixed solution prepared in step S1 dropwise on the surface of the silicon wafer;
[0050] S3. After reacting for 5 minutes, the silicon wafer was rinsed and dried with nitrogen gas.
[0051] The highly sensitive surface-enhanced Raman scattering substrate prepared according to the above steps was soaked in rhodamine 6G (5×10 -7In M), real-time detection is carried out, the laser wavelength used is 532nm, the power is 0.14mw, the integration time is 0.1s, and the number of accumulations is 10 times to obtain a Raman spectrogram, which has a strong Raman signal.
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