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57results about How to "Meeting Reliability Needs" patented technology

Minitype intelligent bidirectional self-adaptation grid-connected photovoltaic power generation system and control method thereof

The invention discloses a minitype intelligent bidirectional self-adaptation grid-connected photovoltaic power generation system, which comprises a photovoltaic battery board matrix and a confluence box, wherein the output end of the output end of the confluence box is connected with a storage battery controller, an inversion/rectification integrated converter and a direct-current load control switch; the storage battery controller and the direct-current load control switch are connected with a storage battery set and a local direct-current load; the output end of a converter is connected with an alternating-current load control switch and an grid-connected controller; the output end of the alternating-current load control switch is connected with a local alternating-current load; each output end is connected with a conversion module; a voltage and current sampling conversion module is connected with a signal modulation circuit; the output end of a signal modulation circuit is connected with a DSP (digital signal processor); and each control end is connected with a PWM (pulse width modulation) interface. A control method of the minitype intelligent bidirectional self-adaptation grid-connected photovoltaic power generation system comprises parameter preparation control, power generation and power supply control. The system and the method have the advantages of good reliability, convenience in installation, operation and maintenance, high stability, strong adaptivity and high solar energy utilization ratio.
Owner:JINZHOU ELECTRIC POWER SUPPLY COMPANY OF STATE GRID LIAONING ELECTRIC POWER SUPPLY +3

Multi-layer aluminum nitride substrate for highly integrated module level packaging, and manufacturing method thereof

InactiveCN109545771AReduce volumeSolve the heat dissipation problem of miniaturized and highly integrated module-level packagingSemiconductor/solid-state device detailsSolid-state devicesGreen tapeThermal expansion
The invention relates to a multi-layer aluminum nitride substrate for highly integrated module level packaging, and a manufacturing method thereof. The structure of the substrate comprises upper and lower surface layers, wherein the upper and lower surface layers are high-precision and high-density metalized welding pads; the side walls of the substrate are fully metalized; and the substrate is internally provided with multi-layer metalized wiring. The upper and lower surface layer metalized welding pads are welded with ball gates of a silicon-based chip; the side walls are fully metalized torealize signal shielding; the multi-layer metalized wiring inside the substrate satisfies complicated circuit signal transmission and interconnection. By utilizing a multi-layer co-firing process, aluminum nitride ceramic is selected as the ceramic base body material, tungsten is used as the metallization material, a green tape binding micro-deformation process adopted, and a tungsten metal circuit layer on the surface layer is plated by adopting chemical nickel-plating and chemical gilding processes. The multi-layer aluminum nitride substrate and the manufacturing method thereof have the advantages that the aluminium nitride substrate and the silicon-based chip are highly matched in coefficients of thermal expansion, and the reliability of ball gate welding packaging of the silicon-basedchip is realized; and the thermal conductivity of the substrate is increased to 170 W/mK, thereby being capable of meeting the high power density packaging and heat dissipation requirements of the highly integrated module.
Owner:NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD

High-reliability IGBT module packaging structure and processing technology

The invention relates to a high-reliability IGBT module packaging structure and a processing technology. The packaging structure comprises a direct copper-clad substrate, an IGBT chip, a quick recovery diode chip, a bottom plate, a soldering flux layer, a bonded lead, a bus, a plastic shell and two-dimensional layered hexagonal boron nitride filled enhanced encapsulated silica gel, wherein two-dimensional layered hexagonal boron nitride is grown on the upper surface of the direct copper-clad substrate in a graphic manner. A two-dimensional layered hexagonal boron nitride thin film is grown onthe upper surface of the direct copper-clad substrate in a graphic manner through a chemical vapor deposition method. By virtue of excellent in-plane thermal conduction performance, partial hot spot heat of the high-power IGBT module can be quickly and transversely dissipated, heat can be conducted outwardly through the direct copper-clad substrate, and the highest temperature of the module is lowered; and meanwhile, by adopting the two-dimensional layered hexagonal boron nitride filled enhanced encapsulated silica gel for encapsulating, the thermal conduction performance of the conventional silica gel is improved, and module reliability is improved effectively.
Owner:HUANGSHAN UNIV

