Lanthanide cerium-doped pure antimony pure-antimony nanometer phase-change material and preparation method thereof

Inactive Publication Date: 2018-09-04
JIANGSU UNIV OF TECH
View PDF4 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In order to solve the defect of low phase transition temperature of pure antimony thin films in the prior art, the present invention provides a lanthanide cerium-doped pure antimony nano phase transition material and its preparation method

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Lanthanide cerium-doped pure antimony pure-antimony nanometer phase-change material and preparation method thereof
  • Lanthanide cerium-doped pure antimony pure-antimony nanometer phase-change material and preparation method thereof
  • Lanthanide cerium-doped pure antimony pure-antimony nanometer phase-change material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] A preparation method of lanthanide cerium doped pure antimony nano phase change material, comprising the following steps:

[0031] 1), cleaning SiO2 2 / Si(100) substrate, cleaning the surface and back, removing dust particles, organic and inorganic impurities;

[0032] a) strong ultrasonic cleaning in acetone solution for 3-5 minutes, and rinse with deionized water;

[0033] b) Strong ultrasonic cleaning in ethanol solution for 3-5 minutes, rinse with deionized water, high-purity N 2 Blow dry the surface and back;

[0034] c) Dry the water vapor in an oven at 120°C for about 20 minutes.

[0035] 2) Preparations before preparing thin films by radio frequency sputtering:

[0036] a) Install the Sb sputtering target, place a fan-shaped cerium sheet with a thickness of 2mm, a diameter of 40mm, and a radian of 15 degrees on the surface of the Sb target, and make the center of the circle coincide. The purity of the target material reaches 99.999% (atomic percentage), and...

Embodiment 2

[0044] A preparation method of lanthanide cerium doped pure antimony nano phase change material, comprising the following steps:

[0045] 1), cleaning SiO2 2 / Si(100) substrate, cleaning the surface and back, removing dust particles, organic and inorganic impurities;

[0046] a) strong ultrasonic cleaning in acetone solution for 3-5 minutes, and rinse with deionized water;

[0047] b) Strong ultrasonic cleaning in ethanol solution for 3-5 minutes, rinse with deionized water, high-purity N 2 Blow dry the surface and back;

[0048] c) Dry the water vapor in an oven at 120°C for about 20 minutes.

[0049] 2) Preparations before preparing thin films by radio frequency sputtering:

[0050] a) Install the Sb sputtering target, place two fan-shaped Ce sheets with a thickness of 2mm, a diameter of 40mm, and a radian of 15 degrees on the surface of the Sb target, and make their centers coincide. The purity of the target material reaches 99.999% (atomic percentage), and the backgroun...

Embodiment 3

[0058] A preparation method of lanthanide cerium doped pure antimony nano phase change material, comprising the following steps:

[0059] The preparation steps are:

[0060] 1) Clean the SiO2 / Si(100) substrate, clean the surface and back, remove dust particles, organic and inorganic impurities;

[0061] a) strong ultrasonic cleaning in acetone solution for 3-5 minutes, and rinse with deionized water;

[0062] b) Strong ultrasonic cleaning in ethanol solution for 3-5 minutes, rinse with deionized water, and dry the surface and back with high-purity N2;

[0063] c) Dry the water vapor in an oven at 120°C for about 20 minutes.

[0064] 2) Preparations before preparing thin films by radio frequency sputtering:

[0065] a) Install the Sb sputtering target, place three fan-shaped cerium sheets with a thickness of 2mm, a diameter of 40mm, and a radian of 15 degrees on the surface of the Sb target, and make their centers coincide. The purity of the target material reaches 99.999% ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a lanthanide cerium-doped pure antimony pure-antimony nanometer phase-change material, the component expression of which is CexSby, wherein the x and y are atomic percent, 0<x<=0.10, 0.90<y<=1, and x+y=1.00. The provided phase-change material can realize a reversible phase change process, and difference between high and low resistance before and after phase change is large,so that the material is easy to realize "0" or "1" needing to be distinguished during storage, and is a more ideal phase change storage material; and the preparation process is mature, and easy to realize compatibility with the existing semiconductor technology. The material inherits the advantages of pure antimony phase synthesis fast phase-change speed, and meanwhile, can have higher crystallization temperature and data retention, has higher crystalline-state and amorphous-state resistance, and reduces power consumption of a corresponding phase change random access memory.

Description

technical field [0001] The invention belongs to the technical field of nanometer materials, and in particular relates to a lanthanide cerium-doped antimony nanometer phase-change film material and a preparation method thereof, which are applied in the field of phase-change storage. Background technique [0002] The storage of information plays a pivotal role in the development of human civilization. Because timely and effective information is always the most concerned and one of the most important parts, whether it is in business conduct or warfare in the new era. Information storage is an inevitable part of information collection and transmission. At the same time, with the advancement of human science and technology, exchanges have become more frequent, and the amount of data obtained by human civilization has grown rapidly. Therefore, information storage technology is the pillar technology for the existence and development of modern society, and the development of human...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L45/00C23C14/18C23C14/35B82Y30/00
CPCC23C14/185C23C14/35H10N70/881H10N70/231H10N70/026
Inventor 张剑豪邹华胡益丰朱小芹薛建忠郑龙吴世臣袁丽孙月梅吴卫华眭永兴
Owner JIANGSU UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap