Packaging structure for high-power density plastic package type IPM (Intelligent Power Module) and processing technology thereof

Abstract

The invention relates to a packaging structure for a high-power density plastic package type IPM (Intelligent Power Module) and a processing technology thereof. The packaging structure comprises a direct bonded copper substrate with patterned growth of graphene on an upper surface, an MOSFET (Metal Oxide Semiconductor Field Effect Transistor) chip, a fast recovery diode chip, a driver chip, a printed circuit board, a solder layer, a graphene filling enhanced heat-conducting silver colloid, a bonding wire, a lead frame, a plastic package shell and a graphene filling enhanced package resin. A graphene film is subjected to patterned growth on the upper surface of the direct bonded copper substrate by adopting a chemical vapor deposition method, local hot heat of the high-power density plasticpackage type IPM rapidly transversely spreads by achieving excellent in-plane heat conduction performance, and the highest temperature of the module is reduced by virtue of outward conduction of thedirect bonded copper substrate. Besides, with the adoption of the graphene filling enhanced heat-conducting glue and the package resin, the heat conduction performance of the traditional packaging material is improved, and the reliability of the module is effectively improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a packaging structure and processing technology of a high-power-density plastic-encapsulated IPM module. Background technique [0002] Intelligent Power Module (IPM) is a power drive product that combines power electronics and integrated circuit technology. It combines power semiconductor chips with control circuits, drive circuits, overvoltage, overcurrent, overheating and undervoltage protection circuits and self-diagnosis The circuit is combined and sealed in an intelligent power semiconductor module in the same insulating shell. [0003] The packaging structure of the smart power module is composed of a variety of materials with different thermal expansion coefficients. When the smart power module is working, the high temperature may not only cause the overheating failure of the chip, but also cause mechanical failure due to the thermal mismatch between the...

AI Technical Summary

Problems solved by technology

At high temperature, the thermal stress at the interlayer interface and the thermal stress concentration at the end often cause the substrate, chip fr

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