Method for bonding metallization modification on semiconductor unpacked chip

The invention discloses a method for bonding metallization modification on a semiconductor unpacked chip. The method comprises the following steps: putting a deoiled semiconductor unpacked chip surface or a wafer into a mixed solution of sulfuric acid and hydrogen peroxide, performing reaction for 60-90 seconds at 30-40 DEG C, dehydrating, performing primary zinc activation, performing acid corrosion, performing secondary zinc activation, performing deposition on the surface of the unpacked chip or the wafer after secondary zinc activation so as to form an Ni layer; depositing a Pd layer on the Ni layer; depositing an Au layer on the Pd layer. By using a chemical nickel and palladium plating gold leaching process, three layers of metallization layers of nickel, palladium and gold compatible with gold thread bonding are prepared on the surface of the deoiled semiconductor unpacked chip, the adhesion strength and the stability of a membrane layer meet application requirements of packaging processes, various electric parameters of the modified chip are not greatly different from those before modification, and gold thread bonding implemented on the surface of the modified nickel, palladium and gold layer can meet high-temperature environment application and reliability requirements of long-service life application of devices.
Owner:XIAN MICROELECTRONICS TECH INST

Intelligent pressure sensor system for intelligent engine distributed control

The invention discloses an intelligent pressure sensor system for distributed control of an intelligent engine. A pressure analog signal measured by a piezoresistive pressure sensor and a temperatureanalog signal measured based on thermal resistance are shaped and filtered through a signal processing unit; AD acquisition of pressure and temperature analog signals is realized through a ZYNQ-basedintelligent computing unit, and hardware resources are provided for dimensional transformation of the temperature and pressure signals, temperature-based pressure signal correction and fault diagnosisof a pressure sensor; tTP bus communication of the digital signals of the pressure sensors is realized through the communication unit, so that other nodes in the distributed control system can acquire the pressure digital signals from the TTP bus. The intelligent pressure sensor based on ZYNQ design is light in weight and convenient to maintain, hardware adopts a dual-redundancy scheme to meet reliability, communication adopts an FPGA to guarantee communication real-time performance, the transmission bandwidth is high, the fault-tolerant capability is high, the bus utilization rate is high, and the requirements of an aero-engine distributed control system are met.
Owner:NANJING UNIV OF AERONAUTICS & ASTRONAUTICS

Component software reliability analysis method capable of considering limitation of debugging resources based on HFSQM (Hybrid Finite Server Queuing Model)

The invention discloses a component software reliability analysis method capable of considering limitation of debugging resources based on an HFSQM (Hybrid Finite Server Queuing Model), which relates to software reliability analysis methods, and overcomes the defects that infinite debugging resources are impossible in practical application and the newly detected failures have to wait in a queue when all the debugging staffs are busy. The method is realized by the following three steps of: resource allocation, failure detection and failure recovery. The resource allocation step is to allocate appropriate resources for the failures waiting for the debugging resources in the HFSQM; the failure detection process is used for executing an integration test on the entire application based on an operating profile of the component software application; and the failure recovery process is used for recovering the failures occupying the debugging resources in the HFSQM. Thus, a basis for software release and rational configuration of test resources is provided, the software can be punctually released on schedule, user demands on the reliability can be satisfied, and the total cost of the software is lowered. So, an HFSQM-based simulation method has important directive significance for component software tests and further for software marketing decisions.
Owner:HARBIN INST OF TECH

Hybrid automatic repeat request response method and device

The invention discloses a hybrid automatic repeat request response method, which is used for delaying the transmission of HARQ-ACK when the HARQ-ACK feedback of a PDSCH (Physical Downlink Shared Channel) configured by SPS is cancelled due to a configuration conflict, and an original PUCCH (Physical Uplink Control Channel) where the cancelled HARQ-ACK is located is located in a basic time unit. The earliest alternative channel is used as a target channel to bear delay HARQ-ACK (hybrid automatic repeat request-acknowledgement); the alternative channel comprises at least one of a first type of alternative channel and a second type of alternative channel; the first type of alternative channel is a channel formed by sequentially taking continuous N1 alternative symbols starting from a first alternative symbol in the basic time unit or a subsequent time unit; the second alternative channel is at least one of the following channels in the basic time unit or the subsequent time unit: a PUCCH (Physical Uplink Control Channel) configured to be used for transmitting HARQ-ACK (Hybrid Automatic Repeat Request Acknowledgement) and CSI (Channel State Information) of SPS (Space Point Scheduling) or a HARQ-ACK of a dynamic scheduling PDSCH (Physical Downlink Shared Channel), and a PUSCH (Physical Uplink Shared Channel) of semi-static scheduling. The invention further discloses equipment applying the method. According to the invention, the problem that the network equipment and the terminal equipment cannot communicate with each other according to the HARQ-ACK information which is transmitted in a delayed manner is solved.
Owner:CHINA ACADEMY OF INFORMATION & COMM

Wireless transmitting power prediction control method for reliability demand constraint of intelligent substation

