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A lattice-mismatched multi-junction solar cell and its manufacturing method

A solar cell, lattice mismatch technology, applied in circuits, electrical components, photovoltaic power generation and other directions, can solve problems such as lattice mismatch, surface roughness, wafer warpage, etc., to improve the effect of blocking dislocations, reduce Dislocation density, the effect of improving crystal quality

Active Publication Date: 2020-03-10
YANGZHOU CHANGELIGHT
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of this, the present invention provides a lattice-mismatched multi-junction solar cell and its manufacturing method to solve the problem of wafer warpage caused by the insufficient dislocation blocking effect of the metamorphic buffer layer and the poor effect of releasing stress in the prior art. Problems with curvature and rough surfaces

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  • A lattice-mismatched multi-junction solar cell and its manufacturing method
  • A lattice-mismatched multi-junction solar cell and its manufacturing method
  • A lattice-mismatched multi-junction solar cell and its manufacturing method

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Embodiment Construction

[0044] As mentioned in the background art section, in the prior art, the modified buffer layer is formed by the composition gradation method, although the dislocations caused by mismatch can be restricted to the interface of two adjacent buffer layers without extending upward into the active battery. Zone, but the effect of this technology to relieve stress is not the best. The incompletely released stress will continue to release the stress by forming the surface undulation of the epitaxial layer to cause the surface to be rough, and the residual stress in the epitaxial layer will also cause the wafer to warp. Moreover, the number of steps of the composition step change method, the step variables of each layer, and the thickness of the steps need to be finely optimized, resulting in a narrow process window, and process fluctuations in production will cause its effect of blocking dislocations and releasing stress to deteriorate .

[0045] The inventor found that the delta-doped ...

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Abstract

The invention provides a lattice mismatched multi-junction solar cell and a manufacturing method thereof. The lattice mismatched multi-junction solar cell comprises a metamorphic buffer layer, whereinthe metamorphic buffer layer comprises at least two sub-layers, In components in each sub-layer are constant, the In components in the plurality of sub-layers gradually change, a layer of thin deltadoped layer is arranged between two adjacent sub-layers, the growth of the delta doped layer is interrupted due to the disconnection of an III metal source in the growing process, thus the majority ofdislocations are confined to an interface of the adjacent sub-layers in a compositional gradient layer, the layer of thin delta doped layer is inserted at the interface, thus part of dislocation which can extend upwards originally is blocked, further a dislocation blocking effect can be improved in a targeted manner, the dislocation density of an epitaxial layer is reduced, and the crystal quality of the material is improved. The lattice mismatched multi-junction solar cell provided by the invention combines the function of a compositional stepped changing method with the function of the delta doped layer, thereby improving the effect of blocking dislocations.

Description

Technical field [0001] The invention relates to the technical field of solar cell manufacturing, in particular to a multi-junction solar cell with mismatched crystal lattice and a manufacturing method thereof. Background technique [0002] Solar cells can directly convert solar energy into electricity and are the most effective form of clean energy. The III-V compound semiconductor solar cell has the highest conversion efficiency in the current material system, and has the advantages of good high temperature resistance and strong radiation resistance. It is recognized as a new generation of high-performance and long-life space main power source, of which GaInP / InGaAs The triple-junction battery with a / Ge lattice matching structure has been widely used in the aerospace field. [0003] However, the traditional lattice-matched triple junction battery top cell GaInP and medium cell In 0.01 The current density of GaAs is much smaller than that of the bottom cell Ge, and the solar spec...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0725H01L31/0735H01L31/18
CPCH01L31/0725H01L31/0735H01L31/1844Y02E10/544Y02P70/50
Inventor 吴真龙姜伟韩效亚王玉汪洋
Owner YANGZHOU CHANGELIGHT
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