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A kind of preparation method of metallized graphite film layer for battery electrode

A battery electrode and metallization technology, which is applied in the manufacture of circuits, electrical components, semiconductors/solid-state devices, etc., can solve problems such as high resistivity, difficulty in forming hybrid orbital bonding forms, and failure to achieve mass industrial production. High strength, high hardness, strong binding force and good electrical conductivity

Active Publication Date: 2020-04-21
HENAN UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in the process of preparing the electrode of the battery, the sp 2 The bond form of hybrid orbitals is difficult to form, and the prepared resistivity is high, which is much higher than that of the target graphite.
In the existing technology, there are thin films prepared by magnetron sputtering. The square resistance of the thin film is 20~30Ω / □, which cannot meet the technical requirements of mass industrial production.

Method used

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  • A kind of preparation method of metallized graphite film layer for battery electrode
  • A kind of preparation method of metallized graphite film layer for battery electrode

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preparation example Construction

[0024] A method for preparing a metallized graphite film layer for a battery electrode, comprising the following steps:

[0025] Step 1. Use ultrasonic to clean the Si substrate for 5-20 minutes;

[0026] Step 2. Introduce argon and nitrogen, and use Ti and graphite target co-sputtering method to coat the film to obtain a metallized graphite film layer; wherein, the Ti and graphite target co-sputtering coating method is: use FTO conductive glass as Substrate, using graphite and T material as the target material for co-sputtering, using magnetron co-sputtering coating equipment to deposit graphite-like film on FTO glass; wherein, the substrate is heated to 800~1000 ℃, and argon is introduced Gas and nitrogen, and adjust the flow of the two so that the cavity pressure of the magnetron co-sputtering coating equipment is 0.2~0.5 Pa; the flow ratio of argon and nitrogen is 3:1; the total flow of argon and nitrogen is 30~ 40sccm; the current density of the graphite target is 10~15 ...

Embodiment 1

[0029] A method for preparing a metallized graphite film layer for a battery electrode, comprising the following steps:

[0030] Step 1. Use ultrasonic to clean the Si substrate for 5 minutes;

[0031] Step 2, physical vapor deposition coating: pass in argon and nitrogen, and use Ti and graphite target co-sputtering method to coat the film to obtain a metallized graphite film layer; wherein, the Ti and graphite target co-sputtering coating method is: With FTO conductive glass as the substrate, graphite and T material as the target material for co-sputtering, a carbon film is deposited on the FTO glass using magnetron co-sputtering coating equipment; wherein, the substrate is heated to 800°C, and the Argon and nitrogen, and adjust the flow of the two to make the cavity pressure of the magnetron co-sputtering coating equipment 0.5Pa; the flow ratio of argon and nitrogen is 3:1; the total flow of argon and nitrogen is 30sccm; The current density of the target is 10W / cm 2 , the ...

Embodiment 2

[0035] A method for preparing a metallized graphite film layer for a battery electrode, comprising the following steps:

[0036] Step 1. Use ultrasonic to clean the Si substrate for 8 minutes;

[0037] Step 2, physical vapor deposition coating: pass in argon and nitrogen, and use Ti and graphite target co-sputtering method to coat the film to obtain a metallized graphite film layer; wherein, the Ti and graphite target co-sputtering coating method is: Using FTO conductive glass as the substrate, graphite and T material as the target material for co-sputtering, a carbon film is deposited on the FTO glass by using magnetron co-sputtering coating equipment; wherein, the substrate is heated to 850°C, and the Argon and nitrogen, and adjust the flow of the two to make the cavity pressure of the magnetron co-sputtering coating equipment 0.35Pa; the flow ratio of argon and nitrogen is 3:1; the total flow of argon and nitrogen is 40sccm; The current density of the target is 15W / cm 2 ,...

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Abstract

The invention discloses a metallized graphite film layer for a battery electrode and a preparation method thereof; the metallized graphite film layer comprises the following components in percentage:3.5% to 8.0% of Ti, 2.0% to 3.0% of N, less than or equal to 0.05% of impurity and the balance of C. according to the method in the invention, graphite and a Ti target material are subjected to co-sputtering to prepare the metallized graphite film layer; the carbon atoms are mainly bonded via an sp2 hybrid orbit, so that the defect that the diamond-like resistivity is large can be overcome, and the mode that the carbon atoms are bonded via the sp3 hybrid orbit is reduced. The square resistance of the metallized graphite film layer is 100 m omega / square-3 omega / square, and the industrializedproduction requirement is met.

Description

technical field [0001] The invention relates to the field of battery technology, in particular to a method for preparing a metallized graphite film layer for battery electrodes. Background technique [0002] Solar cells are a new type of industry developed in the 1990s, featuring clean, new energy, no pollution, and high technological content. The electrode of the battery is the main component of the battery, which is mainly involved in the collection and transportation of electrons. The electrodes of solar cells are usually composed of conductive glass loaded with platinum catalysts, and the cost of platinum is relatively high. Therefore, people try other methods to replace platinum metal. [0003] Carbon materials have natural excellent characteristics as solar cells. Carbon materials have high catalytic activity, good conductivity, stable performance, and low cost. At the same time, graphite-like films can be used as electrodes for sensors, and are widely used in electro...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0224H01L21/02
CPCH01L21/02697H01L31/022425
Inventor 闫焉服高志廷王广欣杨文玲傅山泓吴丹凤
Owner HENAN UNIV OF SCI & TECH
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