The invention discloses a wireless transmitting power prediction control method for reliability demand constraint of an intelligent substation, and the method comprises the steps: constructing a wireless signal propagation state space equation with state observation through the analysis of the relation among reliability, a signal-to-noise ratio and transmitting power and the utilization of a lossmodel and a Kalman filter of wireless signal propagation; performing expected signal-to-noise ratio compensation by estimating a confidence interval of signal-to-noise ratio fluctuation in real time;finally, defining a quadratic cost function taking the difference between the transmitting power and the actual signal-to-noise ratio and the expected signal-to-noise ratio as a target, and realizingoptimal control of the transmitting power through a dynamic programming algorithm. According to the invention, the problem of coordination between the transmitting power of the wireless sensor networkand the wireless communication reliability in the transformer substation environment can be solved, so that the transmitting power of the node is reduced as much as possible while the wireless communication reliability is ensured.
Owner:HEFEI UNIV OF TECH

Heterogeneous B5G/RFID intelligent resource distribution system applied to industrial Internet of Things

The invention discloses a heterogeneous B5G / RFID intelligent resource allocation system applied to an industrial Internet of Things. The requirements of the industrial Internet of Things for ultra-reliability, low delay and high data transmission rate are met by utilizing an emerging B5G technology. Meanwhile, in order to solve the problems that communication of B5G industrial Internet of Things equipment in part of dynamic complex industrial scenes is easily interfered and stable power supply does not exist, the invention combines low-frequency RFID wireless energy-carrying communication with B5G wireless communication, and provides a heterogeneous B5G / RFID intelligent resource allocation system for various industrial environments. According to the system, a reinforcement learning algorithm is used for optimization, algorithm iteration is continuously carried out in an industrial Internet of Things environment, frequency spectrum optimal allocation of B5G wireless communication, power optimal control of RFID wireless energy-carrying communication and B5G / RFID communication optimal selection in a dynamic complex industrial environment are achieved respectively, optimal allocation of various resources is completed in real time, and the communication efficiency of the industrial Internet of Things is effectively improved.
Owner:BEIJING UNIV OF TECH

Optimization method and system for distributed prediction power grid

ActiveCN113762650AMeeting Reliability NeedsMeet the needs of low carbonForecastingResourcesPower gridEngineering
The invention discloses an optimization method and system for distributed prediction power grid. The method comprises the following steps: S1, monitoring a power supply parameter provided for a power distribution network load by each distributed power supply in a power distribution network in real time, and calculating the contribution degree of the distributed power supply based on the power supply parameter; and S2, predicting the contribution degree of the distributed power supply at the future moment, and constructing a distribution model for the contribution degree of the distributed power supply in the power distribution network, wherein the distribution model is used for carrying out coordinated distribution on the contribution degree of the distributed power supply in the power distribution network, so that the distributed power supply meets the load power demand of the power distribution network, and meanwhile, the power consumption cost is reduced and the cleaning benefit is improved. The distributed power supplies are dynamically adjusted until the predicted value of the contribution degree obtained by the neural network at the future moment is consistent with the adjustment reference, so that optimal scheduling of all the distributed power supplies in the power distribution network is realized, and the power distribution network meets the low-carbon requirement while meeting the reliability requirement.
Owner:GUANGDONG POWER GRID CO LTD DONGGUAN POWER SUPPLY BUREAU

Protective layer of semiconductor photoelectric chip and production process of semiconductor

PendingCN113594266APrecise Targeted RemovalPhotoelectric performance impactLaser detailsFinal product manufactureDevice materialProtection layer
The invention discloses a protective layer of a semiconductor photoelectric chip and a production process of a semiconductor. The protective layer of the photoelectric chip comprises a first silicon nitride layer, an Al2O3/SiO2 layer and a second silicon nitride layer from bottom to top in sequence, and a sandwich structure is presented. The process for producing the semiconductor device with the protective layer comprises the following steps of processing a chip; cleaning the wafer; depositing a first silicon nitride layer on the surface of the wafer; depositing an Al2O3/SiO2 layer on the first silicon nitride layer; depositing a second silicon nitride layer on the Al2O3/SiO2 layer; and producing the required semiconductor through a photoetching process, a dry etching process and photoresist removal. The protective layer with a sandwich structure fully utilizes the characteristics of different thin film layers to realize long-acting blocking of water vapor, improves the durability of the device, does not affect the electrical performance of the semiconductor device, can adjust the reflection property to light by adjusting the structure and film thickness of the protective layer, and is simple in production process, low in cost, and good in efficiency. Good application prospects are realized.
Owner:苏州鼎芯光电科技有限公司
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