A square open and close box type electrode semiconductor detector

Abstract

A square opening and closing type box-type electrode semiconductor detector. First, three-dimensional grooves are laser etched on the front of the semiconductor wafer, and silicon wafer gaps are left between the grooves. After a certain thickness of the oxide protective layer F has been grown on the crystal The thickness of laser etching on the front side of wafer D is d top There is a twill-shaped silicon body B with a certain width between the grooves; wherein, the twill-shaped silicon body B is a small part of the silicon body left after the wafer D is etched; the central columnar electrode C is controlled by a laser Diffusion doping is obtained after penetrating the silicon body; 2. There is no gap in the silicon wafer between the laser-etched three-dimensional grooves on the back side of the silicon wafer; 3. Use polishing technology to make the surrounding of the groove wall smooth: 4. Boron diffusion doping on the groove wall 5. Filling the three-dimensional grooves: 6. Deep laser etching of the central columnar electrode on the front side: 7. Filling the central columnar electrode C with polysilicon or metal; 8. Plating metal layers on all electrodes.

Description

technical field [0001] The patent of the invention belongs to the technical fields of high-energy physics, astrophysics, aerospace, military affairs, medicine, etc., and particularly relates to a square open-close type box-type electrode semiconductor detector. Background technique [0002] Detectors are mainly used in high-energy physics, astrophysics, etc. Silicon detectors have high detection sensitivity, fast response, strong radiation resistance, and are easy to integrate. They have important application values ​​in high-energy particle detection and X-ray detection. . However, the traditional "three-dimensional silicon detector" has many shortcomings. In high-energy physics and astrophysics, the detector works under strong irradiation conditions, which has high requirements for the detector's energy resolution, response speed, etc., and requires a strong Excellent radiation resistance, low leakage current and low full depletion voltage have different requirements for ...

AI Technical Summary

Problems solved by technology

Secondly, the "three-dimensional trench electrode silicon detector" can only be etched on one side

Finally, when this detector is working, the particles can only be incident on one side, which affects the detection efficiency

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