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Preparation of graphene-coated CO by a mpcvd method 3 o 4 powder method

A powder and coating technology, applied in the field of ions and composite materials, can solve the problems of high energy consumption, high reaction temperature, unsuitable melting point, etc., achieve low economic cost, low reaction temperature, improve reaction efficiency and gas utilization rate Effect

Active Publication Date: 2021-02-19
KUNMING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But its disadvantage is that the reaction temperature is high, the energy consumption is large, and it is not suitable for substrates with low melting points.

Method used

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  • Preparation of graphene-coated CO by a mpcvd method <sub>3</sub> o <sub>4</sub> powder method
  • Preparation of graphene-coated CO by a mpcvd method <sub>3</sub> o <sub>4</sub> powder method

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] The MPCVD method prepared graphene-coated Co 3 o 4 The method for powder, the steps include:

[0022] Will Co 3 o 4 Base powder (Co 3 o 4 The base powder is spherical Co 3 o 4 powder) tiled, evacuated to a pressure within 1mTorr, and then Ar, H 2 、CH 4 According to the gas flow ratio of 9:10:5 (Ar flow is 180sccm, H 2 The flow rate is 200sccm, CH 4 The flow rate is 100sccm), and the pressure is kept at 90Torr. The microwave plasma is turned on, and the deposition reaction is carried out at a temperature of 400°C for 60min. After the reaction is completed, the CH 4 Gas, keep feeding non-oxidizing gas (non-oxidizing gas is hydrogen) to cool to room temperature, close non-oxidizing gas, vacuumize to a pressure of 1mTorr, and pass air to normal pressure to obtain graphene-coated Co 3 o 4 Powder.

[0023] The graphene-coated Co prepared in this example 3 o 4 Powder SEM image as shown figure 1 shown, from figure 1 It can be seen that graphene-coated Co 3 o ...

Embodiment 2

[0026] The MPCVD method prepared graphene-coated Co 3 o 4 The method for powder, the steps include:

[0027] Will Co 3 o 4 Base powder (Co 3 o 4 The base powder is spherical Co 3 o 4 powder) tiled, evacuated to a pressure within 1mTorr, and then Ar, H 2 、CH 4 According to the gas flow ratio of 9:10:3 (Ar flow rate is 90sccm, H 2 The flow rate is 100sccm, CH 4 The flow rate is 30sccm), and the pressure is kept at 1Torr, and the microwave plasma is turned on, and the deposition reaction is carried out at a temperature of 400°C for 60min. After the reaction is completed, the CH 4 Gas, keep feeding non-oxidizing gas (non-oxidizing gas is argon) to cool to room temperature, close non-oxidizing gas, vacuumize to a pressure of 1mTorr, and feed air to normal pressure to obtain graphene-coated Co3 o 4 Powder.

[0028] The graphene-coated Co prepared in this example 3 o 4 Powder SEM image as shown figure 2 shown, from figure 2 It can be seen that graphene-coated Co 3 ...

Embodiment 3

[0031] The MPCVD method prepared graphene-coated Co 3 o 4 The method for powder, the steps include:

[0032] Will Co 3 o 4 Base powder (Co 3 o 4 The base powder is spherical Co 3 o 4 powder) tiled, evacuated to a pressure within 1mTorr, and then Ar, H 2 、CH 4 According to the gas flow ratio of 9:10:1 (Ar flow rate is 9sccm, H 2 The flow rate is 10sccm, CH 4 The flow rate is 1sccm), and the pressure is kept at 20Torr, and the microwave plasma is turned on, and the deposition reaction is carried out at a temperature of 300°C for 120min. After the reaction is completed, the CH 4 Gas, keep feeding non-oxidizing gas (non-oxidizing gas is a mixed gas of argon and nitrogen with a volume ratio of 1:1), cool to room temperature, close the non-oxidizing gas, evacuate to a pressure of 1mTorr, and pass air to normal pressure to obtain Graphene-coated Co 3 o 4 Powder.

[0033] The graphene-coated Co prepared in this embodiment 3 o 4 The powder can be used as a supercapacito...

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Abstract

The invention relates to a method to prepare graphene-coated Co3O4 powder via MPCVD (microwave plasma chemical vapor deposition) and belongs to the technical field of microwave plasma and composites.The method includes: spreading out Co3O4 substrate powder; vacuumizing to the pressure of 1 m Torr and below; introducing Ar, H2 and CH4 gases according to the flow ratio of 9:10:(1-5); keeping the pressure of 1-90 Torr, activating microwave plasma, and carrying out deposition reaction at 300-500 DEG C for 30-120 min; after the reaction, cutting off the CH4 gas; keeping the introduction of nonoxidative gas, cooling to room temperature, and interrupting the nonoxidative gas; vacuumizing to the pressure of 1 m Torr; introducing air to obtain normal pressure so as to obtain graphene-coated Co3O4.The Co3O4 powder is used as a coating base in the preparation process; compared with conventional graphene-coated composite powders, the prepared graphene-coated Co3O4 powder has the advantages thatgraphene herein is few-layer flaky graphene, and coating uniformity is good.

Description

technical field [0001] The present invention relates to a kind of MPCVD method to prepare graphene-coated Co 3 o 4 The powder method belongs to the technical field of microwave plasma and composite materials. Background technique [0002] Since Andre Geim and Konstantin Novoselov of the University of Manchester used adhesive tape to mechanically peel highly oriented pyrolytic graphite and successfully obtained single-layer graphene in 2004, graphene, as a new two-dimensional material, has been the focus of the world's cutting-edge science and technology. Graphene has many excellent properties such as high electron mobility, large specific surface area, good light transmission, and high thermal conductivity. In recent years, the composite system formed by combining graphene with functional materials such as metal oxides can be widely used in supercapacitors, sensors and other technical fields by utilizing the interfacial synergy effect formed between composite heterostructu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G51/04C01B32/186H01G11/24H01G11/30H01G11/36H01G11/46
CPCC01B2204/04C01G51/04C01P2004/80C01P2006/40C01B32/186H01G11/24H01G11/30H01G11/36H01G11/46Y02E60/13
Inventor 杨黎段钰郭胜惠冯双龙彭金辉侯明王梁刘花
Owner KUNMING UNIV OF SCI & TECH