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Method for recovering valuable metals from waste chips of copper indium gallium selenide solar thin film batteries

A solar thin film, copper indium gallium selenide technology, applied in the field of secondary utilization of resources, can solve the problems of high production cost, dangerous operation process, intense reaction process, etc., achieve high-efficiency selective leaching, no operation risk, simple operation effect

Active Publication Date: 2019-09-10
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the leaching rate of metals in this method is not high. Dissolving CIGS waste with hydrochloric acid and hydrogen peroxide is likely to produce toxic gases such as hydrogen chloride and chlorine that pollute the environment. The reaction process is also very intense, and the hydrazine hydrate used for reducing selenium is also highly toxic. More dangerous and prone to environmental pollution
[0007] To sum up, it can be seen that there are problems such as low comprehensive recovery rate, incomplete separation, complicated and dangerous operation, high production cost, and large environmental pollution in the existing copper indium gallium selenium waste recycling method. It is urgent to invent a CIGS that can solve the above problems. Waste Chip Recycling Method

Method used

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  • Method for recovering valuable metals from waste chips of copper indium gallium selenide solar thin film batteries

Examples

Experimental program
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Effect test

Embodiment 1

[0044] Such as figure 1 As shown, the implementation steps of this embodiment include: taking 50g of CIGS waste battery chips to peel off the substrate, using a mixture solution of ammonia and ammonium salt with a certain mass concentration as the leaching agent to carry out ammonia leaching on the peeled valuable metal layer, the leaching agent concentration in NH 3 The total concentration is 200g / L, the solid-liquid ratio before leaching is 1:5g / mL, the leaching temperature is 30°C, and the leaching time is 5h. After the leaching is completed, ammonia leaching solution and ammonia leaching residue are obtained through liquid-solid separation; ammonia leaching solution extraction , Electrolytic copper can be obtained after electrowinning; the ammonia leaching residue uses NaOH solution with a mass concentration of 80% as the leaching agent for alkaline leaching under normal pressure conditions. The solid-to-liquid ratio is 1:10g / mL, and after leaching, the alkali leaching so...

Embodiment 2

[0046] The implementation steps of this embodiment include: taking 100g of CIGS waste battery chips and peeling off the substrate, using a solution containing ammonia at a certain mass concentration as the leaching agent to carry out ammonia leaching on the peeled valuable metal layer, the concentration of the leaching agent is expressed as NH 3 The total value is 350g / L, the solid-liquid ratio before leaching is 1:10g / mL, the leaching temperature is 60°C, and the leaching time is 3h. After the leaching is completed, ammonia leaching liquid and ammonia leaching residue are obtained through liquid-solid separation; ammonia leaching liquid extraction , Electrolytic copper can be obtained after electrowinning; ammonia leaching slag uses KOH solution with a mass concentration of 60% as the leaching agent to perform alkaline leaching under pressure. The solid-to-liquid ratio is 1:5g / mL. After leaching, the alkali leaching solution and alkali leaching residue are obtained through liq...

Embodiment 3

[0048] The implementation steps of this embodiment include: taking 50g of CIGS waste battery chips to peel off the substrate, using a mixture solution of ammonia and ammonium salt with a certain mass concentration as the leaching agent to carry out ammonia leaching on the peeled valuable metal layer, the concentration of the leaching agent is expressed as NH 3 The total concentration is 50g / L, the solid-liquid ratio before leaching is 1:10g / mL, the leaching temperature is 60°C, and the leaching time is 3h. After the leaching is completed, ammonia leaching liquid and ammonia leaching residue are obtained through liquid-solid separation; ammonia leaching liquid extraction , Electrolytic copper can be obtained after electrowinning; the ammonia leaching slag uses NaOH solution with a mass concentration of 50% as the leaching agent to perform alkaline leaching under normal pressure conditions. The liquid ratio is 1:5g / mL, and the alkali leaching liquid and alkali leaching residue ar...

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Abstract

The invention provides a method for recovering valuable metal from copper indium gallium selenium solar film battery waste chips, and belongs to the technical field of secondary utilization of resources. The method performs the substrate stripping on the copper indium gallium selenium (CIGS) solar film battery waste chips; stripped valuable metal layers are dipped in ammonia to obtain ammonia dipping liquid and ammonia dipping slag through liquid-solid separation after dipping; the ammonia dipping liquid is extracted and electrodeposited to obtain electrolytic copper; the ammonia dipping slagis dipped in alkali to obtain alkali dipping liquid and alkali dipping slag through liquid-solid separation after dipping; the alkali dipping slag is dipped in acid to obtain acid dipping liquid and acid dipping slag; the acid dipping slag is returned to dip in the ammonia; SO2 is introduced in the acid dipping liquid for reduction to obtain rough selenium with a purity of higher than 98%; filtrate is obtained after filtration; the filtrate is reduced and purified to obtain high-purity indium; the alkali dipping liquid is decontaminated to obtain slag containing molybdenum and tin and filtrate; the filtrate is electrolyzed to obtain rough gallium; and the rough gallium is purified to obtain high-purity gallium. The method can realize high-efficiency selective leaching of copper, indium, gallium and selenium, and achieves excellent application prospect.

Description

technical field [0001] The invention relates to the technical field of resource secondary utilization, in particular to a method for recovering valuable metals from waste chips of copper indium gallium selenium solar thin film batteries. Background technique [0002] CIGS solar thin-film battery has the characteristics of low cost, convenient installation and wide application range, and its application prospect is very broad. In the process of producing CIGS batteries, a large amount of CIGS waste will be generated, such as CIGS targets that cannot be fully utilized, defective CIGS batteries, etc. In addition to the heavy metal copper, these wastes also contain rare metals such as indium, gallium and selenium. In order to benefit the sustainable utilization of rare metals such as indium, gallium and selenium and heavy metal copper, they need to be separated and recycled separately to facilitate further recycling and ensure the sustainable development of CIGS thin film solar...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C22B7/00C22B15/00C25C1/12C22B58/00C25C1/22C01B19/02
CPCC01B19/02C22B7/007C22B7/008C22B15/0078C22B58/00C25C1/12C25C1/22Y02P10/20
Inventor 马保中王成彦陈永强邵爽邢鹏
Owner UNIV OF SCI & TECH BEIJING
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