Method for reducing TMA (trimethylaluminum) consumption of PECVD (plasma-enhanced chemical vapor deposition) machine
A machine and energy consumption technology, applied in the field of silicon solar cell manufacturing, to achieve the effect of reducing TMA consumption, reducing process pressure, and realizing TMA consumption
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[0026] Use a P-type monocrystalline silicon wafer with a resistivity of 1.1-1.8Ω cm and a size of 156.75mm×156.75mm. After conventional texturing, diffusion, etching, and annealing, aluminum oxide film and aluminum oxide film are sequentially coated on a German Mayer PECVD machine. Silicon nitride film, where the process of the silicon nitride cavity remains unchanged.
[0027] The process belt speed of the Maya PECVD alumina chamber is set at 185-200cm / min, the chamber temperature is set at 300-350°C, and the process pressure is set at 0.11-0.14mbar.
[0028] The Maya PECVD alumina chamber has two gas paths. Set the nitrous oxide flow rate of the first gas path to 600-700 sccm, the TMA flow rate to 0 mg / min, and the argon gas flow rate to 0 sccm. The laughing gas flow rate was set at 700-1000 sccm, the TMA flow rate was set at 200-300 mg / min, and the argon gas flow rate was set at 600-800 sccm.
[0029] At the s...
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