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Variable band gap AlCoCrFeNi high-entropy alloy oxide semiconductor film and preparing method thereof

An oxide semiconductor, high-entropy alloy technology, applied in metal material coating process, ion implantation plating, coating and other directions, can solve problems such as small adjustment range, achieve wide variation range, uniform and dense thin film, and broaden application fields Effect

Active Publication Date: 2018-08-03
DALIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to solve the problem that the existing single metal oxide thin film needs to be adjusted by doping, and the adjustment range is relatively small; prepare a wider bandgap semiconductor material that is easier to adjust and has a wider bandgap coverage

Method used

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  • Variable band gap AlCoCrFeNi high-entropy alloy oxide semiconductor film and preparing method thereof
  • Variable band gap AlCoCrFeNi high-entropy alloy oxide semiconductor film and preparing method thereof

Examples

Experimental program
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Embodiment 1

[0020] Embodiment 1: preparation by magnetron sputtering method (Al 0.66 CoCrFeNi)O 0.70 film

[0021] (1) Preparation of alloy sputtering target, the steps are as follows:

[0022] Preparation of alloy target: According to the atomic percentage of Al:Co:Cr:Fe:Ni 0.57:1:1:1:1, the mass of each metal component is smelted into a target material, and the purity of each metal component is not less than 99.9%;

[0023] (2) Preparation of AlCoCrFeNi high-entropy alloy oxide film with variable band gap, the steps are as follows:

[0024] ① Preparation and cleaning of Si(100) and Al required for film growth 2 o 3 (0001) and finely polished 304 stainless steel substrate: Among them, Si(100) and Al 2 o 3 The (0001) substrate needs to be ultrasonically cleaned by acetone, alcohol and deionized water in sequence, and the cleaning time is 10 minutes each; in addition, the Si(100) substrate needs to be immersed in 5% hydrofluoric acid for 2~ After taking it out for 3 minutes, rinse t...

Embodiment 2

[0028] Embodiment 2: preparation by magnetron sputtering method (Al 0.69 CoCrFeNi)O 0.69 film

[0029] The preparation process is the same as in Example 1, only increasing the ratio of oxygen and high-purity argon to 30%, and the measurement methods of its composition, microstructure and performance are the same as in Example 1. The test results are: the film composition is by atomic percentage: Al: 4.54%, Co: 6.76%, Cr: 6.22%, Fe: 6.48%, Ni: 6.82%, O: 69.18%, and the content of Al and Fe is higher than that of Example 1 The film is slightly elevated. UV-visible-near-infrared spectrophotometer measurement results are as follows figure 2 shown in ( αE ) 2 - E As shown in the relationship curve, the bandgap width of the film is 3.10 eV, the hardness is 20 GPa, and the resistivity is 1.001×10 16 μΩ·cm, it can be seen that a slight change in the composition of the film can significantly change its performance. film on Al 2 o 3 (0001) is transparent on the substrate, ...

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Abstract

The invention discloses a variable band gap AlCoCrFeNi high-entropy alloy oxide semiconductor film and a preparing method thereof, and belongs to the technical field of semiconductor materials. The film has the following general formula: (Al<y>CoCrFeNi)1-xOx, wherein x is equal to 0.3-0.7, y is equal to 0-1.0, and the atomic ratio of Al:Co:Cr:Fe:Ni of a magnetron sputtering target material is y:1:1:1:1. The film is in a nanocrystalline or amorphous state, and integral oxidization is achieved. Through adjustment of x and y, the band gap width can continuously change in the section of 2.20-4.20eV, the hardness can continuously change in the section of 7-20 Gpa, the specific resistance can continuously change in the section of 1 x 10<7>-1 x 10<19> mu omega.cm, and films growing on differentmatrixes show transparency or different colors. The method for film preparing through a magnetron sputtering method is mature, the nanocrystalline or amorphous state structure can be obtained, integral oxidization is achieved, the film is uniform and dense, and the surface is flat. According to the film, flexible selecting and changing of metal elements or changing of oxygen partial pressure is conducted for wide-range adjustment, wide-range adjustment of properties (band gap width, hardness, specific resistance, colors and the like) can be brought, the application field of the film is widened, and the film can be applied to the fields of optics, microelectronic devices, high-hardness abrasion resisting and decoration films and the like.

Description

technical field [0001] The invention relates to an AlCoCrFeNi high-entropy alloy oxide semiconductor film with a variable band gap and a preparation method thereof, belonging to the technical field of semiconductor materials. Background technique [0002] Compared with traditional alloys, high-entropy alloys have the following advantages: ①Each element in high-entropy alloys is the main element, with an atomic percentage of 5% to 35%. Unlike the added elements in traditional alloys, the properties of the alloy are collectively dominated by all elements ;②Due to the high entropy effect produced by the mixing of multiple elements, high entropy alloys tend to form a solid solution with a single structure due to the solid solution of multiple elements, which avoids the shortcomings of traditional alloys that are prone to produce hard and brittle intermetallic phases due to a small amount of added elements ; ③ The structure and properties of high-entropy alloys are highly sensiti...

Claims

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Application Information

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IPC IPC(8): C23C14/08C23C14/35
CPCC23C14/0036C23C14/08C23C14/3414C23C14/35
Inventor 李晓娜王辰玉程肖甜利助民于庆潇
Owner DALIAN UNIV OF TECH