Preparation method and application of quantum dot light emitting diode

A quantum dot light-emitting and diode technology, which is used in the manufacture of semiconductor/solid-state devices, electrical components, and electrical solid-state devices, etc., can solve the problems of low luminous efficiency and luminous brightness, insufficient stability of QLED, and insufficient transportation balance. The effect of suppressing electron leakage, improving device performance, and stabilizing luminous performance

Inactive Publication Date: 2018-07-31
SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
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  • Application Information

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Problems solved by technology

The carrier transport in the existing QLED is not balanced enough, the QLED is not stable enough, the luminous

Method used

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  • Preparation method and application of quantum dot light emitting diode
  • Preparation method and application of quantum dot light emitting diode
  • Preparation method and application of quantum dot light emitting diode

Examples

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preparation example Construction

[0041] The invention provides a method for preparing a quantum dot light-emitting diode, such as figure 1 shown, including:

[0042] S10, providing a substrate, and preparing a first electrode on the surface of the substrate;

[0043] S20. Prepare a luminescent functional layer on the surface of the first electrode, the luminescent functional layer at least including a quantum dot luminescent layer;

[0044] S30, preparing a second electrode on the light-emitting functional layer to obtain an initial quantum dot light-emitting diode;

[0045] S40, annealing the entire initial quantum dot light emitting diode to obtain a quantum dot light emitting diode.

[0046] In the embodiment of the present invention, in S10, the material of the substrate includes one of glass, polyethylene, polypropylene, polystyrene, polylactic acid, polyethylene terephthalate, polyimide and polyurethane or more. The substrate can have a higher laser transmittance, so as to facilitate the smooth prog...

Embodiment 1

[0059] In this example, it is used to prepare a blue QLED device, wherein the quantum dot light-emitting layer includes blue quantum dot material, which is referred to as the blue light quantum dot light-emitting layer herein. Specifically, the structure of the blue QLED device is stacked sequentially from bottom to top: glass substrate, ITO thin film (first electrode), hole injection layer, hole transport layer, blue light quantum dot light emitting layer, electron transport layer and metal Electrode layer (second electrode). Concrete preparation steps include:

[0060] (1) Take the ITO glass substrate, use photolithography technology to make electrode patterns, and then place the substrate in lotion and deionized water for ultrasonic cleaning, ultrasonic cleaning three times, each ultrasonic time is 30min, after the ultrasonic cleaning is completed, Place the substrate in a clean oven to dry for later use.

[0061] (2) Treat the glass substrate with the ITO thin film on th...

Embodiment 2

[0085] This embodiment is used to prepare a green QLED device, wherein the quantum dot light-emitting layer includes a green light quantum dot material, which is referred to as a green light quantum dot light-emitting layer herein. Specifically, the structure of the green QLED device is sequentially stacked from bottom to top: a glass substrate, an ITO thin film (first electrode), a hole injection layer, a hole transport layer, a green quantum dot light-emitting layer, an electron transport layer and Metal electrode layer (second electrode). Concrete preparation steps include:

[0086] (1) Take the ITO glass substrate, use photolithography technology to make electrode patterns, and then place the substrate in lotion and deionized water for ultrasonic cleaning, ultrasonic cleaning twice, each ultrasonic time is 40min, after the ultrasonic cleaning is completed , place the substrate in a clean oven to dry for later use.

[0087] (2) Treat the glass substrate with the ITO thin ...

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Abstract

The invention provides a preparation method of a quantum dot light emitting diode. The method includes the following steps that: a substrate is provided, and a first electrode is prepared on the surface of the substrate; a light emitting functional layer is prepared on the surface of the first electrode, wherein the light emitting functional layer comprises at least a quantum dot light-emitting layer; a second electrode is prepared on the light-emitting functional layer, so that an initial quantum dot light-emitting diode is obtained; and annealing treatment is performed on the initial quantumdot light-emitting diode entirely, so that a quantum dot light-emitting diode is obtained. The preparation method is simple in process and can be used for industrial production. The obtained quantumdot light-emitting diode prepared by using the preparation method has high luminous efficiency and excellent luminescence performance. The invention also provides application of the quantum dot lightemitting diode.

Description

technical field [0001] The invention belongs to the technical field of semiconductor light emitting devices, in particular to a preparation method and application of a quantum dot light emitting diode. Background technique [0002] A quantum dot (Quantum Dot, QD) is usually a nanoparticle composed of II-VI or III-V elements, which can emit fluorescence after being excited, and its luminescence spectrum can be controlled by changing the size of the quantum dot, and Its fluorescence intensity and stability are good, and it is a good electroluminescent material. Quantum dots are widely used in the fields of light-emitting diodes, solar cells, and bioluminescent markers due to their advantages such as low cost, low energy consumption, high raw material usage, and low environmental pollution. Compared with the existing organic light-emitting diode (Organic Light-Emitting Diode, OLED), the quantum dot light-emitting diode (Quantum Dot Light-Emitting Diode, QLED) with quantum dots...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/52H01L51/56
CPCH10K71/40H10K50/115H10K50/822H10K71/00
Inventor 陈树明苏强张恒孙小卫
Owner SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
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